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Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Applied surface science, 2014-07, Vol.306, p.89-93

2014

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Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1−x Sbx/AlSb deep quantum well

Journal of applied physics, 2014-06, Vol.115 (22)

2014

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The Metalorganic Vapour Phase Epitaxy Growth of A III B V Heterostructures Observed by Reflection Anisotropy Spectroscopy

Acta physica Polonica, A, 2016-01, Vol.129 (1a), p.A-75-A-78

2016

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Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs{sub 1−x} Sb{sub x}/AlSb deep quantum well

Journal of applied physics, 2014-06, Vol.115 (22)

2014

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Photoelectric and luminescence properties of GaSb-based nanoheterostructures with a deep AlSb quantum well grown by metalorganic vapor-phase epitaxy

Semiconductors (Woodbury, N.Y.), 2013-08, Vol.47 (8), p.1041

2013

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Erratum: "Ballistic electron emission spectroscopy/microscopy of self-assembled InAs quantum dots of different sizes embedded in Ga As ∕ Al Ga As heterostructure" [Appl. Phys. Lett. 92, 012101 (2008)]

Applied physics letters, 2008-03, Vol.92 (10), p.109904-109904-1

2008

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Erratum: “Ballistic electron emission spectroscopy/microscopy of self-assembled InAs quantum dots of different sizes embedded in GaAs∕AlGaAs heterostructure” [Appl. Phys. Lett. 92, 012101 (2008)]

Applied physics letters, 2008-03, Vol.92 (10)

2008

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Ballistic electron emission spectroscopy/microscopy of self-assembled InAs quantum dots of different sizes embedded in GaAs ∕ AlGa As heterostructure

Applied physics letters, 2008-01, Vol.92 (1), p.012101-012101-3

2008

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Study of InAs quantum dots in Al Ga As ∕ Ga As heterostructure by ballistic electron emission microscopy/spectroscopy

Applied physics letters, 2007-07, Vol.91 (4), p.042110-042110-3

2007

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Elongation of In As ∕ Ga As quantum dots from magnetophotoluminescence measurements

Applied physics letters, 2006-10, Vol.89 (15), p.153108-153108-3

2006

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Vapour pressure and heat capacities of metal organic precursors, Y(thd) 3 and Zr(thd) 4

Journal of crystal growth, 2004-03, Vol.264 (1), p.192-200

2004

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Electroluminescence of type II broken-gap p - Ga 0.84 In 0.16 As 0.22 Sb 0.78 ∕ p - InAs heterostructures with a high-mobility electron channel at the interface

Journal of applied physics, 2005-10, Vol.98 (8), p.083512-083512-5

2005

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Room-temperature electroluminescence of Al Sb ∕ In As Sb single quantum wells grown by metal organic vapor phase epitaxy

Applied physics letters, 2006-03, Vol.88 (13), p.132102-132102-3

2006

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GaSb based lasers operating near 2.3 microm for high resolution absorption spectroscopy

Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy, 2005-10, Vol.61 (13-14), p.3066-3069

2005

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Room-temperature diode laser photoacoustic spectroscopy near 2.3 mm

Applied physics. B, Lasers and optics, 2005-10, Vol.81 (6), p.857-861

2005

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InAs/GaAs quantum dot structures emitting in the 1.55 Delta mm band

IOP conference series. Materials Science and Engineering, 2009-01, Vol.6 (1), p.012007-012007

2009

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1.3 µm emission from InAs/GaAs quantum dots

Physica status solidi. C, 2006-12, Vol.3 (11), p.3811-3814

2006

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Room-temperature diode laser photoacoustic spectroscopy near 2.3 µm

Applied physics. B, Lasers and optics, 2005, Vol.81 (6), p.857-861

2005

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Transport mechanisms in GaAlAs-based laser structures

Semiconductor science and technology, 1991-04, Vol.6 (4), p.261-267

1991

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Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs

Optical materials, 2002, Vol.19 (4), p.455-459

2002

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Photoluminescence of Ga 0.94In 0.06As 0.13Sb 0.87 solid solution lattice matched to InAs

Optical materials, 2002, Vol.19 (4), p.455-459

2002

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Structural properties of interfaces in AlInAs/GaAs superlattices

Acta crystallographica. Section A, Foundations of crystallography, 2002-08, Vol.58 (s1), p.c347-c347

2002

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Raman scattering study of type II GaInAsSb/InAs heterostructures

Crystal research and technology (1979), 2002, Vol.37 (2-3), p.259-267

2002

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1.3 mum emission from InAs/GaAs quantum dots

Physica status solidi. C, 2006-01, Vol.3 (11), p.3811-3814

2006

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Broken-gap heterojunction in the p-GaSb-n-InAs1−x Sbx(0≤x≤0.18) system

Technical physics letters, 2001-11, Vol.27 (11), p.964-966

2001

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Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1−x Sbx/AlSb deep quantum well

The Metalorganic Vapour Phase Epitaxy Growth of A III B V Heterostructures Observed by Reflection Anisotropy Spectroscopy

Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs{sub 1−x} Sb{sub x}/AlSb deep quantum well

Photoelectric and luminescence properties of GaSb-based nanoheterostructures with a deep AlSb quantum well grown by metalorganic vapor-phase epitaxy

Erratum: "Ballistic electron emission spectroscopy/microscopy of self-assembled InAs quantum dots of different sizes embedded in Ga As ∕ Al Ga As heterostructure" [Appl. Phys. Lett. 92, 012101 (2008)]

Erratum: “Ballistic electron emission spectroscopy/microscopy of self-assembled InAs quantum dots of different sizes embedded in GaAs∕AlGaAs heterostructure” [Appl. Phys. Lett. 92, 012101 (2008)]

Ballistic electron emission spectroscopy/microscopy of self-assembled InAs quantum dots of different sizes embedded in GaAs ∕ AlGa As heterostructure

Study of InAs quantum dots in Al Ga As ∕ Ga As heterostructure by ballistic electron emission microscopy/spectroscopy

Elongation of In As ∕ Ga As quantum dots from magnetophotoluminescence measurements

Vapour pressure and heat capacities of metal organic precursors, Y(thd) 3 and Zr(thd) 4

Electroluminescence of type II broken-gap p - Ga 0.84 In 0.16 As 0.22 Sb 0.78 ∕ p - InAs heterostructures with a high-mobility electron channel at the interface

Room-temperature electroluminescence of Al Sb ∕ In As Sb single quantum wells grown by metal organic vapor phase epitaxy

GaSb based lasers operating near 2.3 microm for high resolution absorption spectroscopy

Room-temperature diode laser photoacoustic spectroscopy near 2.3 mm

InAs/GaAs quantum dot structures emitting in the 1.55 Delta mm band

1.3 µm emission from InAs/GaAs quantum dots

Room-temperature diode laser photoacoustic spectroscopy near 2.3 µm

Transport mechanisms in GaAlAs-based laser structures

Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs

Photoluminescence of Ga 0.94In 0.06As 0.13Sb 0.87 solid solution lattice matched to InAs

Structural properties of interfaces in AlInAs/GaAs superlattices

Raman scattering study of type II GaInAsSb/InAs heterostructures

1.3 mum emission from InAs/GaAs quantum dots

Broken-gap heterojunction in the p-GaSb-n-InAs1−x Sbx(0≤x≤0.18) system

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