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Space debris generation in GEO: Space materials testing and evaluation

Acta astronautica, 2022-03, Vol.192, p.258-275

2022

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Degradation Study of InGaAsN p-i-n Solar Cell Under 1-MeV Electron Irradiation

IEEE transactions on nuclear science, 2021-08, Vol.68 (8), p.1694-1700

2021

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Collected Charge Analysis for a New Transient Model by TCAD Simulation in 90 nm Technology

IEEE transactions on nuclear science, 2010-08, Vol.57 (4), p.1869-1875

2010

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From the Reference SEU Monitor to the Technology Demonstration Module On-Board PROBA-II

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3082-3087

2008

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SEU rate calculation with GEANT4 (comparison with CREME 86)

IEEE transactions on nuclear science, 2004-10, Vol.51 (5), p.2805-2810

2004

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Multi-scale modeling to investigate the single event effects for space missions

Acta astronautica, 2011-09, Vol.69 (7), p.526-536

2011

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System for space materials evaluation in LEO environment

Advances in space research, 2020-07, Vol.66 (2), p.307-320

2020

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Electrical aging behavioral modeling for reliability analyses of ionizing dose effects on an n-MOS simple current mirror

Microelectronics and reliability, 2009-09, Vol.49 (9), p.946-951

2009

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Spectrometers Results of Material Exposure and Degradation Experiment Onboard International Space Station

Journal of spacecraft and rockets, 2011-01, Vol.48 (1), p.38-44

2011

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Influence of LDD spacers on total ionizing dose response of the transconductance for bulk MOSFETs working at cryogenic temperatures

Microelectronics and reliability, 2022-08, Vol.135, p.114603, Article 114603

2022

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Evaluation of Recent Technologies of Nonvolatile RAM

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.1982-1991

2008

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Probing With Heavy Ions the SET Sensitivity of Linear Devices

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3321-3327

2008

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Contribution of GEANT4 to the determination of sensitive volumes in case of high-integrated RAMs

IEEE transactions on nuclear science, 2002-06, Vol.49 (3), p.1480-1485

2002

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2008 Special NSREC Issue of the IEEE Transactions on Nuclear Science Comments by the Editors

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2810-2810

2008

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Interaction mechanisms between Atomic Oxygen and materials: investigation on reflected beam

IOP conference series. Materials Science and Engineering, 2023-08, Vol.1287 (1), p.12010

2023

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Preliminary Flight Data From the Materials Exposure and Degradation experiment (MEDET)

Proceedings of the 9th International Conference on Protection of Materials and Structures From Space Environment (AIP Conference Proceedings Volume 1087), 2009, Vol.1087, p.195-206

2009

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Radiation effects on electronic devices in space

Aerospace science and technology, 2005, Vol.9 (1), p.93-99

Duzellier, Sophie

2005

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Gamma irradiation-induced absorption in single-domain and periodically-poled KTiOPO4 and Rb:KTiOPO4

Optical materials express, 2017-11, Vol.7 (11), p.4138

2017

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Two CMOS memory cells suitable for the design of SEU-tolerant VLSI circuits

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994-12, Vol.41 (6), p.2229-2234

1994

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Injection-Free and Cavity Free Parametric Sources for Future Spaceborne DIAL Based on Periodically Poled Nonlinear Materials

Space-based Lidar Remote Sensing Techniques and Emerging Technologies, 2024, p.363-371

2024

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SEU Prediction From SET Modeling Using Multi-Node Collection in Bulk Transistors and SRAMs Down to the 65 nm Technology Node

IEEE transactions on nuclear science, 2011-06, Vol.58 (3), p.1338-1346

2011

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Estimation of latch-up sensitive thickness and critical energy using large inclination heavy ion beams

IEEE transactions on nuclear science, 1997-12, Vol.44 (6), p.2378-2385

1997

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Gamma irradiation-induced absorption in single-domain and periodically-poled KTiOPO_4 and Rb:KTiOPO_4

Optical materials express, 2017-11, Vol.7 (11), p.4138

2017

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Simulation of heavy-ion-induced failure modes in nMOS cells of ICs

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2278-2284

2001

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Gamma irradiation-induced absorption in single-domain and periodically-poled KTiOPO^sub 4^ and Rb:KTiOPO^sub 4

Optical materials express, 2017-11, Vol.7 (11), p.4138

2017

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Space debris generation in GEO: Space materials testing and evaluation

Degradation Study of InGaAsN p-i-n Solar Cell Under 1-MeV Electron Irradiation

Collected Charge Analysis for a New Transient Model by TCAD Simulation in 90 nm Technology

From the Reference SEU Monitor to the Technology Demonstration Module On-Board PROBA-II

SEU rate calculation with GEANT4 (comparison with CREME 86)

Multi-scale modeling to investigate the single event effects for space missions

System for space materials evaluation in LEO environment

Electrical aging behavioral modeling for reliability analyses of ionizing dose effects on an n-MOS simple current mirror

Spectrometers Results of Material Exposure and Degradation Experiment Onboard International Space Station

Influence of LDD spacers on total ionizing dose response of the transconductance for bulk MOSFETs working at cryogenic temperatures

Evaluation of Recent Technologies of Nonvolatile RAM

Probing With Heavy Ions the SET Sensitivity of Linear Devices

Contribution of GEANT4 to the determination of sensitive volumes in case of high-integrated RAMs

2008 Special NSREC Issue of the IEEE Transactions on Nuclear Science Comments by the Editors

Interaction mechanisms between Atomic Oxygen and materials: investigation on reflected beam

Preliminary Flight Data From the Materials Exposure and Degradation experiment (MEDET)

Radiation effects on electronic devices in space

Gamma irradiation-induced absorption in single-domain and periodically-poled KTiOPO4 and Rb:KTiOPO4

Two CMOS memory cells suitable for the design of SEU-tolerant VLSI circuits

Injection-Free and Cavity Free Parametric Sources for Future Spaceborne DIAL Based on Periodically Poled Nonlinear Materials

SEU Prediction From SET Modeling Using Multi-Node Collection in Bulk Transistors and SRAMs Down to the 65 nm Technology Node

Estimation of latch-up sensitive thickness and critical energy using large inclination heavy ion beams

Gamma irradiation-induced absorption in single-domain and periodically-poled KTiOPO_4 and Rb:KTiOPO_4

Simulation of heavy-ion-induced failure modes in nMOS cells of ICs

Gamma irradiation-induced absorption in single-domain and periodically-poled KTiOPO^sub 4^ and Rb:KTiOPO^sub 4

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