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Recovery of the NBTI-Stressed Ultrathin Gate p-MOSFET: The Role of Deep-Level Hole Traps

IEEE electron device letters, 2006-11, Vol.27 (11), p.914-916

2006

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Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET

IEEE electron device letters, 2005-12, Vol.26 (12), p.906-908

2005

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Insight Into the Suppressed Recovery of NBTI-Stressed Ultrathin Oxynitride Gate pMOSFET

IEEE electron device letters, 2006-09, Vol.27 (9), p.755-758

2006

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Effect of Hole-Trap Distribution on the Power-Law Time Exponent of NBTI

IEEE electron device letters, 2009-07, Vol.30 (7), p.751-753

2009

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Role of Nitrogen on the Gate Length Dependence of NBTI

IEEE electron device letters, 2009-07, Vol.30 (7), p.772-774

2009

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Generation-recombination noise in the near fully depleted SIMOX SOI n-MOSFET - physical characteristics and modeling

IEEE transactions on electron devices, 2003-12, Vol.50 (12), p.2490-2498

2003

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A new insight into the degradation behavior of the LDD N-MOSFET during dynamic hot-carrier stressing

IEEE electron device letters, 2001-11, Vol.22 (11), p.553-555

Ang, D.S.

2001

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Evidence for a composite interface State generation mode in the CHE-stressed deep-submicrometer n-MOSFET

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2246-2248

2004

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Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs

IEEE electron device letters, 2004-06, Vol.25 (6), p.417-419

2004

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A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: device characterization and damage assessment

IEEE transactions on electron devices, 2002-12, Vol.49 (12), p.2254-2262

2002

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Characterization of leakage current in thin gate oxide subjected to 10 keV X-ray irradiation

IEEE transactions on electron devices, 2000-03, Vol.47 (3), p.650-652

2000

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Evolution of oxide charge trapping under bias temperature stressing

Microelectronics and reliability, 2014-04, Vol.54 (4), p.663-681

2014

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On the dynamic NBTI of the HfO 2 and HfSiON P–MOSFET

Microelectronic engineering, 2011, Vol.88 (7), p.1392-1395

2011

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On the dynamic NBTI of the HfO2 and HfSiON P-MOSFET

Microelectronic engineering, 2011-07, Vol.88 (7), p.1392-1395

2011

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Bilayer gate dielectric study by scanning tunneling microscopy

Applied physics letters, 2007-09, Vol.91 (10), p.102905-102905-3

2007

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Non-classical hot-electron mechanism and its implications on the reliability and scalability of the high- κ dielectric N-MOS Flash memory cell

Microelectronic engineering, 2007-09, Vol.84 (9), p.1929-1933

2007

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Breakdowns in high-k gate stacks of nano-scale CMOS devices

Microelectronic engineering, 2005-06, Vol.80, p.353-361

2005

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Study of Dopant Redistribution at the Substrate-Source/Drain p-n Junction of Nanoscale MOSFET During Progressive Breakdown

IEEE transactions on electron devices, 2006-11, Vol.53 (11), p.2786-2791

2006

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Observation of two gate stress voltage dependence of NBTI induced threshold voltage shift of ultra-thin oxynitride gate p-MOSFET

2009 IEEE International Reliability Physics Symposium, 2009, p.1002-1004

2009

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Reassessing NBTI mechanisms by ultrafast charge pumping measurement

2009 IEEE International Integrated Reliability Workshop Final Report, 2009, p.25-29

2009

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Effect of mechanical strain on the NBTI of short-channel p-MOSFETS: Role of impactionization

2009 IEEE International Reliability Physics Symposium, 2009, p.1019-1022

2009

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Optimization of colorectal cancer vaccine candidate protein GA733-Fc expression in a baculovirus insect cell system

Entomological Research, 2015, 45(1), , pp.39-48

2015

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An improved methodology for monitoring NBTI induced threshold voltage shift of scaled p-MOSFETS

2008 IEEE International Reliability Physics Symposium, 2008, p.743-744

2008

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Energy distribution and electrical characteristics of NBTI induced Si/SiON interface states

2008 IEEE International Reliability Physics Symposium, 2008, p.737-738

2008

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The Impact of Nitrogen on the Frequency Dependence of Negative-Bias Temperature Instability

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.688-689

2007

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Recovery of the NBTI-Stressed Ultrathin Gate p-MOSFET: The Role of Deep-Level Hole Traps

Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET

Insight Into the Suppressed Recovery of NBTI-Stressed Ultrathin Oxynitride Gate pMOSFET

Effect of Hole-Trap Distribution on the Power-Law Time Exponent of NBTI

Role of Nitrogen on the Gate Length Dependence of NBTI

Generation-recombination noise in the near fully depleted SIMOX SOI n-MOSFET - physical characteristics and modeling

A new insight into the degradation behavior of the LDD N-MOSFET during dynamic hot-carrier stressing

Evidence for a composite interface State generation mode in the CHE-stressed deep-submicrometer n-MOSFET

Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs

A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: device characterization and damage assessment

Characterization of leakage current in thin gate oxide subjected to 10 keV X-ray irradiation

Evolution of oxide charge trapping under bias temperature stressing

On the dynamic NBTI of the HfO 2 and HfSiON P–MOSFET

On the dynamic NBTI of the HfO2 and HfSiON P-MOSFET

Bilayer gate dielectric study by scanning tunneling microscopy

Non-classical hot-electron mechanism and its implications on the reliability and scalability of the high- κ dielectric N-MOS Flash memory cell

Breakdowns in high-k gate stacks of nano-scale CMOS devices

Study of Dopant Redistribution at the Substrate-Source/Drain p-n Junction of Nanoscale MOSFET During Progressive Breakdown

Observation of two gate stress voltage dependence of NBTI induced threshold voltage shift of ultra-thin oxynitride gate p-MOSFET

Reassessing NBTI mechanisms by ultrafast charge pumping measurement

Effect of mechanical strain on the NBTI of short-channel p-MOSFETS: Role of impactionization

Optimization of colorectal cancer vaccine candidate protein GA733-Fc expression in a baculovirus insect cell system

An improved methodology for monitoring NBTI induced threshold voltage shift of scaled p-MOSFETS

Energy distribution and electrical characteristics of NBTI induced Si/SiON interface states

The Impact of Nitrogen on the Frequency Dependence of Negative-Bias Temperature Instability

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