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Superconducting platinum silicide for electron cooling in silicon

Solid-state electronics, 2015-01, Vol.103, p.15-18

2015

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Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Journal of applied physics, 2004-12, Vol.96 (11), p.6470-6476

2004

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Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si 0.3Ge 0.7 channel grown by MBE

Applied surface science, 2004, Vol.224 (1), p.265-269

2004

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Preparation of polycrystalline and monocrystalline Fe3−xTixO4spinels

Journal of crystal growth, 1984-11, Vol.69 (1), p.101-107

1984

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Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system

Physica. B, Condensed matter, 2001-04, Vol.298 (1-4), p.496-500

2001

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Universality at a quantum Hall–Hall insulator transition in a Si/Si0.87Ge0.13 2D hole system

Physica. E, Low-dimensional systems & nanostructures, 2000-02, Vol.6 (1-4), p.297-300

2000

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Low frequency noise measurements of p-channel Si/sub 1-x/Ge/sub x/ MOSFET's

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1484-1486

1999

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Spin precession observation in quantum corrections to resistance of Si 0.7Ge 0.3/Si 0.2Ge 0.8 heterostructure with 2DHG

Physica. E, Low-dimensional systems & nanostructures, 2003, Vol.18 (1), p.145-146

2003

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Study of velocity field characteristics in pseudomorphic Si 0.8Ge 0.2 p-channel metal-oxide-semiconductor field effect transistor

Microelectronic engineering, 2000, Vol.51, p.541-546

2000

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Spin precession observation in quantum corrections to resistance of Si0.7Ge0.3/Si0.2Ge0.8 heterostructure with 2DHG

Physica. E, Low-dimensional systems & nanostructures, 2003-05, Vol.18 (1-3), p.145-146

2003

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Universality at a quantum Hall – Hall insulator transition in a Si/Si 0.87Ge 0.13 2D hole system

Physica. E, Low-dimensional systems & nanostructures, 2000, Vol.6 (1), p.297-300

2000

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Transconductance, carrier mobility and 1/ f noise in Si/Si 0.64Ge 0.36/Si pMOSFETs

Materials science & engineering. B, Solid-state materials for advanced technology, 2002, Vol.89 (1), p.444-448

2002

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Two dimensional phonon-drag thermopower in Si 0.87Ge 0.13/Si (001) heterostructure grown by MBE

Microelectronic engineering, 2000, Vol.51, p.527-534

2000

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Thermoelectric power of the Si/Si 0.8 Ge 0.2 two-dimensional hole gas

Thin solid films, 1997, Vol.294 (1), p.182-185

1997

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Thermoelectric power of the Si/Si0.8 Ge0.2 two-dimensional hole gas

Thin solid films, 1997-02, Vol.294 (1-2), p.182-185

1997

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Magnetotransport anomalies in dilute two-dimensional electron systems: an experiment and a model

Surface science, 1996-01, Vol.361, p.933-936

1996

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Optical properties of Si/Si1-xGex heterostructure based wires

Solid state communications, 1993, Vol.85 (3), p.199-202

1993

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Observation of piezoelectric-like behaviour in coherently strained B-doped [formula omitted] heterostructures

Journal of crystal growth, 1995-12, Vol.157 (1), p.382-385

1995

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Photoluminescence and Raman spectroscopy of [formula omitted] quantum dots

Journal of crystal growth, 1995-12, Vol.157 (1), p.280-284

1995

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A study of the conduction mechanism of single crystal Li 0.5Fe 2.5O 4 through the transition points

Journal of magnetism and magnetic materials, 1984, Vol.43 (3), p.221-226

1984

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Raman spectroscopy of dry etched Si-Si1-xGex quantum dots

Solid state communications, 1995-05, Vol.94 (5), p.369-372

1995

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Two-dimensional hole gas in SiGe heterostructures: electrical properties and field effect applications

Selected Topics in Group IV and II–VI Semiconductors, 1996, p.353-361

Whall, T.E.

1996

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Raman spectroscopy of dry etched SiSi 1−xGe x quantum dots

Solid state communications, 1995, Vol.94 (5), p.369-372

1995

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Residual strain in Si-Si 1− xGe x quantum dots

Solid-state electronics, 1996, Vol.40 (1), p.383-386

1996

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Transconductance and mobility of Si:B delta MOSFETs

IEEE transactions on electron devices, 1993-01, Vol.40 (1), p.157-162

1993

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Superconducting platinum silicide for electron cooling in silicon

Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si 0.3Ge 0.7 channel grown by MBE

Preparation of polycrystalline and monocrystalline Fe3−xTixO4spinels

Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system

Universality at a quantum Hall–Hall insulator transition in a Si/Si0.87Ge0.13 2D hole system

Low frequency noise measurements of p-channel Si/sub 1-x/Ge/sub x/ MOSFET's

Spin precession observation in quantum corrections to resistance of Si 0.7Ge 0.3/Si 0.2Ge 0.8 heterostructure with 2DHG

Study of velocity field characteristics in pseudomorphic Si 0.8Ge 0.2 p-channel metal-oxide-semiconductor field effect transistor

Spin precession observation in quantum corrections to resistance of Si0.7Ge0.3/Si0.2Ge0.8 heterostructure with 2DHG

Universality at a quantum Hall – Hall insulator transition in a Si/Si 0.87Ge 0.13 2D hole system

Transconductance, carrier mobility and 1/ f noise in Si/Si 0.64Ge 0.36/Si pMOSFETs

Two dimensional phonon-drag thermopower in Si 0.87Ge 0.13/Si (001) heterostructure grown by MBE

Thermoelectric power of the Si/Si 0.8 Ge 0.2 two-dimensional hole gas

Thermoelectric power of the Si/Si0.8 Ge0.2 two-dimensional hole gas

Magnetotransport anomalies in dilute two-dimensional electron systems: an experiment and a model

Optical properties of Si/Si1-xGex heterostructure based wires

Observation of piezoelectric-like behaviour in coherently strained B-doped [formula omitted] heterostructures

Photoluminescence and Raman spectroscopy of [formula omitted] quantum dots

A study of the conduction mechanism of single crystal Li 0.5Fe 2.5O 4 through the transition points

Raman spectroscopy of dry etched Si-Si1-xGex quantum dots

Two-dimensional hole gas in SiGe heterostructures: electrical properties and field effect applications

Raman spectroscopy of dry etched SiSi 1−xGe x quantum dots

Residual strain in Si-Si 1− xGe x quantum dots

Transconductance and mobility of Si:B delta MOSFETs

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