UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Formation of hexagonal phase 9R-Si in SiO2/Si system upon Kr+ ion implantation

Vestnik Moskovskogo universiteta. Serii͡a︡ III: Fizika, astronomii͡a, 2023-06 (3_2023), p.2330501-2330501–7

2023

Volltextzugriff (PDF)

Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by [Si.sup.+] Ion Implantation

Semiconductors (Woodbury, N.Y.), 2018-07, Vol.52 (7), p.843

2018

Volltextzugriff (PDF)

Electron spectroscopy investigations of semiconductor nanocrystals formed by various technologies

International journal of nanoparticles, 2008, Vol.1 (1), p.14

2008

Volltextzugriff (PDF)

Formation of fluorine-containing defects and nanocrystals in Si[O.sub.2] upon implantation with fluorine, silicon, and germanium ions: numerical simulation and photoluminescence spectroscopy

Physics of the solid state, 2015-11, p.2164

2015

Volltextzugriff (PDF)

Change of immitance during electroforming and resistive switching in the metal--insulator--metal memristive structures based on Si[O.sub.x]

Technical physics, 2016-05, p.745

2016

Volltextzugriff (PDF)

Composition and luminescence of Si and SiO 2 layers co-implanted with Ga and N ions

International journal of nanotechnology., 2017, Vol.14 (7/8), p.637

2017

Volltextzugriff (PDF)

Annealing-induced evolution of the structural and morphological properties of a multilayer nanoperiodic Si[O.sub.x]/Zr[O.sub.2] system containing Si nanoclusters

Semiconductors (Woodbury, N.Y.), 2014-01, Vol.48 (1), p.42

2014

Volltextzugriff (PDF)

Thermal evolution of the morphology, structure, and optical properties of multilayer nanoperiodic systems produced by the vacuum evaporation of SiO and Si[O.sub.2]

Semiconductors (Woodbury, N.Y.), 2013-04, Vol.47 (4), p.481

2013

Volltextzugriff (PDF)

Effect of ion doping on the dislocation-related photoluminescence in [Si.sup.+]-implanted silicon

Semiconductors (Woodbury, N.Y.), 2014-02, Vol.48 (2), p.199

2014

Volltextzugriff (PDF)

Investigation of electronic structure of Si nanocrystals and their interface with host matrix in P-doped SiO 2:Si and Al 2O 3:Si nanocomposites

Thin solid films, 2006, Vol.515 (2), p.591-595

2006

Volltextzugriff (PDF)

Annealing-induced evolution of optical properties of the multilayered nanoperiodic Si[O.sub.x]/Zr[O.sub.2] system containing Si nanoclusters

Semiconductors (Woodbury, N.Y.), 2011-06, Vol.45 (6), p.731

2011

Volltextzugriff (PDF)

Formation and "white" photoluminescence of nanoclusters in Si[O.sub.x] films implanted with carbon Ions

Semiconductors (Woodbury, N.Y.), 2010-11, Vol.44 (11), p.1450

2010

Volltextzugriff (PDF)

Effect of carbon implantation on visible luminescence and composition of Si-implanted SiO 2 layers

Surface & coatings technology, 2009, Vol.203 (17), p.2658-2663

2009

Volltextzugriff (PDF)

Peculiarities of the formation and properties of light-emitting structures based on ion-synthesized silicon nanocrystals in Si[O.sub.2] and [Al.sub.2][O.sub.3] matrices

Physics of the solid state, 2012-02, Vol.54 (2), p.368

2012

Volltextzugriff (PDF)

Critical-field slope reduction and upward curvature of the phase-transition lines of thin disordered superconducting YBa 2 Cu 3 O 7 − x films in strong magnetic fields

Physica. C, Superconductivity, 2020-01, Vol.568, p.1353581, Article 1353581

2020

Volltextzugriff (PDF)

Implantation of P ions in SiO 2 layers with embedded Si nanocrystals

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004, Vol.222 (3), p.497-504

2004

Volltextzugriff (PDF)

The optimization of photoluminescence properties of ion-implantation-produced nanostructures on the basis of Si inclusions in a SiO 2 matrix

Surface & coatings technology, 2002, Vol.158, p.717-719

2002

Volltextzugriff (PDF)

The influence of the annealing conditions on the photoluminescence of ion-implanted SiO 2:Si nanosystem at additional phosphorus implantation

Physica. E, Low-dimensional systems & nanostructures, 2003, Vol.16 (3), p.410-413

2003

Volltextzugriff (PDF)

The influence of phosphorus and hydrogen ion implantation on the photoluminescence of SiO 2 with Si nanoinclusions

