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20 Gb/s 85 ^C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots

IEEE journal of selected topics in quantum electronics, 2007-09, Vol.13 (5), p.1302-1308

2007

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Identification of bound exciton complexes in ZnO

Physica Status Solidi (b), 2004-03, Vol.241 (3), p.607-611

2004

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120°C 20 Gbit/s operation of 980 nm VCSEL

Electronics letters, 2008-10, Vol.44 (22), p.1305-1306

2008

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Ultra-High-Bandwidth (>35 GHz) Electrooptically-Modulated VCSEL

2006 Optical Fiber Communication Conference and the National Fiber Optic Engineers Conference, 2006, p.1-3

2006

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All quantum dot modelocked vertical external cavity surface emitting laser

2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference, 2009, p.1-2

2009

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Effect of Annealing on Defects in As-Grown and γ-Ray Irradiated n-GaN Layers

physica status solidi (b), 1999-11, Vol.216 (1), p.533-536

1999

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120 °C 20 Gbit/s operation of 980 nm single mode VCSEL

2008 IEEE 21st International Semiconductor Laser Conference, 2008, p.9-10

2008

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High-speed directly and indirectly modulated VCSELs

2008 20th International Conference on Indium Phosphide and Related Materials, 2008, p.1-6

2008

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20 Gb/s 85 °C Error Free Operation of VCSEL based on Submonolayer Deposition of Quantum Dots

2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest, 2006, p.119-120

2006

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Optical Properties of Structures with Single and Multiple InGaN Insertions in a GaN Matrix

physica status solidi (b), 1999-11, Vol.216 (1), p.435-440

1999

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RT lasing and efficient optical confinement in CdSe/ZnMgSSe submonolayer superlattices

Journal of crystal growth, 1998, Vol.184, p.545-549

1998

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1300nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots

Journal of crystal growth, 2001-07, Vol.227-228, p.1146-1150

2001

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Monolithic Hybrid and Passive Mode-Locked 40GHz Quantum Dot Laser Diodes

2006 European Conference on Optical Communications, 2006, p.1-2

2006

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Photopumped InGaN/GaN/AlGaN Vertical Cavity Surface Emitting Laser Operating at Room Temperature

physica status solidi (b), 1999-11, Vol.216 (1), p.511-515

1999

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InAs/InGaAs Quantum Dot Microcavity Diode Structures on GaAs Substrates Emitting in the 1.25-1.33 μm Wavelength Range

Physica status solidi. B. Basic research, 2001-04, Vol.224 (3), p.803-806

2001

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Large Spectral Splitting of TE and TM Components of QDs in a Microcavity

physica status solidi (b), 2001-04, Vol.224 (3), p.811-814

2001

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Characteristics of high-performance 1.0 /spl mu/m and 1.3 /spl mu/m quantum dot lasers: impact of p-doping and tunnel injection

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC, 2004, p.156-157 vol.1

2004

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InAs/InGaAs Quantum Dot Microcavity Diode Structures on GaAs Substrates Emitting in the 1.25-1.33 ?m Wavelength Range

physica status solidi (b), 2001-04, Vol.224 (3), p.803-806

2001

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Interband magneto-optics of CdSe and optical spectra of CdSe-based quantum dots

Journal of crystal growth, 1998, Vol.184, p.315-319

1998

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InGaAs nanodomains formed in situ on the surface of (Al,Ga)As

Technical physics letters, 2001-03, Vol.27 (3), p.233-235

2001

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Gain studies and lasing in excitonic waveguides of II–VI submonolayer structures

Physica. E, Low-dimensional systems & nanostructures, 1998-07, Vol.2 (1), p.542-546

1998

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Optical properties of InGaN quantum dots

Superlattices and microstructures, 2004-10, Vol.36 (4), p.763-772

2004

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First modelocked vertical external cavity surface emitting laser using quantum dot layers for gain and SESAM

CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, 2009, p.1-1

2009

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Absorber length optimisation for sub-picosecond pulse generation and ultra-low jitter performance in passively mode-locked 1.3 /spl mu/m quantum-dot laser diodes

2006 Optical Fiber Communication Conference and the National Fiber Optic Engineers Conference, 2006, p.3 pp.

2006

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High-power quantum dot based semiconductor disk laser

CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, 2009, p.1-1

2009

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20 Gb/s 85 ^C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots

Identification of bound exciton complexes in ZnO

120°C 20 Gbit/s operation of 980 nm VCSEL

Ultra-High-Bandwidth (>35 GHz) Electrooptically-Modulated VCSEL

All quantum dot modelocked vertical external cavity surface emitting laser

Effect of Annealing on Defects in As-Grown and γ-Ray Irradiated n-GaN Layers

120 °C 20 Gbit/s operation of 980 nm single mode VCSEL

High-speed directly and indirectly modulated VCSELs

20 Gb/s 85 °C Error Free Operation of VCSEL based on Submonolayer Deposition of Quantum Dots

Optical Properties of Structures with Single and Multiple InGaN Insertions in a GaN Matrix

RT lasing and efficient optical confinement in CdSe/ZnMgSSe submonolayer superlattices

1300nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots

Monolithic Hybrid and Passive Mode-Locked 40GHz Quantum Dot Laser Diodes

Photopumped InGaN/GaN/AlGaN Vertical Cavity Surface Emitting Laser Operating at Room Temperature

InAs/InGaAs Quantum Dot Microcavity Diode Structures on GaAs Substrates Emitting in the 1.25-1.33 μm Wavelength Range

Large Spectral Splitting of TE and TM Components of QDs in a Microcavity

Characteristics of high-performance 1.0 /spl mu/m and 1.3 /spl mu/m quantum dot lasers: impact of p-doping and tunnel injection

InAs/InGaAs Quantum Dot Microcavity Diode Structures on GaAs Substrates Emitting in the 1.25-1.33 ?m Wavelength Range

Interband magneto-optics of CdSe and optical spectra of CdSe-based quantum dots

InGaAs nanodomains formed in situ on the surface of (Al,Ga)As

Gain studies and lasing in excitonic waveguides of II–VI submonolayer structures

Optical properties of InGaN quantum dots

First modelocked vertical external cavity surface emitting laser using quantum dot layers for gain and SESAM

Absorber length optimisation for sub-picosecond pulse generation and ultra-low jitter performance in passively mode-locked 1.3 /spl mu/m quantum-dot laser diodes

High-power quantum dot based semiconductor disk laser

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