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Dissipative quantum transport in silicon nanowires based on Wigner transport equation

Journal of applied physics, 2011-11, Vol.110 (9), p.093710-093710-8

Barraud, Sylvain

2011

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Gate-based high fidelity spin readout in a CMOS device

Nature nanotechnology, 2019-08, Vol.14 (8), p.737-741

2019

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Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices

Applied physics letters, 2019-03, Vol.114 (12)

2019

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Gate-Sensing Coherent Charge Oscillations in a Silicon Field-Effect Transistor

Nano letters, 2016-03, Vol.16 (3), p.1614-1619

2016

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Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor

Nano letters, 2014-04, Vol.14 (4), p.2094-2098

2014

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Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

npj quantum information, 2018-02, Vol.4 (1), p.1-7, Article 6

2018

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Dopant-controlled single-electron pumping through a metallic island

Applied physics letters, 2016-05, Vol.108 (21)

2016

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Large Dispersive Interaction between a CMOS Double Quantum Dot and Microwave Photons

PRX quantum, 2021-05, Vol.2 (2), p.020315, Article 020315

2021

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The influence of Coulomb centers located in HfO2/SiO2 gate stacks on the effective electron mobility

Journal of applied physics, 2008-10, Vol.104 (7)

2008

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Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Applied physics letters, 2014-12, Vol.105 (26)

2014

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Quantum interference capacitor based on double-passage Landau-Zener-Stückelberg-Majorana interferometry

Physical review. B, 2019-11, Vol.100 (20), p.1, Article 205425

2019

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Phase-coherent quantum transport in silicon nanowires based on Wigner transport equation: Comparison with the nonequilibrium-Green-function formalism

Journal of applied physics, 2009-09, Vol.106 (6), p.063714-063714-7

Barraud, Sylvain

2009

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Effect of strain on the electron effective mobility in biaxially strained silicon inversion layers: An experimental and theoretical analysis via atomic force microscopy measurements and Kubo-Greenwood mobility calculations

Journal of applied physics, 2008-03, Vol.103 (6), p.063715-063715-9

2008

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Development of a CMOS Route for Electron Pumps to Be Used in Quantum Metrology

Technologies (Basel), 2016-03, Vol.4 (1), p.10

2016

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Aptasensors based on silicon nanowire field-effect transistors for electrical detection of thrombin

Microelectronic engineering, 2024-03, Vol.286, p.112130, Article 112130

2024

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Influence of interface traps position along channel in the low-frequency noise of junctionless nanowire transistors

Solid-state electronics, 2024-02, Vol.212, p.108835, Article 108835

2024

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Comprehensive evaluation of gate-induced drain leakage in SOI stacked nanowire nMOSFETs operating in high-temperatures

Solid-state electronics, 2024-04, Vol.214, p.108865, Article 108865

2024

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Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET

Nanotechnology, 2020-10, Vol.31 (41), p.415201-415201

2020

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Interface traps density extraction through transient measurements in junctionless transistors

Solid-state electronics, 2022-08, Vol.194, p.108302, Article 108302

2022

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Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures

Solid-state electronics, 2023-10, Vol.208, p.108716, Article 108716

2023

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Influence of fin width variation on the electrical characteristics of n-type junctionless nanowire transistors at high temperatures

Solid-state electronics, 2021-11, Vol.185, p.108072, Article 108072

2021

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Electrical characteristics of n-type vertically stacked nanowires operating up to 600 K

Solid-state electronics, 2022-08, Vol.194, p.108337, Article 108337

2022

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Channel width dependent subthreshold operation of tri-gate junctionless transistors

Solid-state electronics, 2020-09, Vol.171, p.107860, Article 107860

2020

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A Simple Interpolation Model for the Carrier Mobility in Trigate and Gate-All-Around Silicon NWFETs

IEEE transactions on electron devices, 2017-06, Vol.64 (6), p.2485-2491

2017

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Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors

Solid-state electronics, 2023-10, Vol.208, p.108737, Article 108737

2023

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Dissipative quantum transport in silicon nanowires based on Wigner transport equation

Gate-based high fidelity spin readout in a CMOS device

Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices

Gate-Sensing Coherent Charge Oscillations in a Silicon Field-Effect Transistor

Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor

Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

Dopant-controlled single-electron pumping through a metallic island

Large Dispersive Interaction between a CMOS Double Quantum Dot and Microwave Photons

The influence of Coulomb centers located in HfO2/SiO2 gate stacks on the effective electron mobility

Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Quantum interference capacitor based on double-passage Landau-Zener-Stückelberg-Majorana interferometry

Phase-coherent quantum transport in silicon nanowires based on Wigner transport equation: Comparison with the nonequilibrium-Green-function formalism

Effect of strain on the electron effective mobility in biaxially strained silicon inversion layers: An experimental and theoretical analysis via atomic force microscopy measurements and Kubo-Greenwood mobility calculations

Development of a CMOS Route for Electron Pumps to Be Used in Quantum Metrology

Aptasensors based on silicon nanowire field-effect transistors for electrical detection of thrombin

Influence of interface traps position along channel in the low-frequency noise of junctionless nanowire transistors

Comprehensive evaluation of gate-induced drain leakage in SOI stacked nanowire nMOSFETs operating in high-temperatures

Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET

Interface traps density extraction through transient measurements in junctionless transistors

Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures

Influence of fin width variation on the electrical characteristics of n-type junctionless nanowire transistors at high temperatures

Electrical characteristics of n-type vertically stacked nanowires operating up to 600 K

Channel width dependent subthreshold operation of tri-gate junctionless transistors

A Simple Interpolation Model for the Carrier Mobility in Trigate and Gate-All-Around Silicon NWFETs

Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors

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