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Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma

ACS applied materials & interfaces, 2015-09, Vol.7 (35), p.19857-19862

2015

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Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

Applied physics letters, 2001-04, Vol.78 (16), p.2357-2359

2001

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IR and NMR Study of the Chemisorption of Ammonia on Trimethylaluminum-Modified Silica

The journal of physical chemistry. B, 2000-07, Vol.104 (28), p.6599-6609

2000

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ALD Technology - Present and Future Challenges

ECS transactions, 2007, Vol.3 (15), p.15-26

Haukka, Suvi

2007

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Erratum: “History of atomic layer deposition and its relationship with the American Vacuum Society” [J. Vac. Sci. Technol. A 31, 050818 (2013)]

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-05, Vol.38 (3)

2020

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Combining Experimental and DFT Investigation of the Mechanism Involved in Thermal Etching of Titanium Nitride Using Alternate Exposures of NbF 5 and CCl 4 , or CCl 4 Only

Advanced materials interfaces, 2021-11, Vol.8 (22)

2021

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An IR and NMR study of the chemisorption of TiCl4 on silica

Journal of physical chemistry (1952), 1993, Vol.97 (19), p.5085-5094

1993

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The reaction of hexamethyldisilazane and subsequent oxidation of trimethylsilyl groups on silica studied by solid-state NMR and FTIR

Journal of physical chemistry (1952), 1994-02, Vol.98 (6), p.1695-1703

1994

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In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Al x Si y O z from Trimethylaluminium, Hexakis(ethylamino)disilane, and Water

Chemistry of materials, 2012-10, Vol.24 (20), p.3859-3867

2012

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History of atomic layer deposition and its relationship with the American Vacuum Society

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2013-09, Vol.31 (5)

2013

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High Growth Rate SiO2 by Atomic Layer Deposition

ECS transactions, 2008, Vol.13 (1), p.453-457

2008

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A Family of Heteroleptic Titanium Guanidinates: Synthesis, Thermolysis, and Surface Reactivity

Inorganic chemistry, 2010-02, Vol.49 (4), p.1976-1982

2010

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Reactions of HMDS, TiCl4, ZrCl4, and AlCl3 with Silica As Interpreted from Low-Frequency Diffuse Reflectance Infrared Spectra

The journal of physical chemistry. B, 1997-12, Vol.101 (49), p.10365-10372

1997

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Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

Applied physics letters, 2003-06, Vol.82 (25), p.4486-4488

2003

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Batch Atomic Layer Deposition of HfO2 and ZrO2 Films Using Cyclopentadienyl Precursors

ECS transactions, 2009, Vol.16 (4), p.135-148

2009

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Reactions of HMDS, TiCl 4 , ZrCl 4 , and AlCl 3 with Silica As Interpreted from Low-Frequency Diffuse Reflectance Infrared Spectra

The journal of physical chemistry. B, 1997-12, Vol.101 (49), p.10365-10372

1997

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Characterization of surface species generated in atomic layer epitaxy on silica

Haukka, Suvi Paivikki

1993

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Atomic Layer Deposition of NbN and Nb(Si)N for Metal Electrodes

ECS transactions, 2006-07, Vol.1 (10), p.131-135

2006

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LEIS Study of ALD WN x C y Growth on Dielectric Layers

ECS transactions, 2006-07, Vol.1 (10), p.71-77

2006

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Scale-up of the BaTiO 3 ALD Process onto 200 mm Wafer

ECS transactions, 2006-07, Vol.1 (10), p.137-141

2006

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An IR and NMR study of the chemisorption of titanium tetrachloride on silica

Journal of physical chemistry (1952), 1993-05, Vol.97 (19), p.5085-5094

1993

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Determination of chromium in catalysts by ultraviolet/visible spectrophotometry

Analyst (London), 1991, Vol.116 (10), p.1055-1057

HAUKKA, S

1991

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Characterization of Atomic Layer Deposited WN[sub x]C[sub y] Thin Film as a Diffusion Barrier for Copper Metallization

Journal of the Electrochemical Society, 2004, Vol.151 (4), p.C272

2004

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ALD Technology - Present and Future Challenges

Meeting abstracts (Electrochemical Society), 2006-06, Vol.MA2006-02 (21), p.1061-1061

Haukka, Suvi

2006

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Properties of Tin Thin Films Deposited by Alcvd as Barrier for Cu Metallization

MRS proceedings, 2000, Vol.612, Article D6.5.1

2000

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Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma

Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

IR and NMR Study of the Chemisorption of Ammonia on Trimethylaluminum-Modified Silica

ALD Technology - Present and Future Challenges

Erratum: “History of atomic layer deposition and its relationship with the American Vacuum Society” [J. Vac. Sci. Technol. A 31, 050818 (2013)]

Combining Experimental and DFT Investigation of the Mechanism Involved in Thermal Etching of Titanium Nitride Using Alternate Exposures of NbF 5 and CCl 4 , or CCl 4 Only

An IR and NMR study of the chemisorption of TiCl4 on silica

The reaction of hexamethyldisilazane and subsequent oxidation of trimethylsilyl groups on silica studied by solid-state NMR and FTIR

In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Al x Si y O z from Trimethylaluminium, Hexakis(ethylamino)disilane, and Water

History of atomic layer deposition and its relationship with the American Vacuum Society

High Growth Rate SiO2 by Atomic Layer Deposition

A Family of Heteroleptic Titanium Guanidinates: Synthesis, Thermolysis, and Surface Reactivity

Reactions of HMDS, TiCl4, ZrCl4, and AlCl3 with Silica As Interpreted from Low-Frequency Diffuse Reflectance Infrared Spectra

Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

Batch Atomic Layer Deposition of HfO2 and ZrO2 Films Using Cyclopentadienyl Precursors

Reactions of HMDS, TiCl 4 , ZrCl 4 , and AlCl 3 with Silica As Interpreted from Low-Frequency Diffuse Reflectance Infrared Spectra

Characterization of surface species generated in atomic layer epitaxy on silica

Atomic Layer Deposition of NbN and Nb(Si)N for Metal Electrodes

LEIS Study of ALD WN x C y Growth on Dielectric Layers

Scale-up of the BaTiO 3 ALD Process onto 200 mm Wafer

An IR and NMR study of the chemisorption of titanium tetrachloride on silica

Determination of chromium in catalysts by ultraviolet/visible spectrophotometry

Characterization of Atomic Layer Deposited WN[sub x]C[sub y] Thin Film as a Diffusion Barrier for Copper Metallization

ALD Technology - Present and Future Challenges

Properties of Tin Thin Films Deposited by Alcvd as Barrier for Cu Metallization

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