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SiGe(C) epitaxial technologies—issues and prospectives

Thin solid films, 2002-06, Vol.412 (1), p.44-49

2002

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Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Solid-state electronics, 2014-08, Vol.98, p.93-98

2014

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Superconducting platinum silicide for electron cooling in silicon

Solid-state electronics, 2015-01, Vol.103, p.15-18

2015

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Comparison of electron–phonon and hole–phonon energy loss rates in silicon

Solid-state electronics, 2015-01, Vol.103, p.40-43

2015

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Improved effective mobility extraction in MOSFETs

Solid-state electronics, 2009-12, Vol.53 (12), p.1252-1256

2009

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Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Journal of applied physics, 2004-12, Vol.96 (11), p.6470-6476

2004

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SiGe : heterostructures for CMOS technology

Thin solid films, 2000-05, Vol.367 (1-2), p.250-259

2000

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The determination of strain in Si-Ge superlattices by electron diffraction in a scanning transmission electron microscope

Journal of crystal growth, 1991-05, Vol.111 (1), p.925-930

1991

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SiGe heterostructure CMOS circuits and applications

Solid-state electronics, 1999-08, Vol.43 (8), p.1497-1506

1999

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Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si 0.3Ge 0.7 channel grown by MBE

Applied surface science, 2004, Vol.224 (1), p.265-269

2004

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Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

Applied surface science, 2004-03, Vol.224 (1-4), p.265-269

2004

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Fully pseudomorphic Si/SiGe/Si heterostructures for p-channel field effect devices

Thin solid films, 1997-02, Vol.294 (1), p.160-165

Whall, T.E.

1997

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p-channel SiGe heterostructures for field effect applications

Applied surface science, 1996-08, Vol.102, p.221-229

Whall, T.E.

1996

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Preparation of polycrystalline and monocrystalline Fe3−xTixO4spinels

Journal of crystal growth, 1984-11, Vol.69 (1), p.101-107

1984

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Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system

Physica. B, Condensed matter, 2001-04, Vol.298 (1-4), p.496-500

2001

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Universality at a quantum Hall–Hall insulator transition in a Si/Si0.87Ge0.13 2D hole system

Physica. E, Low-dimensional systems & nanostructures, 2000-02, Vol.6 (1-4), p.297-300

2000

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Low frequency noise measurements of p-channel Si/sub 1-x/Ge/sub x/ MOSFET's

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1484-1486

1999

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Spin precession observation in quantum corrections to resistance of Si 0.7Ge 0.3/Si 0.2Ge 0.8 heterostructure with 2DHG

Physica. E, Low-dimensional systems & nanostructures, 2003, Vol.18 (1), p.145-146

2003

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Study of velocity field characteristics in pseudomorphic Si 0.8Ge 0.2 p-channel metal-oxide-semiconductor field effect transistor

Microelectronic engineering, 2000, Vol.51, p.541-546

2000

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Spin precession observation in quantum corrections to resistance of Si0.7Ge0.3/Si0.2Ge0.8 heterostructure with 2DHG

Physica. E, Low-dimensional systems & nanostructures, 2003-05, Vol.18 (1-3), p.145-146

2003

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Study of velocity field characteristics in pseudomorphic Si0.8Ge0.2 p-channel metal-oxide-semiconductor field effect transistor

Microelectronic engineering, 2000-05, Vol.51-52, p.541-546

2000

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Universality at a quantum Hall – Hall insulator transition in a Si/Si 0.87Ge 0.13 2D hole system

Physica. E, Low-dimensional systems & nanostructures, 2000, Vol.6 (1), p.297-300

2000

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Transconductance, carrier mobility and 1/ f noise in Si/Si 0.64Ge 0.36/Si pMOSFETs

Materials science & engineering. B, Solid-state materials for advanced technology, 2002, Vol.89 (1), p.444-448

2002

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Growth and characterisation of pseudomorphic Si/SiGe/Si heterostructures for P-channel field-effect transistors

Thin solid films, 1997-09, Vol.306 (2), p.338-345

1997

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Two dimensional phonon-drag thermopower in Si 0.87Ge 0.13/Si (001) heterostructure grown by MBE

Microelectronic engineering, 2000, Vol.51, p.527-534

2000

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SiGe(C) epitaxial technologies—issues and prospectives

Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Superconducting platinum silicide for electron cooling in silicon

Comparison of electron–phonon and hole–phonon energy loss rates in silicon

Improved effective mobility extraction in MOSFETs

Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

SiGe : heterostructures for CMOS technology

The determination of strain in Si-Ge superlattices by electron diffraction in a scanning transmission electron microscope

SiGe heterostructure CMOS circuits and applications

Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si 0.3Ge 0.7 channel grown by MBE

Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

Fully pseudomorphic Si/SiGe/Si heterostructures for p-channel field effect devices

p-channel SiGe heterostructures for field effect applications

Preparation of polycrystalline and monocrystalline Fe3−xTixO4spinels

Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system

Universality at a quantum Hall–Hall insulator transition in a Si/Si0.87Ge0.13 2D hole system

Low frequency noise measurements of p-channel Si/sub 1-x/Ge/sub x/ MOSFET's

Spin precession observation in quantum corrections to resistance of Si 0.7Ge 0.3/Si 0.2Ge 0.8 heterostructure with 2DHG

Study of velocity field characteristics in pseudomorphic Si 0.8Ge 0.2 p-channel metal-oxide-semiconductor field effect transistor

Spin precession observation in quantum corrections to resistance of Si0.7Ge0.3/Si0.2Ge0.8 heterostructure with 2DHG

Study of velocity field characteristics in pseudomorphic Si0.8Ge0.2 p-channel metal-oxide-semiconductor field effect transistor

Universality at a quantum Hall – Hall insulator transition in a Si/Si 0.87Ge 0.13 2D hole system

Transconductance, carrier mobility and 1/ f noise in Si/Si 0.64Ge 0.36/Si pMOSFETs

Growth and characterisation of pseudomorphic Si/SiGe/Si heterostructures for P-channel field-effect transistors

Two dimensional phonon-drag thermopower in Si 0.87Ge 0.13/Si (001) heterostructure grown by MBE

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