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One order of magnitude faster phase change at reduced power in Ti-Sb-Te

Nature communications, 2014-07, Vol.5 (1), p.4086-4086, Article 4086

2014

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Correction: 12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Nanoscale, 2021-06, Vol.13 (23), p.168-169

2021

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Atomic-Scale Observation of Carbon Distribution in High-Performance Carbon-Doped Ge 2 Sb 2 Te 5 and Its Influence on Crystallization Behavior

Journal of physical chemistry. C, 2019-05, Vol.123 (21), p.13377-13384

2019

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Study on the phase change behavior of nitrogen doped Bi^sub 2^Te^sub 3^ films

Journal of alloys and compounds, 2018-07, Vol.754, p.227

2018

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Study on the phase change behavior of nitrogen doped Bi 2 Te 3 films

Journal of alloys and compounds, 2018-07, Vol.754, p.227-231

2018

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Atomic scale insight into the effects of Aluminum doped Sb2Te for phase change memory application

Scientific reports, 2018-10, Vol.8 (1), p.1-9, Article 15136

2018

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Electrical switching properties and structural characteristics of GeSe-GeTe filmsElectronic supplementary information (ESI) available. See DOI: 10.1039/c8nr07832g

2019-01

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Ta-Doped Sb 2 Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics

Nano-micro letters, 2021-01, Vol.13 (1), p.33

2021

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Front Cover Image

InfoMat, 2021-09, Vol.3 (9)

2021

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Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

Science (American Association for the Advancement of Science), 2017-11, Vol.358 (6369)

2017

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Surface etching mechanism of carbon-doped Ge sub(2)Sb sub(2)Te sub(5) phase change material in fluorocarbon plasma

Applied physics. A, Materials science & processing, 2016-09, Vol.122 (9), p.1-6

2016

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Investigation of Cr0.06(Sb4Te)0.94 alloy for high-speed and high-data-retention phase change random access memory applications

Applied physics. A, Materials science & processing, 2015-08, Vol.120 (2), p.537-542

2015

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Reducing structural change in the phase transition of Ge-doped BiSbTe to enable high-speed and low-energy memory switching

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-10, Vol.7 (38), p.11813-11823

2019

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Reducing structural change in the phase transition of Ge-doped Bi 0.5 Sb 1.5 Te 3 to enable high-speed and low-energy memory switching

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-10, Vol.7 (38), p.11813-11823

2019

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Step Motor Control Based on PLC

2022 5th World Conference on Mechanical Engineering and Intelligent Manufacturing (WCMEIM), 2022, p.579-582

2022

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Avalanche atomic switching in strain engineered Sb 2 Te 3 –GeTe interfacial phase-change memory cells

Nano futures, 2017-09, Vol.1 (2), p.25003

2017

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Cr^sub x^Sb^sub 2^Te^sub 1^ materials for phase change memory with high speed and good thermal stability performance

Journal of materials science. Materials in electronics, 2015-06, Vol.26 (6), p.4138

2015

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Atomic scale insight into the effects of Aluminum doped Sb 2 Te for phase change memory application

Scientific reports, 2018-10, Vol.8 (1), p.15136

2018

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Characterization of Cr-doped Sb 2 Te 3 films and their application to phase-change memory: Characterization of Cr-doped Sb 2 Te 3 films and their application to phase-change memory

Physica status solidi. PSS-RRL. Rapid research letters, 2015-08, Vol.9 (8), p.470-474

2015

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Characterization of Cr-doped Sb sub(2)Te sub(3) films and their application to phase-change memory

Physica status solidi. PSS-RRL. Rapid research letters, 2015-08, Vol.9 (8), p.470-474

2015

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Design of zoom LWIR projection system based on DMD

Infrared and Laser Engineering, 2016, Vol.45 (12), p.1218003

2016

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Design of zoom LWIR projection system based on DMD

Infrared and Laser Engineering, 2016, Vol.45 (12), p.1218003

2016

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Pseudobinary Al 2 Te 3 -Sb 2 Te 3 material for high speed phase change memory application

Applied physics letters, 2012-01, Vol.100 (5), p.052105-052105-3

2012

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Ge 2 Sb 2 Te 5 Phase Change Memory Cell Featuring Platinum Tapered Heating Electrode For Low-Voltage Operation

Japanese Journal of Applied Physics, 2010-02, Vol.49 (2R), p.26503

2010

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Phase Change Line Memory Cell Based on Ge 2 Sb 2 Te 5 Fabricated Using Focused Ion Beam

Japanese Journal of Applied Physics, 2011-07, Vol.50 (7R), p.70211

2011

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One order of magnitude faster phase change at reduced power in Ti-Sb-Te

Correction: 12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Atomic-Scale Observation of Carbon Distribution in High-Performance Carbon-Doped Ge 2 Sb 2 Te 5 and Its Influence on Crystallization Behavior

Study on the phase change behavior of nitrogen doped Bi^sub 2^Te^sub 3^ films

Study on the phase change behavior of nitrogen doped Bi 2 Te 3 films

Atomic scale insight into the effects of Aluminum doped Sb2Te for phase change memory application

Electrical switching properties and structural characteristics of GeSe-GeTe filmsElectronic supplementary information (ESI) available. See DOI: 10.1039/c8nr07832g

Ta-Doped Sb 2 Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics

Front Cover Image

Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

Surface etching mechanism of carbon-doped Ge sub(2)Sb sub(2)Te sub(5) phase change material in fluorocarbon plasma

Investigation of Cr0.06(Sb4Te)0.94 alloy for high-speed and high-data-retention phase change random access memory applications

Reducing structural change in the phase transition of Ge-doped BiSbTe to enable high-speed and low-energy memory switching

Reducing structural change in the phase transition of Ge-doped Bi 0.5 Sb 1.5 Te 3 to enable high-speed and low-energy memory switching

Step Motor Control Based on PLC

Avalanche atomic switching in strain engineered Sb 2 Te 3 –GeTe interfacial phase-change memory cells

Cr^sub x^Sb^sub 2^Te^sub 1^ materials for phase change memory with high speed and good thermal stability performance

Atomic scale insight into the effects of Aluminum doped Sb 2 Te for phase change memory application

Characterization of Cr-doped Sb 2 Te 3 films and their application to phase-change memory: Characterization of Cr-doped Sb 2 Te 3 films and their application to phase-change memory

Characterization of Cr-doped Sb sub(2)Te sub(3) films and their application to phase-change memory

Design of zoom LWIR projection system based on DMD

Design of zoom LWIR projection system based on DMD

Pseudobinary Al 2 Te 3 -Sb 2 Te 3 material for high speed phase change memory application

Ge 2 Sb 2 Te 5 Phase Change Memory Cell Featuring Platinum Tapered Heating Electrode For Low-Voltage Operation

Phase Change Line Memory Cell Based on Ge 2 Sb 2 Te 5 Fabricated Using Focused Ion Beam

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