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Highly Transparent ITO/HfO2/ITO Device for Visible-Light Sensing

IEEE access, 2020, Vol.8, p.91648-91652

2020

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Analysis of large bandgap dielectrics by dual plasmon-photon excitation

Journal of physics. D, Applied physics, 2020-06, Vol.53 (25), p.25

2020

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Study of Trap Generation in the Sc2O3/La2O3/SiOx Gate Dielectric Stack by Scanning Tunneling Microscopy

Shinkū, 2011, Vol.54 (7/8), p.427-436

2011

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hbox\hbox Interface Engineering of Germanium Epitaxial Layer Grown Directly on Silicon

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.56-62

2013

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GeS conducting-bridge resistive memory device with IGZO buffer layer for highly uniform and repeatable switching

Applied physics letters, 2023-05, Vol.122 (20)

2023

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A WO x /MoO x hybrid oxide based SERS FET and investigation on its tunable SERS performance

Physical chemistry chemical physics : PCCP, 2024-04, Vol.26 (14), p.10814-10823

2024

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A WO/MoO hybrid oxide based SERS FET and investigation on its tunable SERS performance

Physical chemistry chemical physics : PCCP, 2024-04, Vol.26 (14), p.1814-1823

2024

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Forming-Free, Self-Compliance WTe 2 -Based Conductive Bridge RAM With Highly Uniform Multilevel Switching for High-Density Memory

IEEE electron device letters, 2023-02, Vol.44 (2), p.253-256

2023

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Emulation of short-term and long-term synaptic plasticity with high uniformity in chalcogenide-based diffusive memristor device for neuromorphic applications

Journal of materials science & technology, 2025-05, Vol.216, p.99-107

2025

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A WOx/MoOx hybrid oxide based SERS FET and investigation on its tunable SERS performance

Physical chemistry chemical physics : PCCP, 2024-04, Vol.26 (14), p.10814-10823

2024

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A novel fabrication technique for high-aspect-ratio nanopillar arrays for SERS application

RSC advances, 2020-12, Vol.1 (73), p.4537-4541

2020

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Recent Progress in Synaptic Devices Paving the Way toward an Artificial Cogni‐Retina for Bionic and Machine Vision

Advanced intelligent systems, 2019-05, Vol.1 (1), p.n/a

2019

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The role of the disordered H f O 2 network in the high-κ n-MOSFET shallow electron trapping

Journal of applied physics, 2019-01, Vol.125 (2)

2019

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Reversion of catalyst valence states for highly efficient water oxidation

Catalysis science & technology, 2023-05, Vol.13 (9), p.282-2826

2023

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Highly Transparent ITO/HfO 2 /ITO Device for Visible-Light Sensing

IEEE access, 2020, Vol.8, p.91648-91652

2020

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The role of the disordered HfO2 network in the high- κ n-MOSFET shallow electron trapping

Journal of applied physics, 2019-01, Vol.125 (2)

2019

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Programmable Photoelectric Memristor Gates for In Situ Image Compression

Advanced intelligent systems, 2020-09, Vol.2 (9), p.n/a

2020

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TiN-Mediated Multi-Level Negative Photoconductance of the ZrO 2 Breakdown Path

IEEE journal of the Electron Devices Society, 2017-05, Vol.5 (3), p.188-192

2017

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An Optoneuronic Device with Realistic Retinal Expressions for Bioinspired Machine Vision

Advanced intelligent systems, 2020-02, Vol.2 (2), p.n/a

2020

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Electrical Tuning of MoO x /Ag Hybrids and Investigation of their Surface‐Enhanced Raman Scattering Performance

Physica status solidi. PSS-RRL. Rapid research letters, 2021-02, Vol.15 (2)

2021

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Ar-Plasma-Modulated Optical Reset in the SiO 2 /Cu Conductive-Bridge Resistive Memory Stack

ECS transactions, 2018-07, Vol.86 (3), p.55-64

2018

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Comparison of the Al sub(x)Ga sub(1-x)N/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon Substrates

IEEE transactions on electron devices, 2016-01, Vol.63 (1), p.345-352

2016

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Comparison of the Al x Ga1- x N/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon Substrates

IEEE transactions on electron devices, 2016-01, Vol.63 (1), p.345

2016

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Comparison of the Al x Ga 1– x N/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon Substrates

IEEE transactions on electron devices, 2016-01, Vol.63 (1), p.345-352

2016

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Single ITO/HfOx/TiN Complementary Switch with a Wide Read Voltage Window for Selector-Less Crossbar RRAM Application

2017 IEEE International Memory Workshop (IMW), 2017, p.1-4

2017

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Highly Transparent ITO/HfO2/ITO Device for Visible-Light Sensing

Analysis of large bandgap dielectrics by dual plasmon-photon excitation

Study of Trap Generation in the Sc2O3/La2O3/SiOx Gate Dielectric Stack by Scanning Tunneling Microscopy

hbox\hbox Interface Engineering of Germanium Epitaxial Layer Grown Directly on Silicon

GeS conducting-bridge resistive memory device with IGZO buffer layer for highly uniform and repeatable switching

A WO x /MoO x hybrid oxide based SERS FET and investigation on its tunable SERS performance

A WO/MoO hybrid oxide based SERS FET and investigation on its tunable SERS performance

Forming-Free, Self-Compliance WTe 2 -Based Conductive Bridge RAM With Highly Uniform Multilevel Switching for High-Density Memory

Emulation of short-term and long-term synaptic plasticity with high uniformity in chalcogenide-based diffusive memristor device for neuromorphic applications

A WOx/MoOx hybrid oxide based SERS FET and investigation on its tunable SERS performance

A novel fabrication technique for high-aspect-ratio nanopillar arrays for SERS application

Recent Progress in Synaptic Devices Paving the Way toward an Artificial Cogni‐Retina for Bionic and Machine Vision

The role of the disordered H f O 2 network in the high-κ n-MOSFET shallow electron trapping

Reversion of catalyst valence states for highly efficient water oxidation

Highly Transparent ITO/HfO 2 /ITO Device for Visible-Light Sensing

The role of the disordered HfO2 network in the high- κ n-MOSFET shallow electron trapping

Programmable Photoelectric Memristor Gates for In Situ Image Compression

TiN-Mediated Multi-Level Negative Photoconductance of the ZrO 2 Breakdown Path

An Optoneuronic Device with Realistic Retinal Expressions for Bioinspired Machine Vision

Electrical Tuning of MoO x /Ag Hybrids and Investigation of their Surface‐Enhanced Raman Scattering Performance

Ar-Plasma-Modulated Optical Reset in the SiO 2 /Cu Conductive-Bridge Resistive Memory Stack

Comparison of the Al sub(x)Ga sub(1-x)N/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon Substrates

Comparison of the Al x Ga1- x N/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon Substrates

Comparison of the Al x Ga 1– x N/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon Substrates

Single ITO/HfOx/TiN Complementary Switch with a Wide Read Voltage Window for Selector-Less Crossbar RRAM Application

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