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Dissipative quantum transport in silicon nanowires based on Wigner transport equation

Journal of applied physics, 2011-11, Vol.110 (9), p.093710-093710-8

Barraud, Sylvain

2011

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Gate-based high fidelity spin readout in a CMOS device

Nature nanotechnology, 2019-08, Vol.14 (8), p.737-741

2019

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Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor

Nano letters, 2014-04, Vol.14 (4), p.2094-2098

2014

Volltextzugriff (PDF)

Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

npj quantum information, 2018-02, Vol.4 (1), p.1-7, Article 6

2018

Volltextzugriff (PDF)

Low-temperature electrical characterization of junctionless transistors

Solid-state electronics, 2013-02, Vol.80, p.135-141

2013

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High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

Volltextzugriff (PDF)

Dopant-controlled single-electron pumping through a metallic island

Applied physics letters, 2016-05, Vol.108 (21)

2016

Volltextzugriff (PDF)

Large Dispersive Interaction between a CMOS Double Quantum Dot and Microwave Photons

PRX quantum, 2021-05, Vol.2 (2), p.020315, Article 020315

2021

Volltextzugriff (PDF)

The influence of Coulomb centers located in HfO2/SiO2 gate stacks on the effective electron mobility

Journal of applied physics, 2008-10, Vol.104 (7)

2008

Volltextzugriff (PDF)

Primary thermometry of a single reservoir using cyclic electron tunneling to a quantum dot

Communications physics, 2018-10, Vol.1 (1), Article 66

2018

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Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width

IEEE transactions on electron devices, 2013-02, Vol.60 (2), p.727-732

2013

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Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Applied physics letters, 2014-12, Vol.105 (26)

2014

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A silicon-based single-electron interferometer coupled to a fermionic sea

Physical review. B, 2018-01, Vol.97 (4), Article 045405

2018

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Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

Solid-state electronics, 2013-03, Vol.81, p.101-104

2013

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Quantum interference capacitor based on double-passage Landau-Zener-Stückelberg-Majorana interferometry

Physical review. B, 2019-11, Vol.100 (20), p.1, Article 205425

2019

Volltextzugriff (PDF)

Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors

Solid-state electronics, 2013-03, Vol.81, p.58-62

2013

Volltextzugriff (PDF)

Phase-coherent quantum transport in silicon nanowires based on Wigner transport equation: Comparison with the nonequilibrium-Green-function formalism

Journal of applied physics, 2009-09, Vol.106 (6), p.063714-063714-7

Barraud, Sylvain

2009

Volltextzugriff (PDF)

Effect of strain on the electron effective mobility in biaxially strained silicon inversion layers: An experimental and theoretical analysis via atomic force microscopy measurements and Kubo-Greenwood mobility calculations

Journal of applied physics, 2008-03, Vol.103 (6), p.063715-063715-9

2008

Volltextzugriff (PDF)

Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits

Physical review letters, 2018-03, Vol.120 (13), p.137702-137702, Article 137702

2018

Volltextzugriff (PDF)

Development of a CMOS Route for Electron Pumps to Be Used in Quantum Metrology

Technologies (Basel), 2016-03, Vol.4 (1), p.10

2016

Volltextzugriff (PDF)

Aptasensors based on silicon nanowire field-effect transistors for electrical detection of thrombin

Microelectronic engineering, 2024-03, Vol.286, p.112130, Article 112130

2024

Volltextzugriff (PDF)

Influence of interface traps position along channel in the low-frequency noise of junctionless nanowire transistors

Solid-state electronics, 2024-02, Vol.212, p.108835, Article 108835

2024

Volltextzugriff (PDF)

Comprehensive evaluation of gate-induced drain leakage in SOI stacked nanowire nMOSFETs operating in high-temperatures

Solid-state electronics, 2024-04, Vol.214, p.108865, Article 108865

2024

Volltextzugriff (PDF)

Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET

Nanotechnology, 2020-10, Vol.31 (41), p.415201-415201

2020

Volltextzugriff (PDF)

Interface traps density extraction through transient measurements in junctionless transistors

Solid-state electronics, 2022-08, Vol.194, p.108302, Article 108302

2022

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Dissipative quantum transport in silicon nanowires based on Wigner transport equation

Gate-based high fidelity spin readout in a CMOS device

Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor

Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

Low-temperature electrical characterization of junctionless transistors

High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs

Dopant-controlled single-electron pumping through a metallic island

Large Dispersive Interaction between a CMOS Double Quantum Dot and Microwave Photons

The influence of Coulomb centers located in HfO2/SiO2 gate stacks on the effective electron mobility

Primary thermometry of a single reservoir using cyclic electron tunneling to a quantum dot

Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width

Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

A silicon-based single-electron interferometer coupled to a fermionic sea

Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

Quantum interference capacitor based on double-passage Landau-Zener-Stückelberg-Majorana interferometry

Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors

Phase-coherent quantum transport in silicon nanowires based on Wigner transport equation: Comparison with the nonequilibrium-Green-function formalism

Effect of strain on the electron effective mobility in biaxially strained silicon inversion layers: An experimental and theoretical analysis via atomic force microscopy measurements and Kubo-Greenwood mobility calculations

Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits

Development of a CMOS Route for Electron Pumps to Be Used in Quantum Metrology

Aptasensors based on silicon nanowire field-effect transistors for electrical detection of thrombin

Influence of interface traps position along channel in the low-frequency noise of junctionless nanowire transistors

Comprehensive evaluation of gate-induced drain leakage in SOI stacked nanowire nMOSFETs operating in high-temperatures

Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET

Interface traps density extraction through transient measurements in junctionless transistors

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