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37-GHz bandwidth monolithically integrated InP HBT/evanescently coupled photodiode

IEEE photonics technology letters, 2006-06, Vol.18 (12), p.1323-1325

2006

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Ultra low background InGaAs epi-layer on InP for PIN applications by production MBE

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.48-51

2004

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InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and I_ON/I_OFF Ratio Near {10}6

IEEE electron device letters, 2012-06, Vol.33 (6), p.782-784

2012

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InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and [Formula Omitted] Ratio Near [Formula Omitted]

IEEE electron device letters, 2012-06, Vol.33 (6), p.782

2012

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Fe implantation in In0.53Ga0.47As/InP

Journal of applied physics, 1989-01, Vol.65 (2), p.481-485

1989

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Al sub(x)Ga sub(1-x)) sub(0.5)In sub(0.5)P /In sub(0.15)Ga sub(0.85)As (x = 0, 0.3, 1.0) Heterostructure doped-channel FETs for microwave power applications

IEEE transactions on electron devices, 2001-12, Vol.48 (12), p.2906-2910

2001

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(Al)x)Ga)1-x)))0.5)In)0.5)P/In)0.15)Ga)0.85)As (x=0, 0. 3, 1. 0) heterostructuredoped-channel FETs for microwave power applications

IEEE transactions on electron devices, 2001-12, Vol.48 (12), p.2906-2910

2001

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(AlxGa1-x)0.5In0.5P/In 0.15Ga0.85As (x=0, 0. 3, 1. 0) heterostructure doped-channel FETs for microwave power applications

IEEE transactions on electron devices, 2001-12, Vol.48 (12), p.2906

2001

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(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/In/sub 0.15/Ga/sub 0.85/As (x=0, 0. 3, 1. 0) heterostructure doped-channel FETs for microwave power applications

IEEE transactions on electron devices, 2001-12, Vol.48 (12), p.2906-2910

2001

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(Al sub(x)Ga sub(1-x)) sub(0.5 )In sub(0.5)P/In sub(0.15)Ga sub(0.85)As (x=0, 0. 3, 1. 0) heterostructure doped-channel FETs for microwave power applications

IEEE transactions on electron devices, 2001-01, Vol.48 (12)

2001

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Electronic and Photonic Device Applications of In 0.5 Ga 0.5 P and In 0.5 Al 0.5 P Grown by Gas Source Molecular Beam Epitaxy

MRS proceedings, 1994, Vol.340, Article 71

Kuo, Jenn-Ming

1994

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In(0.5)(Al(x)Ga(1-x))(0.5) HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

IEEE transactions on microwave theory and techniques, 1999-08, Vol.47 (8), p.1404-1412

1999

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In/sub 0.5/(Al/sub x/Ga/sub 1-x/)/sub 0.5/ HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

IEEE transactions on microwave theory and techniques, 1999-08, Vol.47 (8), p.1404-1412

1999

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In(0.5)(Al(x)Ga(1-x))(0.5)P HEMT's for high-efficiency low-voltage power amplifiers - Design, fabrication, and device results

IEEE transactions on microwave theory and techniques, 1999-08, Vol.47 (8), p.1404-1412

1999

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Molecular Beam Epitaxy as a Mass Production Enabling Technology for Electronic/Optoelectronic Devices

Molecular Beam Epitaxy, 2018

Henini, Mohamed

2018

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In sub(0.5)(Al sub(x)Ga sub(1-x)) sub(0.5) HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

IEEE transactions on microwave theory and techniques, 1999-01, Vol.47 (8)

1999

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High temperature performance of pseudomorphic HEMTs with WSix gates

Solid-state electronics, 1995-02, Vol.38 (2), p.457-459

1995

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High temperature performance of [formula omitted] pseudomorphic HEMTs with WSi x gates

Solid-state electronics, 1995, Vol.38 (2), p.457-459

1995

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A NOVEL PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR UTILIZING MOLECULAR BEAM EPITAXIALLY GROWN GALLIUM(0.47-U) INDIUM(0.53+U)ARSENIC / ALUMINUM(0.48+U)INDIUM(0.52-U)ARSENIC HETEROSTRUCTURES

KUO, JENN-MING

1987

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Effect of dopant profile on current-voltage characteristics of p+n+ In0.53Ga0.47As tunnel junctions

