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Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3152-3158

2007

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IEEE_Xplore

Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

IEEE electron device letters, 2014-03, Vol.35 (3), p.327-329

2014

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IEEE_Xplore

Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.977-983

2017

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IEEE_Xplore

Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.478-482

2008

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IEEE_Xplore

Mechanism of hot electron electroluminescence in GaN-based transistors

Journal of physics. D, Applied physics, 2016-11, Vol.49 (43), p.435101

2016

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Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

IEEE transactions on electron devices, 2009-01, Vol.56 (1), p.13-19

2009

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IEEE_Xplore

Transport behavior of holes in boron delta-doped diamond structures

Journal of applied physics, 2013-01, Vol.113 (3), p.033702

2013

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Investigation of the GaN-on-GaAs interface for vertical power device applications

Journal of applied physics, 2014-07, Vol.116 (1)

2014

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Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs

IEEE transactions on electron devices, 2018-05, Vol.65 (5), p.1838-1842

2018

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Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

IEEE electron device letters, 2015-08, Vol.36 (8), p.826-828

2015

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IEEE_Xplore

Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability

Physica status solidi. A, Applications and materials science, 2012-12, Vol.209 (12), p.2646-2652

2012

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Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

IEEE transactions on electron devices, 2006-10, Vol.53 (10), p.2438-2447

2006

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IEEE_Xplore

Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements

Applied physics letters, 2013-07, Vol.103 (4)

2013

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A physically based compact model of partially depleted SOI MOSFETs for analog circuit simulation

IEEE journal of solid-state circuits, 2001-01, Vol.36 (1), p.110-121

2001

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IEEE_Xplore

Silicon Carbide Vertical JFET Operating at High Temperature

Materials science forum, 2009-01, Vol.600-603, p.1063-1066

2009

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Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

IEEE electron device letters, 2009-02, Vol.30 (2), p.103-106

2009

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IEEE_Xplore

Surface Induced Instabilities in 4H-SiC Microwave MESFETs

Materials science forum, 2000-05, Vol.338-342, p.1251-1254

2000

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Quality and reliability of wet and dry oxides on n-type 4H-SiC

Materials science & engineering. B, Solid-state materials for advanced technology, 1999, Vol.61, p.460-463

1999

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Optical Characterization of Lattice Damage and Recovery in Ion-Implanted and Pulsed Excimer Laser Irradiated 4H-SiC

Materials science forum, 2000-05, Vol.338-342, p.655-658

2000

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Surface Morphology Improvement of SiC Epitaxy by Sacrificial Oxidation

Materials science forum, 1998-02, Vol.264-268, p.367-370

1998

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Impact of self-heating and thermal coupling on analog circuits in SOI CMOS

IEEE journal of solid-state circuits, 1998-07, Vol.33 (7), p.1037-1046

1998

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IEEE_Xplore

Integrated Raman - IR Thermography on AlGaN/GaN Transistors

2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.1339-1342

2006

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IEEE_Xplore

The effect of body contact series resistance on SOI CMOS amplifier stages

IEEE transactions on electron devices, 1997-12, Vol.44 (12), p.2290-2294

1997

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IEEE_Xplore

A multibit ΣΔ modulator in floating-body SOS/SOI CMOS for extreme radiation environments

IEEE journal of solid-state circuits, 1999-07, Vol.34 (7), p.937-948

1999

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The RNA-Binding Protein Musashi1 Affects Medulloblastoma Growth via a Network of Cancer-Related Genes and Is an Indicator of Poor Prognosis

The American journal of pathology, 2012-11, Vol.181 (5), p.1762-1772

2012

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Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs

Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy

Mechanism of hot electron electroluminescence in GaN-based transistors

Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

Transport behavior of holes in boron delta-doped diamond structures

Investigation of the GaN-on-GaAs interface for vertical power device applications

Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs

Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability

Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements

A physically based compact model of partially depleted SOI MOSFETs for analog circuit simulation

Silicon Carbide Vertical JFET Operating at High Temperature

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

Surface Induced Instabilities in 4H-SiC Microwave MESFETs

Quality and reliability of wet and dry oxides on n-type 4H-SiC

Optical Characterization of Lattice Damage and Recovery in Ion-Implanted and Pulsed Excimer Laser Irradiated 4H-SiC

Surface Morphology Improvement of SiC Epitaxy by Sacrificial Oxidation

Impact of self-heating and thermal coupling on analog circuits in SOI CMOS

Integrated Raman - IR Thermography on AlGaN/GaN Transistors

The effect of body contact series resistance on SOI CMOS amplifier stages

A multibit ΣΔ modulator in floating-body SOS/SOI CMOS for extreme radiation environments

The RNA-Binding Protein Musashi1 Affects Medulloblastoma Growth via a Network of Cancer-Related Genes and Is an Indicator of Poor Prognosis

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