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Fabrication of three dimensional diamond ultraviolet photodetector through down-top method

Applied physics letters, 2016-10, Vol.109 (15)

2016

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Terahertz monolithic integrated waveguide transmission lines based on wide bandgap semiconductor materials

Journal of applied physics, 2019-04, Vol.125 (15)

2019

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Effect of oxygen plasma treatment on the performance of AlGaN/GaN ion-sensitive field-effect transistors

Diamond and related materials, 2017-03, Vol.73, p.1-6

2017

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Fabrication of ultra-sensitive photoelectrochemical aptamer biosensor: Based on semiconductor/DNA interfacial multifunctional reconciliation via 2D-C3N4

Biosensors & bioelectronics, 2020-02, Vol.150, p.111903-111903, Article 111903

2020

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Graphene quantum dot modified g-C3N4 for enhanced photocatalytic oxidation of ammonia performance

RSC advances, 2017-01, Vol.7 (81), p.51687-51694

2017

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Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor

Chinese physics B, 2022-03, Vol.31 (4), p.47701-764

2022

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Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

Chinese physics B, 2022-11, Vol.31 (12), p.127701-594

2022

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Mechanism on BiVO4 photoanode photoelectrochemical performance improving: Based on surface electrochemical reduction method

Electrochimica acta, 2021-01, Vol.366, p.137288, Article 137288

2021

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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO 4 Photoanode by Doped Quantum Layers Modification

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21), p.e2200454

2022

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Two-dimensional device simulation of AlGaN/GaN heterojunction FET side-gating effect

Japanese Journal of Applied Physics, 2014-11, Vol.53 (11), p.114302-1-114302-7

2014

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Influence of Dry Recess Process on Enhancement-Mode GaN Metal--Oxide--Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics, 2013-01, Vol.52 (1), p.01AG02-01AG02-5

2013

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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification (Small 21/2022)

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21), p.n/a

2022

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Gate-first GaN MOSFET based on dry-etching-assisted non-annealing ohmic process

Applied physics express, 2015-04, Vol.8 (4), p.46501

2015

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1.2 kV GaN Schottky barrier diodes on free-standing GaN wafer using a CMOS-compatible contact material

Japanese Journal of Applied Physics, 2017-02, Vol.56 (2), p.26501-026501

2017

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Evaluation of a Gate-First Process for AlGaN/GaN Heterostructure Field-Effect Transistors

Japanese Journal of Applied Physics, 2013-11, Vol.52 (11), p.11NH01-11NH01-5

2013

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Gate structure dependent normally-off AlGaN/GaN heterostructure field-effect transistors with p-GaN cap layer

Journal of physics. D, Applied physics, 2020-10, Vol.53 (41), p.415104

2020

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Observation of Side-Gating Effect in AlGaN/GaN Heterostructure Field Effect Transistors

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JN28-08JN28-5

2013

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Decreased trap density and lower current collapse in AlGaN/GaN HEMTs by adding a magnetron-sputtered AlN gate

Journal of physics. D, Applied physics, 2022-10, Vol.55 (42), p.425101

2022

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Localized surface plasmon and transferred electron enhanced UV emission of ZnO by periodical aluminum nanoparticle arrays

Journal of luminescence, 2022-04, Vol.244, p.118740, Article 118740

2022

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Photoelectrical characteristics of ultra thin TiO2/diamond photodetector

Materials letters, 2017-02, Vol.188, p.52-54

2017

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GaN Schottky Diodes for Microwave Power Rectification

Japanese Journal of Applied Physics, 2009-04, Vol.48 (4S), p.4

2009

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Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction

Chinese physics B, 2022-09, Vol.31 (10), p.133-138

2022

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Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes

Chinese physics letters, 2019-05, Vol.36 (5), p.57101

2019

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Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors

Chinese physics B, 2017-03, Vol.26 (3), p.37201

2017

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Temperature sensor using thermally stable TiN anode GaN Schottky barrier diode for high power device application

Superlattices and microstructures, 2018-11, Vol.123, p.274-279

2018

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Fabrication of three dimensional diamond ultraviolet photodetector through down-top method

Terahertz monolithic integrated waveguide transmission lines based on wide bandgap semiconductor materials

Effect of oxygen plasma treatment on the performance of AlGaN/GaN ion-sensitive field-effect transistors

Fabrication of ultra-sensitive photoelectrochemical aptamer biosensor: Based on semiconductor/DNA interfacial multifunctional reconciliation via 2D-C3N4

Graphene quantum dot modified g-C3N4 for enhanced photocatalytic oxidation of ammonia performance

Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor

Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

Mechanism on BiVO4 photoanode photoelectrochemical performance improving: Based on surface electrochemical reduction method

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO 4 Photoanode by Doped Quantum Layers Modification

Two-dimensional device simulation of AlGaN/GaN heterojunction FET side-gating effect

Influence of Dry Recess Process on Enhancement-Mode GaN Metal--Oxide--Semiconductor Field-Effect Transistors

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification (Small 21/2022)

Gate-first GaN MOSFET based on dry-etching-assisted non-annealing ohmic process

1.2 kV GaN Schottky barrier diodes on free-standing GaN wafer using a CMOS-compatible contact material

Evaluation of a Gate-First Process for AlGaN/GaN Heterostructure Field-Effect Transistors

Gate structure dependent normally-off AlGaN/GaN heterostructure field-effect transistors with p-GaN cap layer

Observation of Side-Gating Effect in AlGaN/GaN Heterostructure Field Effect Transistors

Decreased trap density and lower current collapse in AlGaN/GaN HEMTs by adding a magnetron-sputtered AlN gate

Localized surface plasmon and transferred electron enhanced UV emission of ZnO by periodical aluminum nanoparticle arrays

Photoelectrical characteristics of ultra thin TiO2/diamond photodetector

GaN Schottky Diodes for Microwave Power Rectification

Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction

Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes

Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors

Temperature sensor using thermally stable TiN anode GaN Schottky barrier diode for high power device application

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