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Dislocation filtering in SiGe and InGaAs buffer layers grown by selective lateral overgrowth method

Applied physics letters, 1995-03, Vol.66 (10), p.1237-1239

Bryskiewicz, T.

1995

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Properties of very uniform InxGa1-xAs single crystals grown by liquid-phase electroepitaxy

Journal of applied physics, 1990-09, Vol.68 (6), p.3018-3020

1990

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Dopant segregation in electroepitaxy: variation of effective distribution coefficient

Journal of applied physics, 1985-01, Vol.57 (8), p.2783-2787

BRYSKIEWICZ, T

1985

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Liquid phase electroepitaxy of semiconductor compounds

Progress in crystal growth and characterization, 1986, Vol.12 (1), p.29-43

Bryskiewicz, T.

1986

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In quest of unrestricted growth of bulk crystal by liquid phase electroepitaxy

Journal of crystal growth, 1995, Vol.153 (1-2), p.19-24

BRYSKIEWICZ, T

1995

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Elimination of dislocations in bulk GaAs crystals grown by liquid-phase electroepitaxy

Journal of applied physics, 1987, Vol.61 (1), p.359-364

1987

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Electronic and optical properties of Ti-doped GaAs and InP; semi-insulating InP

Journal of applied physics, 1989-05, Vol.65 (9), p.3459-3469

1989

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Metalorganic vapor phase diffusion using dimethylzinc. Part I: Analysis of the reproducibility of the resulting diffusion profile as measured by secondary ion mass spectrometry

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2004-05, Vol.22 (3), p.912-915

2004

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Structural Defects in Thick Ingaas Layers Grown by Lpee on Partially Masked GaAs Substrates

MRS proceedings, 1996, Vol.448, Article 231

BRYSKIEWICZ, T.

1996

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Electroepitaxy of multicomponent systems: ternary and quarternary compounds

Journal of applied physics, 1980-02, Vol.51 (2), p.988-996

1980

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New semi-insulating InP: titanium midgap donors

Applied physics letters, 1986-04, Vol.48 (17), p.1162-1164

1986

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Internal strain and dislocations in Ga1−xAs crystals grown by liquid phase epitaxy/electroepitaxy

Journal of electronic materials, 1995-03, Vol.24 (3), p.203-209

1995

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Transmission electron microscopy characterization of In x Ga1− x As substrates grown by heteroepitaxial lateral overgrowth

Applied physics letters, 1994-05, Vol.64 (18), p.2344-2346

1994

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Cellular structure in LEC ternary Ga 1 − xIn xAs crystals

Journal of crystal growth, 1997, Vol.174 (1), p.250-255

1997

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Improved p-doping profiles in lasers and modulators

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307), 2002, p.627-630

2002

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Properties of in x Ga 1-x As Crystals Grown by Lpee on Patterned GaAs Substrates

MRS proceedings, 1994, Vol.340, Article 367

1994

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Properties of very uniform In x Ga1− x As single crystals grown by liquid-phase electroepitaxy

Journal of applied physics, 1990-09, Vol.68 (6), p.3018-3020

1990

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Properties of very uniform In sub(x)Ga sub(1-x)As single crystals grown by liquid-phase electroepitaxy

Journal of applied physics, 1990-01, Vol.68 (6), p.3018-3020

1990

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Dopant incorporation during liquid phase epitaxy

Journal of applied physics, 1981-01, Vol.52 (3), p.1347-1350

1981

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Cellular structure in LEC ternary Ga1-xInxAs crystals : American crystal growth 1996

Journal of crystal growth, 1997, Vol.174 (1-4), p.250-255

1997

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Ta sub 2 O sub 5 antireflection coatings for near-ir GaAs sub 0 sub . sub 8 sub 0 Sb sub 0 sub . sub 2 sub 0 photodiodes

Thin solid films, 1986-01, Vol.139 (2), p.115-119

1986

Volltextzugriff (PDF)

Erratum: ‘‘Electronic and optical properties of Ti-doped GaAs and InP; semi-insulating InP’’ [J. Appl. Phys. 6 5 , 3459 (1989)]

Journal of applied physics, 1989-09, Vol.66 (6), p.2768-2768

1989

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Electroepitaxy of Multicomponent Systems: Ternary and Quaternary Compounds

Journal of applied physics, 1980-02, Vol.51 (2), p.988-996

1980

Volltextzugriff (PDF)

Ta2O5 antireflection coatings for near-IR GaAs0•80Sb0•20 photodiodes

Thin solid films, 1986, Vol.139 (2), p.115-119

1986

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Reflectivity Spectra of Epitaxial GaAs-Rich GaAs sub 1--x Sb sub x

Applied physics letters, 1984-11, Vol.45 (9), p.988-989

1984

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Dislocation filtering in SiGe and InGaAs buffer layers grown by selective lateral overgrowth method

Properties of very uniform InxGa1-xAs single crystals grown by liquid-phase electroepitaxy

Dopant segregation in electroepitaxy: variation of effective distribution coefficient

Liquid phase electroepitaxy of semiconductor compounds

In quest of unrestricted growth of bulk crystal by liquid phase electroepitaxy

Elimination of dislocations in bulk GaAs crystals grown by liquid-phase electroepitaxy

Electronic and optical properties of Ti-doped GaAs and InP; semi-insulating InP

Metalorganic vapor phase diffusion using dimethylzinc. Part I: Analysis of the reproducibility of the resulting diffusion profile as measured by secondary ion mass spectrometry

Structural Defects in Thick Ingaas Layers Grown by Lpee on Partially Masked GaAs Substrates

Electroepitaxy of multicomponent systems: ternary and quarternary compounds

New semi-insulating InP: titanium midgap donors

Internal strain and dislocations in Ga1−xAs crystals grown by liquid phase epitaxy/electroepitaxy

Transmission electron microscopy characterization of In x Ga1− x As substrates grown by heteroepitaxial lateral overgrowth

Cellular structure in LEC ternary Ga 1 − xIn xAs crystals

Improved p-doping profiles in lasers and modulators

Properties of in x Ga 1-x As Crystals Grown by Lpee on Patterned GaAs Substrates

Properties of very uniform In x Ga1− x As single crystals grown by liquid-phase electroepitaxy

Properties of very uniform In sub(x)Ga sub(1-x)As single crystals grown by liquid-phase electroepitaxy

Dopant incorporation during liquid phase epitaxy

Cellular structure in LEC ternary Ga1-xInxAs crystals : American crystal growth 1996

Ta sub 2 O sub 5 antireflection coatings for near-ir GaAs sub 0 sub . sub 8 sub 0 Sb sub 0 sub . sub 2 sub 0 photodiodes

Erratum: ‘‘Electronic and optical properties of Ti-doped GaAs and InP; semi-insulating InP’’ [J. Appl. Phys. 6 5 , 3459 (1989)]

Electroepitaxy of Multicomponent Systems: Ternary and Quaternary Compounds

Ta2O5 antireflection coatings for near-IR GaAs0•80Sb0•20 photodiodes

Reflectivity Spectra of Epitaxial GaAs-Rich GaAs sub 1--x Sb sub x

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