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Selective observation of transverse optical phonons of Au modes to evaluate free charge carrier parameters in β-Ga2O3 substrate and homoepitaxial film

Applied physics letters, 2021-06, Vol.118 (25)

2021

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Prospects for β-Ga 2 O 3 : now and into the future

Applied physics express, 2024-09, Vol.17 (9), p.90101

Sasaki, Kohei

2024

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Effect of N343 glycosylation and N501Y mutation on the SARS-CoV-2 spike protein: Modeling and MD Simulations

AIP Conference Proceedings, 2022, Vol.2611 (1)

2022

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Influence of Carbon Deposition on the Current Distribution in an Anode-Supported Planar Solid Oxide Fuel Cell In-Situ Assessed by Segmented Electrodes

ECS transactions, 2019-07, Vol.91 (1), p.549-554

2019

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1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2

Applied physics letters, 2018-11, Vol.113 (20)

2018

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Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors

Applied physics letters, 2018-09, Vol.113 (12)

2018

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hbox \hbox Schottky Barrier Diodes Fabricated by Using Single-Crystal \beta- \hbox \hbox (010) Substrates

IEEE electron device letters, 2013-04, Vol.34 (4), p.493-495

2013

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Evaluation of an In vitro Approach to the Prediction of In vivo Effects on Multidrug Resistance in Human Hepatoma Cells

Journal of carcinogenesis & mutagenesis, 2018, Vol.9 (2)

2018

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Lattice misorientation at domain boundaries in β‐Ga 2 O 3 single‐crystal substrates observed via synchrotron radiation X‐ray diffraction imaging and X‐ray reticulography

Journal of the American Ceramic Society, 2023-09, Vol.106 (9), p.5487-5500

2023

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Lattice misorientation at domain boundaries in β‐Ga2O3 single‐crystal substrates observed via synchrotron radiation X‐ray diffraction imaging and X‐ray reticulography

Journal of the American Ceramic Society, 2023-09, Vol.106 (9), p.5487-5500

2023

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Recent progress of Ga 2 O 3 power technology: large-area devices, packaging and applications

Japanese Journal of Applied Physics, 2023-06, Vol.62 (SF), p.SF0801

2023

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Investigation of high speed β-Ga 2 O 3 growth by solid-source trihalide vapor phase epitaxy

Japanese Journal of Applied Physics, 2023-06, Vol.62 (SF), p.SF1021

2023

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Cover Image, Volume 120, Number 7, July 2023

Biotechnology and bioengineering, 2023-07, Vol.120 (7), p.i-i

2023

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Identification of dislocation responsible for leakage current in halide vapor phase epitaxial (001) β-Ga 2 O 3 Schottky barrier diodes investigated via ultrahigh-sensitive emission microscopy and synchrotron X-ray topography

Applied physics express, 2022-11, Vol.15 (11), p.111001

2022

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2.5 kV Vertical Ga 2 O 3 Schottky Rectifier With Graded Junction Termination Extension

IEEE electron device letters, 2023-02, Vol.44 (2), p.221-224

2023

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Packaged $\beta$-Ga 2 O 3 Trench MOS Schottky Diode With Nearly Ideal Junction Properties

IEEE transactions on power electronics, 2022-04, Vol.37 (4), p.3737-3742

2022

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Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

Applied physics express, 2012-03, Vol.5 (3), p.35502

2012

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Etch pit formation on β-Ga2O3 by molten KOH+NaOH and hot H3PO4 and their correlation with dislocations

Journal of alloys and compounds, 2022-07, Vol.910, p.164788, Article 164788

2022

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Packaged [Formula Omitted]-Ga2O3 Trench MOS Schottky Diode With Nearly Ideal Junction Properties

IEEE transactions on power electronics, 2022-01, Vol.37 (4), p.3737

2022

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Hypervitaminosis A Contributes to Kidney Injury Through Excessive Endoplasmic Reticulum Stress in CKD: PO2483

