UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 92

Sortiert nach

Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

Journal of applied physics, 2015-04, Vol.117 (13)

2015

Volltextzugriff (PDF)

Correlated high-resolution x-ray diffraction, photoluminescence, and atom probe tomography analysis of continuous and discontinuous InxGa1−xN quantum wells

Applied physics letters, 2015-07, Vol.107 (2)

2015

Volltextzugriff (PDF)

Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

AIP advances, 2017-10, Vol.7 (10), p.105312-105312-7

2017

Volltextzugriff (PDF)

Log-Pile TiO2 Photonic Crystal for Light Control at Near-UV and Visible Wavelengths

Advanced materials (Weinheim), 2010-01, Vol.22 (4), p.487-491

2010

Volltextzugriff (PDF)

III-nitride photonic crystal emitters by selective photoelectrochemical etching of heterogeneous quantum well structures

Optical materials express, 2018-11, Vol.8 (11), p.3543

2018

Volltextzugriff (PDF)

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

Applied physics letters, 2010-09, Vol.97 (13), p.133507-133507-3

2010

Volltextzugriff (PDF)

The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

Applied physics letters, 2009-02, Vol.94 (8), p.081113-081113-3

2009

Volltextzugriff (PDF)

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells

Applied physics letters, 2010-04, Vol.96 (15), p.153501-153501-3

2010

Volltextzugriff (PDF)

Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers

Applied physics letters, 2018-07, Vol.113 (4)

2018

Volltextzugriff (PDF)

Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

Applied physics letters, 2007-12, Vol.91 (23)

2007

Volltextzugriff (PDF)

III-nitride core-shell nanowire arrayed solar cells

Nanotechnology, 2012-05, Vol.23 (19), p.194007-1-6

2012

Volltextzugriff (PDF)

Phase degradation in BxGa1−xN films grown at low temperature by metalorganic vapor phase epitaxy

Journal of crystal growth, 2017-04, Vol.464, p.190-196

2017

Volltextzugriff (PDF)

Spatial Mapping of Efficiency of GaN/InGaN Nanowire Array Solar Cells Using Scanning Photocurrent Microscopy

Nano letters, 2013-11, Vol.13 (11), p.5123-5128

2013

Volltextzugriff (PDF)

Ultrafast and band-selective Auger recombination in InGaN quantum wells

Applied physics letters, 2016-04, Vol.108 (14)

2016

Volltextzugriff (PDF)

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

Applied physics letters, 2011-01, Vol.98 (3), p.033506-033506-3

2011

Volltextzugriff (PDF)

Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs

Physica status solidi. A, Applications and materials science, 2014-04, Vol.211 (4), p.748-751

2014

Volltextzugriff (PDF)

Multi-colour nanowire photonic crystal laser pixels

Scientific reports, 2013-10, Vol.3 (1), p.2982-2982, Article 2982

2013

Volltextzugriff (PDF)

Influence of pH on the Quantum-Size-Controlled Photoelectrochemical Etching of Epitaxial InGaN Quantum Dots

Journal of physical chemistry. C, 2015-12, Vol.119 (50), p.28194-28198

2015

Volltextzugriff (PDF)

Photoelectrochemical etching of epitaxial InGaN thin films: self-limited kinetics and nanostructuring

Electrochimica acta, 2015-04, Vol.162 (C), p.163-168

2015

Volltextzugriff (PDF)

Improving emission uniformity and linearizing band dispersion in nanowire arrays using quasi-aperiodicity

Optical materials express, 2017-10, Vol.7 (10), p.3634

2017

Volltextzugriff (PDF)

Nonradiative energy transfer between colloidal quantum dot-phosphors and nanopillar nitride LEDs

Optics express, 2012-03, Vol.20 Suppl 2 (S2), p.A333-A339

2012

Volltextzugriff (PDF)

Deterministic Placement of Quantum-Size Controlled Quantum Dots for Seamless Top-Down Integration

ACS photonics, 2017-09, Vol.4 (9), p.2165-2170

2017

Volltextzugriff (PDF)

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

Applied physics letters, 2010-03, Vol.96 (12), p.121110-121110-3

2010

Volltextzugriff (PDF)

Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals

Journal of crystal growth, 2002-05, Vol.240 (3), p.508-512

2002

Volltextzugriff (PDF)

Energy Frontier Research Center for Solid-State Lighting Science: Exploring New Materials Architectures and Light Emission Phenomena

Journal of physical chemistry. C, 2014-06, Vol.118 (25), p.13330-13345

2014

Volltextzugriff (PDF)

1 – 25 von 92

Suche als RSS-Feed

Aktive Filter

ThemaSemiconductors

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(78)
Mit Volltextzugriff
(88)

Publikationsform

Sprache

Englisch
(90)
Japanisch
(19)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

Correlated high-resolution x-ray diffraction, photoluminescence, and atom probe tomography analysis of continuous and discontinuous InxGa1−xN quantum wells

Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

Log-Pile TiO2 Photonic Crystal for Light Control at Near-UV and Visible Wavelengths

III-nitride photonic crystal emitters by selective photoelectrochemical etching of heterogeneous quantum well structures

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells

Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers

Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

III-nitride core-shell nanowire arrayed solar cells

Phase degradation in BxGa1−xN films grown at low temperature by metalorganic vapor phase epitaxy

Spatial Mapping of Efficiency of GaN/InGaN Nanowire Array Solar Cells Using Scanning Photocurrent Microscopy

Ultrafast and band-selective Auger recombination in InGaN quantum wells

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs

Multi-colour nanowire photonic crystal laser pixels

Influence of pH on the Quantum-Size-Controlled Photoelectrochemical Etching of Epitaxial InGaN Quantum Dots

Photoelectrochemical etching of epitaxial InGaN thin films: self-limited kinetics and nanostructuring

Improving emission uniformity and linearizing band dispersion in nanowire arrays using quasi-aperiodicity

Nonradiative energy transfer between colloidal quantum dot-phosphors and nanopillar nitride LEDs

Deterministic Placement of Quantum-Size Controlled Quantum Dots for Seamless Top-Down Integration

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals

Energy Frontier Research Center for Solid-State Lighting Science: Exploring New Materials Architectures and Light Emission Phenomena

Aktive Filter

Suchergebnisse filtern