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Thickness dependent thermal conductivity of gallium nitride

Applied physics letters, 2017-01, Vol.110 (3)

2017

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Thermal transport through GaN–SiC interfaces from 300 to 600 K

Applied physics letters, 2015-08, Vol.107 (9)

2015

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Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures

Applied physics letters, 2016-05, Vol.108 (20)

2016

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Plasmonic off-axis unidirectional beaming of quantum-well luminescence

Applied physics letters, 2013-12, Vol.103 (25)

2013

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Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors

Journal of applied physics, 2009-06, Vol.105 (11), p.113103-113103-9

2009

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Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells

Applied physics letters, 2012-06, Vol.100 (24), p.241113

2012

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Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures

Applied physics letters, 2008-03, Vol.92 (10), p.101112-101112-3

2008

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Sub-250 nm light emission and optical gain in AlGaN materials

Journal of applied physics, 2013-01, Vol.113 (1)

2013

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Scattering of electrons at threading dislocations in GaN

Journal of applied physics, 1998-04, Vol.83 (7), p.3656-3659

1998

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Electroabsorption modulators based on bulk GaN films and GaN/AlGaN multiple quantum wells

Journal of applied physics, 2011-04, Vol.109 (8), p.083102-083102-5

2011

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Plasmon enhanced light emission from InGaN quantum wells via coupling to chemically synthesized silver nanoparticles

Applied physics letters, 2009-10, Vol.95 (15), p.151109-151109-3

2009

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Measurement of electric field across individual wurtzite GaN quantum dots using electron holography

Applied physics letters, 2011-09, Vol.99 (10), p.101905-101905-3

2011

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Jacques Isaac Pankove

Physics today, 2017-04, Vol.70 (4), p.64-64

2017

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Intersubband absorption in AlN∕GaN∕AlGaN coupled quantum wells

Applied physics letters, 2007-10, Vol.91 (14)

2007

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Two-dimensional electron gas in monolayer InN quantum wells

Applied physics letters, 2014-11, Vol.105 (21)

2014

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Development of AlGaN-based graded-index-separate-confinement-heterostructure deep UV emitters by molecular beam epitaxy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-05, Vol.31 (3)

2013

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Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells

Applied physics letters, 2009-02, Vol.94 (8), p.081120-081120-3

2009

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Publisher's Note: "AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy" [Appl. Phys. Lett. 98, 081110 (2011)]

Applied physics letters, 2012-01, Vol.100 (2), p.029901-029901-1

2012

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Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures

Journal of applied physics, 2010-11, Vol.108 (10), p.103704-103704-5

2010

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Electrical characterization of GaN/SiC n-p heterojunction diodes

Applied physics letters, 1998-03, Vol.72 (11), p.1371-1373

1998

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Refractive-index nonlinearities of intersubband transitions in GaN/AlN quantum-well waveguides

Journal of applied physics, 2008-10, Vol.104 (8), p.083101-083101-6

2008

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Real-time x-ray studies of gallium nitride nanodot formation by droplet heteroepitaxy

Journal of applied physics, 2007-10, Vol.102 (7)

2007

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Intersubband absorption in Al N ∕ Ga N ∕ Al Ga N coupled quantum wells

Applied physics letters, 2007-10, Vol.91 (14), p.141104-141104-3

2007

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Real-time x-ray studies of gallium adsorption and desorption

Journal of applied physics, 2006-10, Vol.100 (8), p.084307-084307-6

2006

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Real-time x-ray studies of gallium nitride nanodot formationby droplet heteroepitaxy

Journal of applied physics, 2007-10, Vol.102 (7), p.073522-073522-9

2007

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Thickness dependent thermal conductivity of gallium nitride

Thermal transport through GaN–SiC interfaces from 300 to 600 K

Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures

Plasmonic off-axis unidirectional beaming of quantum-well luminescence

Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors

Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells

Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures

Sub-250 nm light emission and optical gain in AlGaN materials

Scattering of electrons at threading dislocations in GaN

Electroabsorption modulators based on bulk GaN films and GaN/AlGaN multiple quantum wells

Plasmon enhanced light emission from InGaN quantum wells via coupling to chemically synthesized silver nanoparticles

Measurement of electric field across individual wurtzite GaN quantum dots using electron holography

Jacques Isaac Pankove

Intersubband absorption in AlN∕GaN∕AlGaN coupled quantum wells

Two-dimensional electron gas in monolayer InN quantum wells

Development of AlGaN-based graded-index-separate-confinement-heterostructure deep UV emitters by molecular beam epitaxy

Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells

Publisher's Note: "AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy" [Appl. Phys. Lett. 98, 081110 (2011)]

Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures

Electrical characterization of GaN/SiC n-p heterojunction diodes

Refractive-index nonlinearities of intersubband transitions in GaN/AlN quantum-well waveguides

Real-time x-ray studies of gallium nitride nanodot formation by droplet heteroepitaxy

Intersubband absorption in Al N ∕ Ga N ∕ Al Ga N coupled quantum wells

Real-time x-ray studies of gallium adsorption and desorption

Real-time x-ray studies of gallium nitride nanodot formationby droplet heteroepitaxy

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