Journal of the American Society of Nephrology, 2021-10, Vol.32 (10S), p.756-757

2021

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Development of β-Ga2O3 MOSSBD Featuring Ampere-Class Forward Current and Medium Breakdown Voltage

Denki Gakkai ronbunshi. C, Erekutoronikusu, joho kogaku, shisutemu, 2024-03, Vol.144 (3), p.234-239

2024

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SYNTHESIS OF p-CHLOROAZACALIX[5]ARENE PENTAMETHYL ETHER: RING SIZE-DEPENDENT DEPROTECTION OF N-BENZYL GROUPS

Heterocycles, 2012, Vol.86 (1), p.159

2012

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Laser assisted synthesis of WS 2 nanorods by pulsed laser ablation in liquid environment

International journal of modern physics. B, Condensed matter physics, statistical physics, applied physics, 2021-06, Vol.35 (14n16), p.2140007

2021

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Large conduction band offset at SiO2/β-Ga2O3 heterojunction determined by X-ray photoelectron spectroscopy

physica status solidi (b), 2016-04, Vol.253 (4), p.623-625

2016

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Nitrogen-doped β-Ga 2 O 3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm 2 V −1 s −1

Applied physics express, 2023-03, Vol.16 (3), p.36503

2023

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Selective observation of transverse optical phonons of Au modes to evaluate free charge carrier parameters in β-Ga2O3 substrate and homoepitaxial film

Prospects for β-Ga 2 O 3 : now and into the future

Effect of N343 glycosylation and N501Y mutation on the SARS-CoV-2 spike protein: Modeling and MD Simulations

Influence of Carbon Deposition on the Current Distribution in an Anode-Supported Planar Solid Oxide Fuel Cell In-Situ Assessed by Segmented Electrodes

1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2

Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors

hbox \hbox Schottky Barrier Diodes Fabricated by Using Single-Crystal \beta- \hbox \hbox (010) Substrates

Evaluation of an In vitro Approach to the Prediction of In vivo Effects on Multidrug Resistance in Human Hepatoma Cells

Lattice misorientation at domain boundaries in β‐Ga 2 O 3 single‐crystal substrates observed via synchrotron radiation X‐ray diffraction imaging and X‐ray reticulography

Lattice misorientation at domain boundaries in β‐Ga2O3 single‐crystal substrates observed via synchrotron radiation X‐ray diffraction imaging and X‐ray reticulography

Recent progress of Ga 2 O 3 power technology: large-area devices, packaging and applications

Investigation of high speed β-Ga 2 O 3 growth by solid-source trihalide vapor phase epitaxy

Cover Image, Volume 120, Number 7, July 2023

Identification of dislocation responsible for leakage current in halide vapor phase epitaxial (001) β-Ga 2 O 3 Schottky barrier diodes investigated via ultrahigh-sensitive emission microscopy and synchrotron X-ray topography

2.5 kV Vertical Ga 2 O 3 Schottky Rectifier With Graded Junction Termination Extension

Packaged $\beta$-Ga 2 O 3 Trench MOS Schottky Diode With Nearly Ideal Junction Properties

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

Etch pit formation on β-Ga2O3 by molten KOH+NaOH and hot H3PO4 and their correlation with dislocations

Packaged [Formula Omitted]-Ga2O3 Trench MOS Schottky Diode With Nearly Ideal Junction Properties

Hypervitaminosis A Contributes to Kidney Injury Through Excessive Endoplasmic Reticulum Stress in CKD: PO2483

Development of β-Ga2O3 MOSSBD Featuring Ampere-Class Forward Current and Medium Breakdown Voltage

SYNTHESIS OF p-CHLOROAZACALIX[5]ARENE PENTAMETHYL ETHER: RING SIZE-DEPENDENT DEPROTECTION OF N-BENZYL GROUPS

Laser assisted synthesis of WS 2 nanorods by pulsed laser ablation in liquid environment

Large conduction band offset at SiO2/β-Ga2O3 heterojunction determined by X-ray photoelectron spectroscopy

Nitrogen-doped β-Ga 2 O 3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm 2 V −1 s −1

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