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Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon-Carbon Source/Drain Regions

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2910-2917

2007

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Sub-400 °C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1640-1648

2013

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An Improved Methodology for Accurate Extraction of Ultra-Low Specific Contact Resistivity of Alloyed Contacts Using Nanoscale Transmission Line Method

IEEE electron device letters, 2018-06, Vol.39 (6), p.803-806

2018

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Foreword Special Issue on Transistors With Steep Subthreshold Swing for Low-Power Electronics

IEEE journal of the Electron Devices Society, 2015-05, Vol.3 (3), p.86-87

2015

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Strained -MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance

IEEE transactions on electron devices, 2008-03, Vol.55 (3), p.850-857

2008

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Novel Nickel Silicide Contact Technology Using Selenium Segregation for SOI N-FETs With Silicon-Carbon Source/Drain Stressors

IEEE electron device letters, 2008-08, Vol.29 (8), p.841-844

2008

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Physical and Electrical Characterization of Metal-Insulator-Metal Capacitors With [Formula Omitted] and [Formula Omitted] Laminated Dielectrics for Analog Circuit Applications

IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2683

2009

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Cointegration of In Situ Doped Silicon-Carbon Source and Silicon-Carbon I-Region in P-Channel Silicon Nanowire Impact-Ionization Transistor

IEEE electron device letters, 2008-07, Vol.29 (7), p.731-733

2008

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An Expandable \hbox Liner Stressor for N-Channel FinFETs

IEEE transactions on electron devices, 2014-06, Vol.61 (6), p.1963-1971

2014

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The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs

2017 Symposium on VLSI Technology, 2017, p.T198-T199

2017

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Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1−x As graded layer grown by solid-source molecular beam epitaxy

Journal of physics. D, Applied physics, 2012-12, Vol.45 (50)

2012

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P2S5/(NH4)2Sx-Based Sulfur Monolayer Doping for Source/Drain Extensions in n-Channel InGaAs FETs

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2767-2773

2014

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A fast measurement technique of MOSFET Id-Vg characteristics

IEEE electron device letters, 2006, Vol.27 (1), p.55-57

2006

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High Performance GeSn Photodiode on a 200 mm Ge-on-insulator Photonics Platform for Advanced Optoelectronic Integration with Ge CMOS Operating at 2 μm Band

2019 Symposium on VLSI Technology, 2019, p.T176-T177

2019

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Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate

Journal of applied physics, 2013-01, Vol.113 (4)

2013

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Record low specific contact resistivity (1.2×10−9 Ω-cm2) for P-type semiconductors: Incorporation of Sn into Ge and in-Situ Ga doping

2017 Symposium on VLSI Technology, 2017, p.T218-T219

2017

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Investigation of Pd–InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal–oxide–semiconductor field-effect transistors

Solid-state electronics, 2013-07, Vol.85, p.36-42

2013

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Modeling the Negative Quadratic VCC of \hbox in MIM Capacitor

IEEE electron device letters, 2011-12, Vol.32 (12), p.1671-1673

2011

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Nonvolatile Flash memory device using Ge nanocrystals embedded in HfAlO high-κ tunneling and control oxides: Device fabrication and electrical performance

IEEE transactions on electron devices, 2004-11, Vol.51 (11), p.1840-1848

2004

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hbox(\hbox\hbox) Ohmic Contact Formation on N-Type \hbox\hbox Using Selenium or Sulfur Implant and Segregation

IEEE transactions on electron devices, 2013-02, Vol.60 (2), p.746-752

2013

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Band offsets between SiO2 and phase change materials in the (GeTe)x(Sb2Te3)1−x pseudobinary system

Applied physics letters, 2011-03, Vol.98 (13)

2011

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Advanced channel and contact technologies for future CMOS devices

Proceedings of Technical Program of 2012 VLSI Technology, System and Application, 2012, p.1-2

Yee-Chia Yeo

2012

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Germanium-based transistors for future high performance and low power logic applications

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.2.4.1-2.4.4

2015

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Strain-Transfer Structure Beneath the Transistor Channel for Increasing the Strain Effects of Lattice-Mismatched Source and Drain Stressors

MRS proceedings, 2007, Vol.995, Article 0995-G01-03

2007

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Silane and Ammonia Surface Passivation Technology for High-Mobility \hbox\hbox\hbox MOSFETs

IEEE transactions on electron devices, 2010-05, Vol.57 (5), p.973-979

2010

Volltextzugriff (PDF)

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Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon-Carbon Source/Drain Regions

Sub-400 °C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS

An Improved Methodology for Accurate Extraction of Ultra-Low Specific Contact Resistivity of Alloyed Contacts Using Nanoscale Transmission Line Method

Foreword Special Issue on Transistors With Steep Subthreshold Swing for Low-Power Electronics

Strained -MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance

Novel Nickel Silicide Contact Technology Using Selenium Segregation for SOI N-FETs With Silicon-Carbon Source/Drain Stressors

Physical and Electrical Characterization of Metal-Insulator-Metal Capacitors With [Formula Omitted] and [Formula Omitted] Laminated Dielectrics for Analog Circuit Applications

Cointegration of In Situ Doped Silicon-Carbon Source and Silicon-Carbon I-Region in P-Channel Silicon Nanowire Impact-Ionization Transistor

An Expandable \hbox Liner Stressor for N-Channel FinFETs

The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs

Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1−x As graded layer grown by solid-source molecular beam epitaxy

P2S5/(NH4)2Sx-Based Sulfur Monolayer Doping for Source/Drain Extensions in n-Channel InGaAs FETs

A fast measurement technique of MOSFET Id-Vg characteristics

High Performance GeSn Photodiode on a 200 mm Ge-on-insulator Photonics Platform for Advanced Optoelectronic Integration with Ge CMOS Operating at 2 μm Band

Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate

Record low specific contact resistivity (1.2×10−9 Ω-cm2) for P-type semiconductors: Incorporation of Sn into Ge and in-Situ Ga doping

Investigation of Pd–InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal–oxide–semiconductor field-effect transistors

Modeling the Negative Quadratic VCC of \hbox in MIM Capacitor

Nonvolatile Flash memory device using Ge nanocrystals embedded in HfAlO high-κ tunneling and control oxides: Device fabrication and electrical performance

hbox(\hbox\hbox) Ohmic Contact Formation on N-Type \hbox\hbox Using Selenium or Sulfur Implant and Segregation

Band offsets between SiO2 and phase change materials in the (GeTe)x(Sb2Te3)1−x pseudobinary system

Advanced channel and contact technologies for future CMOS devices

Germanium-based transistors for future high performance and low power logic applications

Strain-Transfer Structure Beneath the Transistor Channel for Increasing the Strain Effects of Lattice-Mismatched Source and Drain Stressors

Silane and Ammonia Surface Passivation Technology for High-Mobility \hbox\hbox\hbox MOSFETs

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