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Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

Applied physics letters, 2015-03, Vol.106 (9)

2015

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Influence of nanowires length on performance of crystalline silicon solar cell

Applied physics letters, 2011-04, Vol.98 (15), p.151116-151116-3

2011

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Understanding dipole formation at dielectric/dielectric hetero-interface

Applied physics letters, 2018-10, Vol.113 (18)

2018

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Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode

Micromachines (Basel), 2021-10, Vol.12 (11), p.1296

2021

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Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode

Micromachines (Basel), 2022-05, Vol.13 (5), p.748

2022

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Silicon nanowire-array-textured solar cells for photovoltaic application

Journal of applied physics, 2010-11, Vol.108 (9), p.094318-094318-5

2010

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Exploration of the impact of interface states density on the specific contact resistivity in TiSix/n+-Si Ohmic contacts through high-low frequency method

Japanese Journal of Applied Physics, 2019-07, Vol.58 (SH), p.SHHD01

2019

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Band alignment of HfO2 on SiO2/Si structure

Applied physics letters, 2012-03, Vol.100 (12)

2012

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Probability property of orbital angular momentum distortion in turbulence

Optics express, 2021-12, Vol.29 (26), p.44157

2021

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Role of Carbon Pre-Germanidation Implantation on Enhancing the Thermal Stability of NiGe Films Below 10 nm Thickness

ECS journal of solid state science and technology, 2020-06, Vol.9 (5), p.54006

2020

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Process Dependency of Focusing and Leveling Measurement System in Nanoscale Lithography

Guangxué xuébào, 2016-08, Vol.36 (8), p.812001

2016

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Impact of Ge pre-amorphization implantation on forming ultrathin TiGe x on both n- and p-Ge substrate

Japanese Journal of Applied Physics, 2018-07, Vol.57 (7S2), p.7

2018

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Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs

Journal of semiconductors, 2016-07, Vol.37 (7), p.63-67

滕渊朱阳军韩郑生叶甜春

2016

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A 2.41ppm/°C bandgap voltage reference with second‐order curvature compensation

International journal of circuit theory and applications, 2024-11, Vol.52 (11), p.5539-5553

2024

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Mask 3D parameter optimization for improving imaging contrast of plasmonic lithography

Applied optics (2004), 2024-06, Vol.63 (18), p.4809

2024

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Electrode-contact enhancement in silicon nanowire-array-textured solar cells

Applied physics letters, 2011-04, Vol.98 (14)

2011

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Scintillation of the orbital angular momentum of a Bessel Gaussian beam and its application on multi-parameter multiplexing

Optics express, 2023-01, Vol.31 (3), p.4507

2023

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Investigation of Key Technologies for Poly-Si/TaN/HfLaON/IL Gate-Stacks in Advanced Device Applications

IEEE transactions on electron devices, 2014-04, Vol.61 (4), p.991-997

2014

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Three-dimensional plasmonic lithography imaging modeling based on the RCWA algorithm for computational lithography

Optics express, 2023-10, Vol.31 (22), p.36061-36077

2023

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Rear surface protection and front surface bi-layer passivation for silicon nanostructure-textured solar cells

Journal of physics. D, Applied physics, 2013-01, Vol.46 (2), p.25101-1-6

2013

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LTE turbo decoder design

Journal of semiconductors, 2015-07, Vol.36 (7), p.75003

2015

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Foreword to the Journal of Microelectronic Manufacturing

Journal of microelectronic manufacturing, 2018-09, Vol.1 (1)

Tianchun Ye

2018

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Simulation and fabrication of thin film bulk acoustic wave resonator

Journal of semiconductors, 2016-07, Vol.37 (7), p.86-91

韩茜茜欧毅李志刚欧文陈大鹏叶甜春

2016

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Cycle-to-Cycle Intrinsic RESET Statistics in -Based Unipolar RRAM Devices

IEEE electron device letters, 2013-05, Vol.34 (5), p.623-625

2013

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Foreword to the Journal of Microelectronic Manufacturing Generalized Euler'Constant Family

Journal of microelectronic manufacturing, 2018, Vol.1 (1), p.1-1

Ye, Tianchun

2018

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Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

Influence of nanowires length on performance of crystalline silicon solar cell

Understanding dipole formation at dielectric/dielectric hetero-interface

Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode

Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode

Silicon nanowire-array-textured solar cells for photovoltaic application

Exploration of the impact of interface states density on the specific contact resistivity in TiSix/n+-Si Ohmic contacts through high-low frequency method

Band alignment of HfO2 on SiO2/Si structure

Probability property of orbital angular momentum distortion in turbulence

Role of Carbon Pre-Germanidation Implantation on Enhancing the Thermal Stability of NiGe Films Below 10 nm Thickness

Process Dependency of Focusing and Leveling Measurement System in Nanoscale Lithography

Impact of Ge pre-amorphization implantation on forming ultrathin TiGe x on both n- and p-Ge substrate

Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs

A 2.41ppm/°C bandgap voltage reference with second‐order curvature compensation

Mask 3D parameter optimization for improving imaging contrast of plasmonic lithography

Electrode-contact enhancement in silicon nanowire-array-textured solar cells

Scintillation of the orbital angular momentum of a Bessel Gaussian beam and its application on multi-parameter multiplexing

Investigation of Key Technologies for Poly-Si/TaN/HfLaON/IL Gate-Stacks in Advanced Device Applications

Three-dimensional plasmonic lithography imaging modeling based on the RCWA algorithm for computational lithography

Rear surface protection and front surface bi-layer passivation for silicon nanostructure-textured solar cells

LTE turbo decoder design

Foreword to the Journal of Microelectronic Manufacturing

Simulation and fabrication of thin film bulk acoustic wave resonator

Cycle-to-Cycle Intrinsic RESET Statistics in -Based Unipolar RRAM Devices

Foreword to the Journal of Microelectronic Manufacturing Generalized Euler'Constant Family

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