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Mechanisms of Photoconductivity in Atomically Thin MoS2

Nano letters, 2014-11, Vol.14 (11), p.6165-6170

2014

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Chemical Vapor Sensing with Monolayer MoS2

Nano letters, 2013-02, Vol.13 (2), p.668-673

2013

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Active Tunable 002.Absorption Enhancement with Graphene Nanodisk Arrays

Nano letters, 2014-01, Vol.14 (1), p.299-304

2014

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Room-Temperature Near-Infrared High‑Q Perovskite Whispering-Gallery Planar Nanolasers

Nano letters, 2014-10, Vol.14 (10), p.5995-6001

2014

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Interlayer Breathing and Shear Modes in Few-Trilayer MoS2 and WSe2

Nano letters, 2013-03, Vol.13 (3), p.1007-1015

2013

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CMOS-compatible multiple-wavelength oscillator for on-chip optical interconnects

Nature photonics, 2009-12, Vol.4 (1), p.37-40

2009

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Flexible and stretchable electrodes for dielectric elastomer actuators

Applied physics. A, Materials science & processing, 2013-02, Vol.110 (2), p.281-307

2013

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AlGaN/GaN HEMT With 300-GHz fmax

IEEE electron device letters, 2010-03, Vol.31 (3), p.195-197

2010

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Solution-Processed Ultraviolet Photodetectors Based on Colloidal ZnO Nanoparticles

Nano letters, 2008-06, Vol.8 (6), p.1649-1653

2008

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Functional Electrical Stimulation by Nanogenerator with 58 V Output Voltage

Nano letters, 2012-06, Vol.12 (6), p.3086-3090

2012

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A 128 × 128 1.5% Contrast Sensitivity 0.9% FPN 3 μs Latency 4 mW Asynchronous Frame-Free Dynamic Vision Sensor Using Transimpedance Preamplifiers

IEEE journal of solid-state circuits, 2013, Vol.48 (3), p.827-838

2013

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Sulfide Nanocrystal Inks for Dense Cu(In1−x Gax)(S1−y Se y )2 Absorber Films and Their Photovoltaic Performance

Nano letters, 2009-08, Vol.9 (8), p.3060-3065

2009

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Graphene As Transparent Conducting Electrodes in Organic Photovoltaics: Studies in Graphene Morphology, Hole Transporting Layers, and Counter Electrodes

Nano letters, 2012-01, Vol.12 (1), p.133-140

2012

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A CMOS Temperature Sensor With a Voltage-Calibrated Inaccuracy of ± 0.15°C (3σ) From ―55°C to 125°C

IEEE journal of solid-state circuits, 2013, Vol.48 (1), p.292-301

2013

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A 53-nW 9.1-ENOB 1-kS/s SAR ADC in 0.13-μm CMOS for Medical Implant Devices

IEEE journal of solid-state circuits, 2012-07, Vol.47 (7), p.1585-1593

2012

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Room-Temperature Negative Capacitance in a Ferroelectric–Dielectric Superlattice Heterostructure

Nano letters, 2014-10, Vol.14 (10), p.5814-5819

2014

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Electromechanical Computing at 500°C with Silicon Carbide

Science (American Association for the Advancement of Science), 2010-09, Vol.329 (5997), p.1316-1318

2010

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Mode-Division Multiplexing of 2 × 100 Gb/s Channels Using an LCOS-Based Spatial Modulator

Journal of lightwave technology, 2012, Vol.30 (1-4), p.618-623

2012

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Piezoelectric-Potential-Controlled Polarity-Reversible Schottky Diodes and Switches of ZnO Wires

Nano letters, 2008-11, Vol.8 (11), p.3973-3977

2008

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CMOS Image Sensor With Per-Column ΣΔ ADC and Programmable Compressed Sensing

