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Erbium-Doped Fiber Amplifiers: Fundamentals and Technology

1, 1999

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Improvement of photoluminescence of molecular beam epitaxially grown GaxAlyIn1-x-yAs by using an As2molecular beam

IEEE electron device letters, 1983-08, Vol.4 (8), p.275-277

1983

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15,000 km fibre-optic transmission using a linear repeater

Electronics letters, 1987, Vol.23 (12), p.659

Olsson, N.A.

1987

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High-speed direct single-frequency modulation with large tuning rate and frequency excursion in cleaved-coupled-cavity semiconductor lasers

Applied physics letters, 1983-04, Vol.42 (8), p.650-652

1983

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Measured spectral linewidth of single-frequency 1.3 and 1.5 μm injection lasers

Electronics letters, 1984, Vol.20 (24), p.1011-1012

1984

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A 970 nm strained-layer InGaAs/GaAlAs quantum well laser for pumping an erbium-doped optical fiber amplifier

Applied physics letters, 1990-01, Vol.56 (3), p.221-223

1990

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Room-temperature continuous-wave vertical-cavity surface-emitting GaAs injection lasers

Applied physics letters, 1989-12, Vol.55 (24), p.2473-2475

1989

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Gbit/s transmission experiments with a 1.3 μm high-speed surface-emitting LED and multimode graded-index fibre

Electronics letters, 1986, Vol.22 (14), p.761

1986

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Current Problems In Lightweve Communications

LEOS '92 Conference Proceedings, 1992, p.6-6

Olsson, N.A.

1992

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ASK heterodyne receiver sensitivity measurements with two in-line 1.5 μm optical amplifiers

Electronics letters, 1985, Vol.21 (23), p.1085-1087

OLSSON, N. A

1985

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Semiconductor Laser Optical Amplifiers

Conference Proceedings LEOS Lasers and Electro-Optics Society, 1988, p.122-126

Olsson, N.A.

1988

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Effect of thermionic electron emission from the active layer on the internal quantum efficiency of InGaAsP lasers operating at 1. 3 [mu]m

IEEE journal of quantum electronics, 1994-02, Vol.30:2

1994

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Effect of thermionic electron emission from the active layer on the internal quantum efficiency of InGaAsP lasers operating at 1.3 /spl mu/m

IEEE journal of quantum electronics, 1994-02, Vol.30 (2), p.219-221

1994

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High-gain and high-efficiency diode laser pumped fiber amplifier at 1.56 mu m

IEEE photonics technology letters, 1989-09, Vol.1 (9), p.267-269

1989

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16 Gbit/s, 70 km pulse transmission by simultaneous dispersion and loss compensation with 1.5 μm optical amplifiers

Electronics letters, 1989, Vol.25 (9), p.603-605

1989

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High-gain and high-efficiency diode laser pumped fiber amplifier at 1. 56. mu. m

IEEE photonics technology letters, 1989-09, Vol.1:9

1989

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External-cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range

Applied physics letters, 1990-02, Vol.56 (9), p.816-817

1990

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Two-stage high-gain optical amplifier

Journal of lightwave technology, 1989-05, Vol.7 (5), p.791-793

1989

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High power output 1. 48--1. 51. mu. m continuously graded index separate confinement strained quantum well lasers

Applied physics letters, 1990-07, Vol.57:3

1990

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Linewidth enhancement factor and high temperature performance of 1.48 mu m strained InGaAs-InGaAsP multiquantum well laser

IEEE journal of quantum electronics, 1991-03, Vol.27 (3), p.678-680

1991

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Electroabsorption in GaAs quantum-well waveguides

Electronics letters, 1987, Vol.23 (16), p.853-854

1987

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High output power single ongitudinal mode graded index separate confinement multiple quantum well InGaAs/InP distributed feedback (GRIN SCH MOW DFB) lasers

IEEE photonics technology letters, 1990-07, Vol.2:7

1990

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Carrier induced refractive index change in AlGaAs quantum well lasers

Applied physics letters, 1984-10, Vol.45 (8), p.836-837

1984

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Improvement of photoluminescence of molecular beam epitaxially grown Ga x Al y In 1-x-y As by using an As 2 molecular beam

IEEE electron device letters, 1983-08, Vol.4 (8), p.275-277

1983

Volltextzugriff (PDF)

VB-5 GexSi1-x/Si waveguide photodetectors for 1.3-µm single-mode optical-fiber communications

IEEE transactions on electron devices, 1986-11, Vol.33 (11), p.1860-1861

1986

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Erbium-Doped Fiber Amplifiers: Fundamentals and Technology

Improvement of photoluminescence of molecular beam epitaxially grown GaxAlyIn1-x-yAs by using an As2molecular beam

15,000 km fibre-optic transmission using a linear repeater

High-speed direct single-frequency modulation with large tuning rate and frequency excursion in cleaved-coupled-cavity semiconductor lasers

Measured spectral linewidth of single-frequency 1.3 and 1.5 μm injection lasers

A 970 nm strained-layer InGaAs/GaAlAs quantum well laser for pumping an erbium-doped optical fiber amplifier

Room-temperature continuous-wave vertical-cavity surface-emitting GaAs injection lasers

Gbit/s transmission experiments with a 1.3 μm high-speed surface-emitting LED and multimode graded-index fibre

Current Problems In Lightweve Communications

ASK heterodyne receiver sensitivity measurements with two in-line 1.5 μm optical amplifiers

Semiconductor Laser Optical Amplifiers

Effect of thermionic electron emission from the active layer on the internal quantum efficiency of InGaAsP lasers operating at 1. 3 [mu]m

Effect of thermionic electron emission from the active layer on the internal quantum efficiency of InGaAsP lasers operating at 1.3 /spl mu/m

High-gain and high-efficiency diode laser pumped fiber amplifier at 1.56 mu m

16 Gbit/s, 70 km pulse transmission by simultaneous dispersion and loss compensation with 1.5 μm optical amplifiers

High-gain and high-efficiency diode laser pumped fiber amplifier at 1. 56. mu. m

External-cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range

Two-stage high-gain optical amplifier

High power output 1. 48--1. 51. mu. m continuously graded index separate confinement strained quantum well lasers

Linewidth enhancement factor and high temperature performance of 1.48 mu m strained InGaAs-InGaAsP multiquantum well laser

Electroabsorption in GaAs quantum-well waveguides

High output power single ongitudinal mode graded index separate confinement multiple quantum well InGaAs/InP distributed feedback (GRIN SCH MOW DFB) lasers

Carrier induced refractive index change in AlGaAs quantum well lasers

Improvement of photoluminescence of molecular beam epitaxially grown Ga x Al y In 1-x-y As by using an As 2 molecular beam

VB-5 GexSi1-x/Si waveguide photodetectors for 1.3-µm single-mode optical-fiber communications

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