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Three-Dimensional Observation of Edge-Roughness on Poly-Si/TiN Stacked Gate Using Three-Dimensional STEM

Microscopy and microanalysis, 2009-07, Vol.15 (S2), p.634-635

2009

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Proposal of Single Metal/Dual High-[Formula Omitted] Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

IEEE transactions on electron devices, 2009-01, Vol.56 (1), p.85-92

2009

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Depth and lateral resolution of laser-assisted atom probe microscopyof silicon revealed by isotopic heterostructures

Journal of applied physics, 2011-02, Vol.109 (3), p.036102-036102-3

2011

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Positron annihilation in SiO2/Si structure at low temperature

Journal of applied physics, 1995-09, Vol.78 (5), p.3269-3273

1995

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Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- [Formula Omitted] CMOSFETs

IEEE electron device letters, 2009-05, Vol.30 (5), p.466

2009

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Ultralow-Thermal-Budget CMOS Process Using Flash-Lamp Annealing for 45 nm Metal/High- [Formula Omitted] FETs

IEEE transactions on electron devices, 2008-04, Vol.55 (4), p.1042-1049

2008

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Minimization of threshold voltage variation to AVT=1.3mVµm in bulk high-k/metal gated devices by dopant-diffusion control using integrated FSP-FLA technology

2010 Symposium on VLSI Technology, 2010, p.71-72

2010

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The fabrication of low leakage junction with ultra shallow profile by the combination annealing of 10-ms low power and 2-ms high power FLA

2009 Symposium on VLSI Technology, 2009, p.162-163

2009

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IEEE_Xplore

Direct observation of fluctuations in both the number and individual carrier capture rate of interface traps in small gate-area MOSFETs

2009 Proceedings of the European Solid State Device Research Conference, 2009, p.387-390

2009

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IEEE_Xplore

Physical understanding of the reliability improvement of dual high-k CMOSFETs with the fifth element incorporation into HfSiON gate dielectrics

2008 Symposium on VLSI Technology, 2008, p.66-67

2008

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IEEE_Xplore

Improvement of hardness of MOS capacitors to electron-beam irradiation and hot-electron injection by ultradry oxidation of silicon

IEEE electron device letters, 1989-01, Vol.10 (1), p.27-29

1989

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IEEE_Xplore

Effects of minute impurities (H, OH, F) on SiO/sub 2//Si interface as investigated by nuclear resonant reaction and electron spin resonance

IEEE transactions on electron devices, 1990-07, Vol.37 (7), p.1635-1642

1990

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IEEE_Xplore

Hot-electron damage-resistant Si-gate submicrometer MOSFETs with a fluorinated oxide

IEEE transactions on electron devices, 1989-11, Vol.36 (11), p.2604

1989

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IEEE_Xplore

VIB-6 Hall effect analysis of charge transport in silicon dioxide-silicon nitride double layers

IEEE transactions on electron devices, 1987-11, Vol.34 (11), p.2386-2386

1987

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IEEE_Xplore

Improved FET characteristics by laminate design optimization of metal gates - Guidelines for optimizing metal gate stack structure

2008 Symposium on VLSI Technology, 2008, p.48-49

2008

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IEEE_Xplore

An SOI-Based 7.5/spl mu/m-Thick 0.15x0.15mm2 RFID Chip

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers, 2006, p.1191-1200

2006

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IEEE_Xplore

Disturbance attenuation and H({infinity}) control of repulsive type magnetic bearing

IEEE transactions on magnetics, 1997-09, Vol.33 (5), p.4233-4235

1997

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Compact Modeling of Source-Side Injection Programming for 9Onm-Node AG-AND Flash Memory

2005 International Conference On Simulation of Semiconductor Processes and Devices, 2005, p.123-126

2005

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IEEE_Xplore

Disturbance attenuation and H/sup /spl infin// control of repulsive type magnetic bearing