IEEE journal of solid-state circuits, 2013-01, Vol.48 (1), p.318-328

2013

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IEEE_Xplore

600 V Diamond Junction Field-Effect Transistors Operated at 200 °C

IEEE electron device letters, 2014-02, Vol.35 (2), p.241-243

2014

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A 12-Bit, 10-MHz Bandwidth, Continuous-Time ΣΔ ADC With a 5-Bit, 950-MS/s VCO-Based Quantizer

IEEE journal of solid-state circuits, 2008, Vol.43 (4), p.805-814

2008

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A High-Temperature SiC Three-Phase AC-DC Converter Design for > 100 °C Ambient Temperature

IEEE transactions on power electronics, 2013, Vol.28 (1), p.555-572

2013

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A 9 b, 1.25 ps Resolution Coarse-Fine Time-to-Digital Converter in 90 nm CMOS that Amplifies a Time Residue

IEEE journal of solid-state circuits, 2008-04, Vol.43 (4), p.769-777

2008

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IEEE_Xplore

A 100-m Range 10-Frame/s 340 × 96-Pixel Time-of-Flight Depth Sensor in 0.18-μm CMOS

IEEE journal of solid-state circuits, 2013, Vol.48 (2), p.559-572

2013

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Mechanisms of Photoconductivity in Atomically Thin MoS2

Chemical Vapor Sensing with Monolayer MoS2

Active Tunable 002.Absorption Enhancement with Graphene Nanodisk Arrays

Room-Temperature Near-Infrared High‑Q Perovskite Whispering-Gallery Planar Nanolasers

Interlayer Breathing and Shear Modes in Few-Trilayer MoS2 and WSe2

CMOS-compatible multiple-wavelength oscillator for on-chip optical interconnects

Flexible and stretchable electrodes for dielectric elastomer actuators

AlGaN/GaN HEMT With 300-GHz fmax

Solution-Processed Ultraviolet Photodetectors Based on Colloidal ZnO Nanoparticles

Functional Electrical Stimulation by Nanogenerator with 58 V Output Voltage

A 128 × 128 1.5% Contrast Sensitivity 0.9% FPN 3 μs Latency 4 mW Asynchronous Frame-Free Dynamic Vision Sensor Using Transimpedance Preamplifiers

Sulfide Nanocrystal Inks for Dense Cu(In1−x Gax)(S1−y Se y )2 Absorber Films and Their Photovoltaic Performance

Graphene As Transparent Conducting Electrodes in Organic Photovoltaics: Studies in Graphene Morphology, Hole Transporting Layers, and Counter Electrodes

A CMOS Temperature Sensor With a Voltage-Calibrated Inaccuracy of ± 0.15°C (3σ) From ―55°C to 125°C

A 53-nW 9.1-ENOB 1-kS/s SAR ADC in 0.13-μm CMOS for Medical Implant Devices

Room-Temperature Negative Capacitance in a Ferroelectric–Dielectric Superlattice Heterostructure

Electromechanical Computing at 500°C with Silicon Carbide

Mode-Division Multiplexing of 2 × 100 Gb/s Channels Using an LCOS-Based Spatial Modulator

Piezoelectric-Potential-Controlled Polarity-Reversible Schottky Diodes and Switches of ZnO Wires

CMOS Image Sensor With Per-Column ΣΔ ADC and Programmable Compressed Sensing

600 V Diamond Junction Field-Effect Transistors Operated at 200 °C

A 12-Bit, 10-MHz Bandwidth, Continuous-Time ΣΔ ADC With a 5-Bit, 950-MS/s VCO-Based Quantizer

A High-Temperature SiC Three-Phase AC-DC Converter Design for > 100 °C Ambient Temperature

A 9 b, 1.25 ps Resolution Coarse-Fine Time-to-Digital Converter in 90 nm CMOS that Amplifies a Time Residue

A 100-m Range 10-Frame/s 340 × 96-Pixel Time-of-Flight Depth Sensor in 0.18-μm CMOS

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