2009 International Semiconductor Device Research Symposium, 2009, p.1-2

2009

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MMP1 expression is activated by Slug and enhances multi-drug resistance (MDR) in breast cancer

PloS one, 2017-03, Vol.12 (3), p.e0174487-e0174487

2017

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Short pulse transfer characteristics of Al sub(x)Ga sub(1-x)As/GaAs and Al sub(x)Ga sub(1-x)As/In sub(y)Ga sub(1-y)As modulation-doped heterojunction FET's

IEEE electron device letters, 1990-01, Vol.11 (7), p.306-308

1990

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Orientation dependence of the electrochemical corrosion properties of electrodeposited Cu foils

Corrosion science, 2013-09, Vol.74, p.223-231

2013

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Optimization of Piezoresistive Strain Sensors Based on Gold Nanoparticle Deposits on PDMS Substrates for Highly Sensitive Human Pulse Sensing

Nanomaterials (Basel, Switzerland), 2022-07, Vol.12 (13), p.2312

2022

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Successful reuse of a transplanted kidney 9 years after initial transplantation: 4-year follow-up

BMC nephrology, 2018-09, Vol.19 (1), p.234-234, Article 234

2018

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37-GHz bandwidth monolithically integrated InP HBT/evanescently coupled photodiode

Ultra low background InGaAs epi-layer on InP for PIN applications by production MBE

InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and I_ON/I_OFF Ratio Near {10}6

InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and [Formula Omitted] Ratio Near [Formula Omitted]

Fe implantation in In0.53Ga0.47As/InP

Al sub(x)Ga sub(1-x)) sub(0.5)In sub(0.5)P /In sub(0.15)Ga sub(0.85)As (x = 0, 0.3, 1.0) Heterostructure doped-channel FETs for microwave power applications

(Al)x)Ga)1-x)))0.5)In)0.5)P/In)0.15)Ga)0.85)As (x=0, 0. 3, 1. 0) heterostructuredoped-channel FETs for microwave power applications

(AlxGa1-x)0.5In0.5P/In 0.15Ga0.85As (x=0, 0. 3, 1. 0) heterostructure doped-channel FETs for microwave power applications

(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/In/sub 0.15/Ga/sub 0.85/As (x=0, 0. 3, 1. 0) heterostructure doped-channel FETs for microwave power applications

(Al sub(x)Ga sub(1-x)) sub(0.5 )In sub(0.5)P/In sub(0.15)Ga sub(0.85)As (x=0, 0. 3, 1. 0) heterostructure doped-channel FETs for microwave power applications

Electronic and Photonic Device Applications of In 0.5 Ga 0.5 P and In 0.5 Al 0.5 P Grown by Gas Source Molecular Beam Epitaxy

In(0.5)(Al(x)Ga(1-x))(0.5) HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

In/sub 0.5/(Al/sub x/Ga/sub 1-x/)/sub 0.5/ HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

In(0.5)(Al(x)Ga(1-x))(0.5)P HEMT's for high-efficiency low-voltage power amplifiers - Design, fabrication, and device results

Molecular Beam Epitaxy as a Mass Production Enabling Technology for Electronic/Optoelectronic Devices

In sub(0.5)(Al sub(x)Ga sub(1-x)) sub(0.5) HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

High temperature performance of pseudomorphic HEMTs with WSix gates

High temperature performance of [formula omitted] pseudomorphic HEMTs with WSi x gates

A NOVEL PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR UTILIZING MOLECULAR BEAM EPITAXIALLY GROWN GALLIUM(0.47-U) INDIUM(0.53+U)ARSENIC / ALUMINUM(0.48+U)INDIUM(0.52-U)ARSENIC HETEROSTRUCTURES

Effect of dopant profile on current-voltage characteristics of p+n+ In0.53Ga0.47As tunnel junctions

MMP1 expression is activated by Slug and enhances multi-drug resistance (MDR) in breast cancer

Short pulse transfer characteristics of Al sub(x)Ga sub(1-x)As/GaAs and Al sub(x)Ga sub(1-x)As/In sub(y)Ga sub(1-y)As modulation-doped heterojunction FET's

Orientation dependence of the electrochemical corrosion properties of electrodeposited Cu foils

Optimization of Piezoresistive Strain Sensors Based on Gold Nanoparticle Deposits on PDMS Substrates for Highly Sensitive Human Pulse Sensing

Successful reuse of a transplanted kidney 9 years after initial transplantation: 4-year follow-up

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