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Direct assessment of solid–liquid interface noise in ion sensing using a differential method

Applied physics letters, 2016-04, Vol.108 (15)

2016

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Minimizing sputter-induced damage during deposition of WS2 onto graphene

Applied physics letters, 2017-02, Vol.110 (9)

2017

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Ultra-shallow junctions formed using microwave annealing

Applied physics letters, 2013-03, Vol.102 (12), p.122114

2013

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A graphene field-effect capacitor sensor in electrolyte

Applied physics letters, 2012-10, Vol.101 (15), p.154106

2012

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An ion-gated bipolar amplifier for ion sensing with enhanced signal and improved noise performance

Applied physics letters, 2014-08, Vol.105 (8)

2014

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Morphological instability of Ag films caused by phase transition in the underlying Ta barrier layer

Applied physics letters, 2014-08, Vol.105 (7), p.71604

2014

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Percolation in random networks of heterogeneous nanotubes

Applied physics letters, 2007-12, Vol.91 (25), p.253127-253127-3

2007

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Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1−xPtx on Si substrate

Applied physics letters, 2010-02, Vol.96 (7), p.071915

2010

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Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1−xPtx silicide films

Applied physics letters, 2010-12, Vol.97 (25), p.252108

2010

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A two-terminal silicon nanoribbon field-effect pH sensor

Applied physics letters, 2010-12, Vol.97 (26), p.264102

2010

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Improved electrical performance of carbon nanotube thin film transistors by utilizing composite networks

Applied physics letters, 2008-03, Vol.92 (13), p.133103-133103-3

2008

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Distinguishing self-gated rectification action from ordinary diode rectification in back-gated carbon nanotube devices

Applied physics letters, 2008-03, Vol.92 (13), p.133111-133111-3

2008

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Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni 1 − x Pt x silicide films

Applied physics letters, 2010-01, Vol.96 (3), p.031911-031911-3

2010

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Reversible surface functionalization of carbon nanotubes for fabrication of field-effect transistors

Applied physics letters, 2005-07, Vol.87 (4)

2005

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Highly conductive ultrathin Co films by high-power impulse magnetron sputtering

Applied physics letters, 2018-01, Vol.112 (4)

2018

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Improving the morphological stability of nickel germanide by tantalum and tungsten additions

Applied physics letters, 2018-03, Vol.112 (10)

2018

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Minimizing sputter-induced damage during deposition of WS 2 onto graphene

Applied physics letters, 2017, Vol.110 (9)

2017

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Direct assessment of solid–liquid interface noise in ion sensing using a differentialmethod

Applied physics letters, 2016, Vol.108 (15)

2016

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A two-in-one process for reliable graphene transistors processed with photolithography

Applied physics letters, 2015, Vol.107 (20)

2015

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An ion-gated bipolar amplifier for ion sensing with enhanced signal and improvednoise performance

Applied physics letters, 2014, Vol.105 (8), p.0821021

2014

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Conformal Ni-silicide formation over three-dimensional device structures

Applied physics letters, 2012-07, Vol.101 (5), p.53508

Kubart, Tomas

2012

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Characterization of Ni(Si,Ge) films formed using microwave heating

Applied physics letters, 2012, Vol.101, p.092101

2012

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Exploitation of a self-limiting process for reproducible formationof ultrathin Ni 1 − x Pt x silicide films

Applied physics letters, 2010-12, Vol.97 (25), p.252108-252108-3

2010

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Increased nucleation temperature of NiSi2 in the reaction of Ni thin films with Si1-xGex

Applied physics letters, 2002-09, Vol.81 (11), p.1978

2002

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Morphological stability and specific resistivity of sub-10 nm silicide films of Ni 1 − x Pt x on Si substrate

Applied physics letters, 2010-02, Vol.96 (7), p.071915-071915-3

2010

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Direct assessment of solid–liquid interface noise in ion sensing using a differential method

Minimizing sputter-induced damage during deposition of WS2 onto graphene

Ultra-shallow junctions formed using microwave annealing

A graphene field-effect capacitor sensor in electrolyte

An ion-gated bipolar amplifier for ion sensing with enhanced signal and improved noise performance

Morphological instability of Ag films caused by phase transition in the underlying Ta barrier layer

Percolation in random networks of heterogeneous nanotubes

Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1−xPtx on Si substrate

Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1−xPtx silicide films

A two-terminal silicon nanoribbon field-effect pH sensor

Improved electrical performance of carbon nanotube thin film transistors by utilizing composite networks

Distinguishing self-gated rectification action from ordinary diode rectification in back-gated carbon nanotube devices

Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni 1 − x Pt x silicide films

Reversible surface functionalization of carbon nanotubes for fabrication of field-effect transistors

Highly conductive ultrathin Co films by high-power impulse magnetron sputtering

Improving the morphological stability of nickel germanide by tantalum and tungsten additions

Minimizing sputter-induced damage during deposition of WS 2 onto graphene

Direct assessment of solid–liquid interface noise in ion sensing using a differentialmethod

A two-in-one process for reliable graphene transistors processed with photolithography

An ion-gated bipolar amplifier for ion sensing with enhanced signal and improvednoise performance

Conformal Ni-silicide formation over three-dimensional device structures

Characterization of Ni(Si,Ge) films formed using microwave heating

Exploitation of a self-limiting process for reproducible formationof ultrathin Ni 1 − x Pt x silicide films

Increased nucleation temperature of NiSi2 in the reaction of Ni thin films with Si1-xGex

Morphological stability and specific resistivity of sub-10 nm silicide films of Ni 1 − x Pt x on Si substrate

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