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Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots

Applied physics letters, 2005-11, Vol.87 (21), p.213105-213105-3

2005

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Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)

Applied physics letters, 2004-03, Vol.84 (11), p.1931-1933

2004

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Minority-carrier kinetics in heavily doped GaAs:C studied by transient photoluminescence

Journal of applied physics, 2002-04, Vol.91 (8), p.5072-5078

2002

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Interdot carrier transfer in asymmetric bilayer InAs ∕ GaAs quantum dot structures

Applied physics letters, 2005-02, Vol.86 (6), p.063102-063102-3

2005

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InGaAs/GaAs three-dimensionally-ordered array of quantum dots

Applied physics letters, 2003-08, Vol.83 (5), p.987-989

2003

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Anisotropic photoconductivity of InGaAs quantum dot chains measured by terahertz pulse spectroscopy

Applied physics letters, 2004-10, Vol.85 (17), p.3839-3841

2004

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Investigation of indium distribution in InGaAs ∕ GaAs quantum dot stacks using high-resolution x-ray diffraction and Raman scattering

Journal of applied physics, 2006-01, Vol.99 (2), p.023517-023517-10

2006

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Photoluminescence study of carrier transfer among vertically aligned double-stacked InAs/GaAs quantum dot layers

Applied physics letters, 2002-09, Vol.81 (13), p.2469-2471

2002

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Highly sensitive micro-Hall devices based on Al0.12In0.88Sb∕InSb heterostructures

Journal of applied physics, 2005-07, Vol.98 (1)

2005

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Carrier transfer in self-assembled coupled InAs/GaAs quantum dots

Journal of applied physics, 2000-12, Vol.88 (12), p.7162-7170

2000

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One-dimensional postwetting layer in InGaAs∕GaAs(100) quantum-dot chains

Journal of applied physics, 2006-02, Vol.99 (3)

2006

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Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots

Applied physics letters, 2001-05, Vol.78 (21), p.3214-3216

2001

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Persistence of (In,Ga)As quantum-dot chains under index deviation from GaAs(100)

Applied physics letters, 2004-06, Vol.84 (23), p.4681-4683

2004

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Control on self-organization of InGaAs/GaAs(100) quantum-dot chains

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2005-07, Vol.23 (4), p.1732-1735

2005

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Doped-channel micro-Hall devices: Size and geometry effects

Journal of applied physics, 2005-11, Vol.98 (9), p.094503-094503-5

2005

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Tailoring of high-temperature photoluminescence in InAs∕GaAs bilayer quantum dot structures

Journal of applied physics, 2005-09, Vol.98 (5)

2005

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Strong optical nonlinearity in strain-induced laterally ordered In0.4Ga0.6As quantum wires on GaAs (311)A substrate

Journal of applied physics, 2005-09, Vol.98 (5)

2005

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Hidden resonant excitation of photoluminescence in bilayer arrays of InAs/GaAs quantum dots

Applied physics letters, 2003-09, Vol.83 (9), p.1866-1868

2003

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Generation–recombination noise in doped-channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As quantum well micro-Hall devices

Journal of applied physics, 2003-12, Vol.94 (12), p.7590-7593

2003

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A novel and highly accurate technique for polarized light spectroscopy (the PNP method)

Review of scientific instruments, 1974-03, Vol.45 (3), p.386-390

1974

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Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy

Applied physics letters, 2021-02, Vol.118 (6)

2021

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Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon

Applied physics letters, 2004-03, Vol.84 (11), p.1850-1852

2004

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Femtosecond laser-induced formation of submicrometer spikes on silicon in water

Applied physics letters, 2004-12, Vol.85 (23), p.5694-5696

2004

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Tetraneutron resonance: Theory

AIP Conference Proceedings, 2018, Vol.2038 (1)

2018

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InGaAs quantum wire intermediate band solar cell

Applied physics letters, 2012-07, Vol.101 (4), p.41106

2012

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Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots

Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)

Minority-carrier kinetics in heavily doped GaAs:C studied by transient photoluminescence

Interdot carrier transfer in asymmetric bilayer InAs ∕ GaAs quantum dot structures

InGaAs/GaAs three-dimensionally-ordered array of quantum dots

Anisotropic photoconductivity of InGaAs quantum dot chains measured by terahertz pulse spectroscopy

Investigation of indium distribution in InGaAs ∕ GaAs quantum dot stacks using high-resolution x-ray diffraction and Raman scattering

Photoluminescence study of carrier transfer among vertically aligned double-stacked InAs/GaAs quantum dot layers

Highly sensitive micro-Hall devices based on Al0.12In0.88Sb∕InSb heterostructures

Carrier transfer in self-assembled coupled InAs/GaAs quantum dots

One-dimensional postwetting layer in InGaAs∕GaAs(100) quantum-dot chains

Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots

Persistence of (In,Ga)As quantum-dot chains under index deviation from GaAs(100)

Control on self-organization of InGaAs/GaAs(100) quantum-dot chains

Doped-channel micro-Hall devices: Size and geometry effects

Tailoring of high-temperature photoluminescence in InAs∕GaAs bilayer quantum dot structures

Strong optical nonlinearity in strain-induced laterally ordered In0.4Ga0.6As quantum wires on GaAs (311)A substrate

Hidden resonant excitation of photoluminescence in bilayer arrays of InAs/GaAs quantum dots

Generation–recombination noise in doped-channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As quantum well micro-Hall devices

A novel and highly accurate technique for polarized light spectroscopy (the PNP method)

Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy

Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon

Femtosecond laser-induced formation of submicrometer spikes on silicon in water

Tetraneutron resonance: Theory

InGaAs quantum wire intermediate band solar cell

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