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Effect of oxygen plasma treatment on the performance of AlGaN/GaN ion-sensitive field-effect transistors

Diamond and related materials, 2017-03, Vol.73, p.1-6

2017

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Mechanism on BiVO4 photoanode photoelectrochemical performance improving: Based on surface electrochemical reduction method

Electrochimica acta, 2021-01, Vol.366, p.137288, Article 137288

2021

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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO 4 Photoanode by Doped Quantum Layers Modification

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21), p.e2200454

2022

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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification (Small 21/2022)

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21), p.n/a

2022

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Photoelectrical characteristics of ultra thin TiO2/diamond photodetector

Materials letters, 2017-02, Vol.188, p.52-54

2017

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Band alignment between NiOx and nonpolar/semipolar GaN planes for selective-area-doped termination structure

中国物理B（英文版）, 2021-06, Vol.30 (6), p.665-670

2021

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Metal–Insulator–Semiconductor Diode Characterization on n-GaN by Capacitance–Voltage Measurement at 150 °C

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4S), p.4

2010

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Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors

Applied surface science, 2015-10, Vol.351, p.1155-1160

2015

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Photoanodes: Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet (Adv. Mater. Interfaces 10/2017)

Advanced materials interfaces, 2017-05, Vol.4 (10), p.n/a

2017

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Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound metal-insulator-semiconductor gate

2022 10th International Symposium on Next-Generation Electronics (ISNE), 2023, p.1-3

2023

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V - V Characterization of AlGaN/GaN HFET With p-Type Body Layer

IEEE transactions on electron devices, 2011-12, Vol.58 (12), p.4265-4271

2011

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Technologies for wireless charging in microwave cavity box using GaN Schottky barrier diode

2016 IEEE Wireless Power Transfer Conference (WPTC), 2016, p.1-4

2016

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VT — VSUB Characterization of AlGaN/GaN HFET With p-Type Body Layer

IEEE transactions on electron devices, 2011-12, Vol.58 (12), p.4265-4271

2011

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The Correlation between the Reduction of Interface State Density at the SiO2/SiC Interface and the NO Post-Oxide-Annealing Conditions

Materials science forum, 2019-05, Vol.954, p.104-108

2019

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Reliability of 4H-SiC (0001) MOS Gate Oxide by NO Post-Oxide-Annealing

Materials science forum, 2019-05, Vol.954, p.109-113, Article 109

2019

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Ultra-High Efficiency Microwave Rectifier Based on Patterned GaN Schottky Barrier Diode

2022 IEEE MTT-S International Wireless Symposium (IWS), 2022, Vol.1, p.1-3

2022

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Improved Electrical Properties of 4H-SiC MOS Devices with High Temperature Thermal Oxidation

Materials science forum, 2019-05, Vol.954, p.99-103

2019

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Effect of Grinding-Induced Stress on Interface State Density of SiC/SiO2

Materials science forum, 2019-05, Vol.954, p.121-125

2019

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BiVO4 photoanode modification by synergic dual-conjugated organic materials

Journal of alloys and compounds, 2022-10, Vol.918, p.165605, Article 165605

2022

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Power transmission through insulating plate using open-ring resonator coupling and GaN Schottky diode

2011 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications, 2011, p.33-36

2011

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GaN Schottky Barrier Diodes with TiN Electrode for Microwave Power Transmission

Materials science forum, 2019-05, Vol.954, p.126-132

2019

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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO 4 Photoanode by Doped Quantum Layers Modification (Small 21/2022)

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21)

2022

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Improvement of BiVO 4 Photoanode Performance During Water Photo‐Oxidation Using Rh‐Doped SrTiO 3 Perovskite as a Co‐Catalyst

Advanced functional materials, 2019-08, Vol.29 (32)

2019

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GaN Schottky barrier diodes for microwave power transmission

2018 IEEE MTT-S International Wireless Symposium (IWS), 2018, p.1-4

2018

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Photogenerated-carrier separation along edge dislocation of WO3 single-crystal nanoflower photoanodeElectronic supplementary information (ESI) available: XRD, SEM, HRTEM, XPS, time-resolved photoluminescence spectrum, UV-vis DRS. See DOI: 10.1039/c8ta00796a

2018-05

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Effect of oxygen plasma treatment on the performance of AlGaN/GaN ion-sensitive field-effect transistors

Mechanism on BiVO4 photoanode photoelectrochemical performance improving: Based on surface electrochemical reduction method

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO 4 Photoanode by Doped Quantum Layers Modification

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification (Small 21/2022)

Photoelectrical characteristics of ultra thin TiO2/diamond photodetector

Band alignment between NiOx and nonpolar/semipolar GaN planes for selective-area-doped termination structure

Metal–Insulator–Semiconductor Diode Characterization on n-GaN by Capacitance–Voltage Measurement at 150 °C

Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors

Photoanodes: Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet (Adv. Mater. Interfaces 10/2017)

Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound metal-insulator-semiconductor gate

V - V Characterization of AlGaN/GaN HFET With p-Type Body Layer

Technologies for wireless charging in microwave cavity box using GaN Schottky barrier diode

VT — VSUB Characterization of AlGaN/GaN HFET With p-Type Body Layer

The Correlation between the Reduction of Interface State Density at the SiO2/SiC Interface and the NO Post-Oxide-Annealing Conditions

Reliability of 4H-SiC (0001) MOS Gate Oxide by NO Post-Oxide-Annealing

Ultra-High Efficiency Microwave Rectifier Based on Patterned GaN Schottky Barrier Diode

Improved Electrical Properties of 4H-SiC MOS Devices with High Temperature Thermal Oxidation

Effect of Grinding-Induced Stress on Interface State Density of SiC/SiO2

BiVO4 photoanode modification by synergic dual-conjugated organic materials

Power transmission through insulating plate using open-ring resonator coupling and GaN Schottky diode

GaN Schottky Barrier Diodes with TiN Electrode for Microwave Power Transmission

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO 4 Photoanode by Doped Quantum Layers Modification (Small 21/2022)

Improvement of BiVO 4 Photoanode Performance During Water Photo‐Oxidation Using Rh‐Doped SrTiO 3 Perovskite as a Co‐Catalyst

GaN Schottky barrier diodes for microwave power transmission

Photogenerated-carrier separation along edge dislocation of WO3 single-crystal nanoflower photoanodeElectronic supplementary information (ESI) available: XRD, SEM, HRTEM, XPS, time-resolved photoluminescence spectrum, UV-vis DRS. See DOI: 10.1039/c8ta00796a

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