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Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

Journal of physics. D, Applied physics, 2014-02, Vol.47 (7), p.1-18

2014

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Electrical Tuning of Terahertz Plasmonic Crystal Phases

Physical review. X, 2023-10, Vol.13 (4), p.041003, Article 041003

2023

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Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications

Applied physics letters, 2018-03, Vol.112 (13)

2018

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AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range

Semiconductor science and technology, 2019-02, Vol.34 (2), p.24002

2019

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Beatings of ratchet current magneto-oscillations in GaN-based grating gate structures: Manifestation of spin-orbit band splitting

Physical review. B, 2021-07, Vol.104 (4), p.1, Article 045301

2021

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Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Journal of applied physics, 2011-09, Vol.110 (6), p.063110-063110-7

2011

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Contactless electroreflectance of InGaN layers with indium content ≤ 36 % : The surface band bending, band gap bowing, and Stokes shift issues

Journal of applied physics, 2009-12, Vol.106 (11), p.113517-113517-6

2009

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Low-frequency noise in Au-decorated graphene–Si Schottky barrier diode at selected ambient gases

Applied physics letters, 2023-05, Vol.122 (21)

2023

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Publisher’s Note: “Cyan laser diode grown by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 104 , 023503 (2014)]

Applied physics letters, 2014-05, Vol.104 (20)

2014

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Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes

Applied physics letters, 2016-07, Vol.109 (3)

2016

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Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2008-08, Vol.310 (17), p.3983-3986

2008

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Pressure tuning of HgCdTe epitaxial layers—the role of the highly disordered buffer layer

Journal of physics. D, Applied physics, 2025-01, Vol.58 (2), p.25304

2025

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Waveguide Design for Long Wavelength InGaN Based Laser Diodes

Acta physica Polonica, A, 2012-12, Vol.122 (6), p.1031-1033

2012

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InGaN light emitting diodes for 415 nm-520 nm spectral range by plasma assisted MBE

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S917-S920

2009

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Low-frequency noise in ZrS3 van der Waals semiconductor nanoribbons

Applied physics letters, 2023-02, Vol.122 (9)

2023

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Cyan laser diode grown by plasma-assisted molecular beam epitaxy

Applied physics letters, 2014-01, Vol.104 (2), p.23503

2014

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Low frequency noise and trap density in GaN/AlGaN field effect transistors

Applied physics letters, 2019-10, Vol.115 (18)

2019

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Plasmons in AlGaN/GaN grating-gate structure probing with 300 K background illumination

AIP advances, 2023-09, Vol.13 (9), p.095017-095017-5

2023

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Erratum: “Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures” [Appl. Phys. Lett. 107, 262107 (2016)]

Applied physics letters, 2018-08, Vol.113 (9)

2018

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Electrostatic Gates for GaN/AlGaN Quantum Point Contacts

Acta physica Polonica, A, 2012-12, Vol.122 (6), p.1026-1028

2012

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Grating-Gate AlGaN/GaN Plasmonic Crystals for Terahertz Waves Manipulation

International journal of high speed electronics, 2024-04

2024

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Broadening of intersubband and interband transitions in InGaN/AlInN multi-quantum wells

Journal of physics. D, Applied physics, 2010-05, Vol.43 (19), p.195101-195101

2010

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Saturation of photoresponse to intense THz radiation in AlGaN/GaN HEMT detector

Journal of applied physics, 2016-10, Vol.120 (16), p.164507

2016

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In1-xMnxSb - a narrow-gap ferromagnetic semiconductor

Applied physics letters, 2003-06, Vol.82 (24)

2003

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Growth mechanisms in semipolar (202¯1) and nonpolar m-plane (101¯0) AlGaN/GaN structures grown by PAMBE under N-rich conditions

Journal of crystal growth, 2013-08, Vol.377, p.184-191

2013

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Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

Electrical Tuning of Terahertz Plasmonic Crystal Phases

Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications

AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range

Beatings of ratchet current magneto-oscillations in GaN-based grating gate structures: Manifestation of spin-orbit band splitting

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Contactless electroreflectance of InGaN layers with indium content ≤ 36 % : The surface band bending, band gap bowing, and Stokes shift issues

Low-frequency noise in Au-decorated graphene–Si Schottky barrier diode at selected ambient gases

Publisher’s Note: “Cyan laser diode grown by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 104 , 023503 (2014)]

Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes

Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy

Pressure tuning of HgCdTe epitaxial layers—the role of the highly disordered buffer layer

Waveguide Design for Long Wavelength InGaN Based Laser Diodes

InGaN light emitting diodes for 415 nm-520 nm spectral range by plasma assisted MBE

Low-frequency noise in ZrS3 van der Waals semiconductor nanoribbons

Cyan laser diode grown by plasma-assisted molecular beam epitaxy

Low frequency noise and trap density in GaN/AlGaN field effect transistors

Plasmons in AlGaN/GaN grating-gate structure probing with 300 K background illumination

Erratum: “Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures” [Appl. Phys. Lett. 107, 262107 (2016)]

Electrostatic Gates for GaN/AlGaN Quantum Point Contacts

Grating-Gate AlGaN/GaN Plasmonic Crystals for Terahertz Waves Manipulation

Broadening of intersubband and interband transitions in InGaN/AlInN multi-quantum wells

Saturation of photoresponse to intense THz radiation in AlGaN/GaN HEMT detector

In1-xMnxSb - a narrow-gap ferromagnetic semiconductor

Growth mechanisms in semipolar (202¯1) and nonpolar m-plane (101¯0) AlGaN/GaN structures grown by PAMBE under N-rich conditions

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