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001, Vol.174 (1), p.123-129

2001

Volltextzugriff (PDF)

Chapter 2 - Resistive switching in metal-oxide memristive materials and devices

Metal Oxides for Non-volatile Memory, 2022, p.33-78

2022

Volltextzugriff (PDF)

Chapter 4 - Technology and neuromorphic functionality of magnetron-sputtered memristive devices

Metal Oxides for Non-volatile Memory, 2022, p.109-131

2022

Volltextzugriff (PDF)

Silicon nanocrystals in SiO 2 matrix obtained by ion implantation under cyclic dose accumulation

Physica. E, Low-dimensional systems & nanostructures, 2007, Vol.38 (1), p.16-20

2007

Volltextzugriff (PDF)

Long-Range Effect of Ion Irradiation on the System of Defects in Indium Phosphide

Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 1993-01, Vol.103-105, p.57-60

1993

Volltextzugriff (PDF)

Dielectric Matrix Influence on the Photoluminescence Properties of Silicon Nanocrystals

3rd IEEE International Conference on Group IV Photonics, 2006, 2006, p.225-227

2006

Volltextzugriff (PDF)

XANES investigations of Si nanocrystals obtained by implantation of silicon in SiO/sub 2/ films

2005 International Vacuum Nanoelectronics Conference, 2005, p.188-189

2005

Volltextzugriff (PDF)

1 – 25 von 26

Suche als RSS-Feed

Aktive Filter

ThemaScience & Technology

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(22)
Mit Volltextzugriff
(19)

Publikationsform

Sprache

Englisch
(26)

Erscheinungsjahr

n.n

Thema

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Formation of hexagonal phase 9R-Si in SiO2/Si system upon Kr+ ion implantation

Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by [Si.sup.+] Ion Implantation

Electron spectroscopy investigations of semiconductor nanocrystals formed by various technologies

Formation of fluorine-containing defects and nanocrystals in Si[O.sub.2] upon implantation with fluorine, silicon, and germanium ions: numerical simulation and photoluminescence spectroscopy

Change of immitance during electroforming and resistive switching in the metal--insulator--metal memristive structures based on Si[O.sub.x]

Composition and luminescence of Si and SiO 2 layers co-implanted with Ga and N ions

Annealing-induced evolution of the structural and morphological properties of a multilayer nanoperiodic Si[O.sub.x]/Zr[O.sub.2] system containing Si nanoclusters

Thermal evolution of the morphology, structure, and optical properties of multilayer nanoperiodic systems produced by the vacuum evaporation of SiO and Si[O.sub.2]

Effect of ion doping on the dislocation-related photoluminescence in [Si.sup.+]-implanted silicon

Investigation of electronic structure of Si nanocrystals and their interface with host matrix in P-doped SiO 2:Si and Al 2O 3:Si nanocomposites

Annealing-induced evolution of optical properties of the multilayered nanoperiodic Si[O.sub.x]/Zr[O.sub.2] system containing Si nanoclusters

Formation and "white" photoluminescence of nanoclusters in Si[O.sub.x] films implanted with carbon Ions

Effect of carbon implantation on visible luminescence and composition of Si-implanted SiO 2 layers

Peculiarities of the formation and properties of light-emitting structures based on ion-synthesized silicon nanocrystals in Si[O.sub.2] and [Al.sub.2][O.sub.3] matrices

Critical-field slope reduction and upward curvature of the phase-transition lines of thin disordered superconducting YBa 2 Cu 3 O 7 − x films in strong magnetic fields

Implantation of P ions in SiO 2 layers with embedded Si nanocrystals

The optimization of photoluminescence properties of ion-implantation-produced nanostructures on the basis of Si inclusions in a SiO 2 matrix

The influence of the annealing conditions on the photoluminescence of ion-implanted SiO 2:Si nanosystem at additional phosphorus implantation

The influence of phosphorus and hydrogen ion implantation on the photoluminescence of SiO 2 with Si nanoinclusions

Chapter 2 - Resistive switching in metal-oxide memristive materials and devices

Chapter 4 - Technology and neuromorphic functionality of magnetron-sputtered memristive devices

Silicon nanocrystals in SiO 2 matrix obtained by ion implantation under cyclic dose accumulation

Long-Range Effect of Ion Irradiation on the System of Defects in Indium Phosphide

Dielectric Matrix Influence on the Photoluminescence Properties of Silicon Nanocrystals

XANES investigations of Si nanocrystals obtained by implantation of silicon in SiO/sub 2/ films

Aktive Filter

Suchergebnisse filtern