IEEE transactions on magnetics, 1997-09, Vol.33 (5), p.4233-4235

1997

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IEEE_Xplore

Disturbance attenuation and H/sup ∞/ control of repulsive type magnetic bearing

IEEE transactions on magnetics, 1997-09, Vol.33 (5), p.4233-4235

1997

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Uniform ultra-thin Pb(Zr,Ti)O3 films formed by metal-organic chemical vapor deposition and their electrical characteristics

Japanese journal of applied physics, 1994, Vol.33 (9B), p.5143-5146

1994

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Reduction of current leakage in chemical-vapor deposited Ta 2 O 5 thin-films by oxygen-radical annealing [DRAM dielectric]

IEEE electron device letters, 1996-09, Vol.17 (9), p.431-433

1996

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Reduction of current leakage in chemical-vapor deposited Ta(2)O(5) thin-films by oxygen-radical annealing DRAMdielectric

IEEE electron device letters, 1996-09, Vol.17 (9), p.431-433

1996

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Optimization of conditions of Ta2O5/Rugged Si capacitor process applied to high-density DRAMs using sub-0.2μm process

1999

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Oxidized Ta2O5/Si3N4 dielectric films on poly-crystalline Si for dRAM's

IEEE transactions on electron devices, 1989, Vol.36 (2), p.328-332

1989

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Three-Dimensional Observation of Edge-Roughness on Poly-Si/TiN Stacked Gate Using Three-Dimensional STEM

Proposal of Single Metal/Dual High-[Formula Omitted] Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

Depth and lateral resolution of laser-assisted atom probe microscopyof silicon revealed by isotopic heterostructures

Positron annihilation in SiO2/Si structure at low temperature

Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- [Formula Omitted] CMOSFETs

Ultralow-Thermal-Budget CMOS Process Using Flash-Lamp Annealing for 45 nm Metal/High- [Formula Omitted] FETs

Minimization of threshold voltage variation to AVT=1.3mVµm in bulk high-k/metal gated devices by dopant-diffusion control using integrated FSP-FLA technology

The fabrication of low leakage junction with ultra shallow profile by the combination annealing of 10-ms low power and 2-ms high power FLA

Direct observation of fluctuations in both the number and individual carrier capture rate of interface traps in small gate-area MOSFETs

Physical understanding of the reliability improvement of dual high-k CMOSFETs with the fifth element incorporation into HfSiON gate dielectrics

Improvement of hardness of MOS capacitors to electron-beam irradiation and hot-electron injection by ultradry oxidation of silicon

Effects of minute impurities (H, OH, F) on SiO/sub 2//Si interface as investigated by nuclear resonant reaction and electron spin resonance

Hot-electron damage-resistant Si-gate submicrometer MOSFETs with a fluorinated oxide

VIB-6 Hall effect analysis of charge transport in silicon dioxide-silicon nitride double layers

Improved FET characteristics by laminate design optimization of metal gates - Guidelines for optimizing metal gate stack structure

An SOI-Based 7.5/spl mu/m-Thick 0.15x0.15mm2 RFID Chip

Disturbance attenuation and H({infinity}) control of repulsive type magnetic bearing

Compact Modeling of Source-Side Injection Programming for 9Onm-Node AG-AND Flash Memory

Disturbance attenuation and H/sup /spl infin// control of repulsive type magnetic bearing

Disturbance attenuation and H/sup ∞/ control of repulsive type magnetic bearing

Uniform ultra-thin Pb(Zr,Ti)O3 films formed by metal-organic chemical vapor deposition and their electrical characteristics

Reduction of current leakage in chemical-vapor deposited Ta 2 O 5 thin-films by oxygen-radical annealing [DRAM dielectric]

Reduction of current leakage in chemical-vapor deposited Ta(2)O(5) thin-films by oxygen-radical annealing DRAMdielectric

Optimization of conditions of Ta2O5/Rugged Si capacitor process applied to high-density DRAMs using sub-0.2μm process

Oxidized Ta2O5/Si3N4 dielectric films on poly-crystalline Si for dRAM's

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