UB Paderborn / Katalog / Suche / in CDI

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2008-01, Vol.26 (1), p.281-285

2008

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Electrically active, ion implanted boron at the solubility limit in silicon

Applied physics letters, 1993-08, Vol.63 (8), p.1134-1136

1993

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Avoiding preamorphization damage in MeV heavy ion-implanted silicon

Applied physics letters, 1991-06, Vol.58 (24), p.2827-2829

1991

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Reduction of secondary defect formation in MeV B+ ion-implanted Si(100)

Applied physics letters, 1989-10, Vol.55 (18), p.1838-1840

1989

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Manufacturable Processes for \leq 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances

IEEE transactions on electron devices, 2008-05, Vol.55 (5), p.1259-1264

2008

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IEEE_Xplore

Productivity enhancement using a methodical approach to defect reduction based on synergy of process and defect metrology knowledge

Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI, 2003, p.9-16

2003

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IEEE_Xplore

Formation of ultrathin CoSi2 films using a two-step limited reaction process

Journal of materials research, 1993-12, Vol.8 (12), p.3111-3121

1993

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Nondestructive thickness determination of thin cobalt and cobalt disilicide layers on silicon substrates

Thin solid films, 1994-03, Vol.240 (1-2), p.110-113

1994

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Avoiding dislocations in ion-implanted silicon

ESSDERC '92: 22nd European Solid State Device Research conference, 1992, Vol.19 (1), p.357-362

1992

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IEEE_Xplore

O2 post deposition anneal of Al2O3 blocking dielectric for higher performance and reliability of TANOS Flash memory

2009 Proceedings of the European Solid State Device Research Conference, 2009, p.272-275

2009

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IEEE_Xplore

Laser-annealed junctions with advanced CMOS gate stacks for 32nm Node: Perspectives on device performance and manufacturability

2008 Symposium on VLSI Technology, 2008, p.186-187

2008

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IEEE_Xplore

pMOSFET With 200%25 Mobility Enhancement Induced by Multiple Stressors

IEEE electron device letters, 2006-06, Vol.27 (6), p.511-513

2006

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Thermal stability of CoSi2 on submicron polycrystalline silicon lines

Microelectronic engineering, 1992-09, Vol.19 (1-4), p.665-668

1992

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Structural and electrical characterization of Si(100) implanted with P + and Si + ions along the [100] channelling direction

Materials science & engineering. B, Solid-state materials for advanced technology, 1990-09, Vol.7 (1), p.149-165

1990

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In situ emissivity measurements to probe the phase transformations during rapid thermal processing Co silicidation

Applied physics letters, 1992-11, Vol.61 (19), p.2296-2298

1992

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Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

2007 IEEE International Electron Devices Meeting, 2007, p.955-958

2007

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IEEE_Xplore

Channeling implantation of B and P in silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-04, Vol.55 (1), p.615-619

1991

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Scalability of the Si/sub 1-x/Ge/sub x/ source/drain technology for the 45-nm technology node and beyond

Layout impact on the performance of a locally strained PMOSFET

Impact of silicidation on the excess noise behaviour of mos transistors

Dislocation formation in silicon implanted at different temperatures

Reduction of boron diffusion in silicon by 1 MeV 29Si+ irradiation

Non-destructive characterization of the uniformity of thin cobalt disilicide films by Raman microprobe measurements

Non-destructive thickness determination of thin cobalt and cobalt disilicide layers on silicon substrates

Reduction of secondary defects in MeV ion-implanted silicon by means of ion beam defect engineering

Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing

Electrically active, ion implanted boron at the solubility limit in silicon

Avoiding preamorphization damage in MeV heavy ion-implanted silicon

Reduction of secondary defect formation in MeV B+ ion-implanted Si(100)

Manufacturable Processes for \leq 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances

Productivity enhancement using a methodical approach to defect reduction based on synergy of process and defect metrology knowledge

Formation of ultrathin CoSi2 films using a two-step limited reaction process

Nondestructive thickness determination of thin cobalt and cobalt disilicide layers on silicon substrates

Avoiding dislocations in ion-implanted silicon

O2 post deposition anneal of Al2O3 blocking dielectric for higher performance and reliability of TANOS Flash memory

Laser-annealed junctions with advanced CMOS gate stacks for 32nm Node: Perspectives on device performance and manufacturability

pMOSFET With 200%25 Mobility Enhancement Induced by Multiple Stressors

Thermal stability of CoSi2 on submicron polycrystalline silicon lines

Structural and electrical characterization of Si(100) implanted with P + and Si + ions along the [100] channelling direction

In situ emissivity measurements to probe the phase transformations during rapid thermal processing Co silicidation

Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

Channeling implantation of B and P in silicon

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