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Extended Continuous Inverse Class-F Power Amplifiers With Class-AB Bias Conditions

IEEE microwave and wireless components letters, 2017-04, Vol.27 (4), p.368-370

2017

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Theoretical Study on All-Dielectric Elliptic Cross Metasurface Sensor Governed by Bound States in the Continuum

Materials, 2023-03, Vol.16 (5), p.2113

2023

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A low noise transimpedance amplifier for optical receiver

Review of scientific instruments, 2021-03, Vol.92 (3)

2021

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Circularly symmetric algorithm for UWB RF signal receiving channel based on noise cancellation

Open Physics, 2020-11, Vol.18 (1), p.779-789

2020

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Fully Integrated Class-J Power Amplifier in Standard CMOS Technology

IEEE microwave and wireless components letters, 2017-01, Vol.27 (1), p.64-66

2017

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An Efficient Forward-Biased Si CMOS LED With High Optical Power Density and Nonlinear Optical-Power-Current Characteristic

IEEE photonics journal, 2019-04, Vol.11 (2), p.1-10

2019

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Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process

IEEE photonics journal, 2019-06, Vol.11 (3), p.1-10

2019

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Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs

IEEE photonics journal, 2017-10, Vol.9 (5), p.1-8

2017

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Power Uniformity Optimization in Indoor Visible Light Communication Based on Ant Colony Algorithm

Ji guang yu guang dian zi jin zhan, 2019, Vol.56 (22), p.220601

2019

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High Optical Power Density Forward-Biased Silicon LEDs in Standard CMOS Process

IEEE photonics technology letters, 2015-01, Vol.27 (2), p.121-124

2015

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Design, Fabrication, and Modeling of CMOS-Compatible Double Photodiode

Transactions of Tianjin University, 2017-03, Vol.23 (2), p.163-167

2017

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Perfect linear polarization wave generator based on quasi-bound states in the continuum

Optics letters, 2023-05, Vol.48 (10), p.2559-2562

2023

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High-Accuracy Amplitude and Phase Measurements for Low-Level RF Systems

IEEE transactions on instrumentation and measurement, 2012-04, Vol.61 (4), p.912-921

2012

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Experimental implementation for near-field displaying application of bound states in continuum supported by terahertz metasurfaces

Optics express, 2023-01, Vol.31 (2), p.2654-2664

2023

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Novel pre-equalization transimpedance amplifier for 10 Gb/s optical interconnects

Journal of semiconductors, 2015-07, Vol.36 (7), p.75002

2015

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High-Gm Differential Regulated Cascode Transimpedance Amplifier

Transactions of Tianjin University, 2016-08, Vol.22 (4), p.345-351

谢生陶希子毛陆虹高谦吴思聪

2016

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Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits

Journal of semiconductors, 2015-12, Vol.36 (12), p.1-13

陈弘达张赞黄北举毛陆虹张赞允

2015

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Structural inheritance and change from ZnSn(OH)6 to ZnSnO3 compounds used for ethanol sensors: Effects of oxygen vacancies, temperature and UV on gas-sensing properties

Journal of alloys and compounds, 2020-07, Vol.829, p.154445, Article 154445

2020

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185–220 GHz wideband amplifier in 40 nm CMOS

Electronics letters, 2018-06, Vol.54 (13), p.802-804

2018

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Design and realization of InP/AlGaInAs multiple quantum well ring laser

Transactions of Tianjin University, 2014-12, Vol.20 (6), p.402-406

2014

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Liquid Pressure Sensing System With Coupling RFID and HMM Based on Distance Measurement

IEEE sensors journal, 2021-01, Vol.21 (2), p.1051-1058

2021

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A 50Gb/s PAM4 receiver with mid-frequency compensation and decision jitter cancellation

IEICE Electronics Express, 2024-04, Vol.21 (7), p.20240059-20240059, Article 21.20240059

2024

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A fully differential transimpedance amplifier with integrated differential photodetector in standard CMOS process for optical communications and interconnects

Science China. Information sciences, 2011-06, Vol.54 (6), p.1300-1311

2011

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A G-Band Wideband Bidirectional Transceiver Front-End in 40-nm CMOS

IEEE transactions on circuits and systems. II, Express briefs, 2019-05, Vol.66 (5), p.798-802

2019

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An energy- and area-efficient limiting amplifier with interleaving feedback for 25Gb/s optical receiver

IEICE Electronics Express, 2021-04, Vol.18 (8), p.20210112-20210112

2021

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Extended Continuous Inverse Class-F Power Amplifiers With Class-AB Bias Conditions

Theoretical Study on All-Dielectric Elliptic Cross Metasurface Sensor Governed by Bound States in the Continuum

A low noise transimpedance amplifier for optical receiver

Circularly symmetric algorithm for UWB RF signal receiving channel based on noise cancellation

Fully Integrated Class-J Power Amplifier in Standard CMOS Technology

An Efficient Forward-Biased Si CMOS LED With High Optical Power Density and Nonlinear Optical-Power-Current Characteristic

Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process

Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs

Power Uniformity Optimization in Indoor Visible Light Communication Based on Ant Colony Algorithm

High Optical Power Density Forward-Biased Silicon LEDs in Standard CMOS Process

Design, Fabrication, and Modeling of CMOS-Compatible Double Photodiode

Perfect linear polarization wave generator based on quasi-bound states in the continuum

High-Accuracy Amplitude and Phase Measurements for Low-Level RF Systems

Experimental implementation for near-field displaying application of bound states in continuum supported by terahertz metasurfaces

Novel pre-equalization transimpedance amplifier for 10 Gb/s optical interconnects

High-Gm Differential Regulated Cascode Transimpedance Amplifier

Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits

Structural inheritance and change from ZnSn(OH)6 to ZnSnO3 compounds used for ethanol sensors: Effects of oxygen vacancies, temperature and UV on gas-sensing properties

185–220 GHz wideband amplifier in 40 nm CMOS

Design and realization of InP/AlGaInAs multiple quantum well ring laser

Liquid Pressure Sensing System With Coupling RFID and HMM Based on Distance Measurement

A 50Gb/s PAM4 receiver with mid-frequency compensation and decision jitter cancellation

A fully differential transimpedance amplifier with integrated differential photodetector in standard CMOS process for optical communications and interconnects

A G-Band Wideband Bidirectional Transceiver Front-End in 40-nm CMOS

An energy- and area-efficient limiting amplifier with interleaving feedback for 25Gb/s optical receiver

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