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Ion implantation technology and ion sources

Review of scientific instruments, 2014-02, Vol.85 (2)

Sugitani, Michiro

2014

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A Review of Ion Implantation Technology for Image Sensors

Sensors (Basel, Switzerland), 2018-07, Vol.18 (7), p.2358

2018

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Fundamentals of Ion Implantation Technologies for Image Sensing Devices

ECS transactions, 2014, Vol.60 (1), p.675-680

2014

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Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology

ECS transactions, 2014, Vol.64 (6), p.127-145

2014

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Channeled MeV B, P and As Profiles in Si(100): Monte-Carlo Models and SIMS

2018 22nd International Conference on Ion Implantation Technology (IIT), 2018, p.251-254

2018

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MARLOWE Simulation of High Energy Ions into Single Crystalline Silicon Substrates

2018 22nd International Conference on Ion Implantation Technology (IIT), 2018, p.271-274

2018

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Change of Depth Profile for High-Temperature Implantation in Channeling Condition

2018 22nd International Conference on Ion Implantation Technology (IIT), 2018, p.62-65

2018

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Thickness Variance of Silicon Oxide with Nitrogen Ion Implant

2018 22nd International Conference on Ion Implantation Technology (IIT), 2018, p.140-143

2018

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Method of Beam Energy Adjustment by Using Beam Parallelism

2016 21st International Conference on Ion Implantation Technology (IIT), 2016, p.1-4

2016

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Evaluation of Ion Angle Deviation Caused by Outgassing during Ion Implantation

2018 22nd International Conference on Ion Implantation Technology (IIT), 2018, p.303-306

2018

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Process Robustness against Photoresist Outgassing in Single-Wafer High-Energy Implanters

2016 21st International Conference on Ion Implantation Technology (IIT), 2016, p.1-4

2016

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High & Low Dose USJ Implantation into Ge-Epi on Si Wafers: Dopant Activation, Damage Recovery and Mobility Effects

2016 21st International Conference on Ion Implantation Technology (IIT), 2016, p.1-4

2016

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Surface Strained Ge-Cz Wafers by Sn-Implantation for High Electron and Hole Mobility

2016 21st International Conference on Ion Implantation Technology (IIT), 2016, p.1-4

2016

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Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology

Meeting abstracts (Electrochemical Society), 2014-08, Vol.MA2014-02 (35), p.1771-1771

2014

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Feasibility study of plasma doping using B2H6 and PH3 for shallow junction

11th International Workshop on Junction Technology (IWJT), 2011, p.26-29

2011

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Accurate Dose Control in High Pressure Condition on Medium Current Ion Implanters

2007 International Workshop on Junction Technology, 2007, p.127-128

2007

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Requirements of the Low Energy Boron Halo Implantation for the Next Generation of LOP/LSTP Devices

2007 International Workshop on Junction Technology, 2007, p.121-124

2007

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Plasma electron flood for a scanned beam implanter

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on, 2002, p.315-318

2002

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Dose monitoring of heavy ion implantation by Therma-Wave signal

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on, 2002, p.248-251

2002

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Automatic LINAC parameter generation

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144), 1999, Vol.1, p.330-333 vol.1

1999

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Introducing the MC3 medium current 300 mm implanter

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144), 1999, Vol.1, p.154-157 vol.1

1999

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Introducing the NV-GSD-HE3, a new high energy implanter

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144), 1999, Vol.1, p.192-195 vol.1

1999

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Ion implantation technology and ion sources

A Review of Ion Implantation Technology for Image Sensors

Fundamentals of Ion Implantation Technologies for Image Sensing Devices

Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology

Channeled MeV B, P and As Profiles in Si(100): Monte-Carlo Models and SIMS

MARLOWE Simulation of High Energy Ions into Single Crystalline Silicon Substrates

Change of Depth Profile for High-Temperature Implantation in Channeling Condition

Thickness Variance of Silicon Oxide with Nitrogen Ion Implant

Method of Beam Energy Adjustment by Using Beam Parallelism

Evaluation of Ion Angle Deviation Caused by Outgassing during Ion Implantation

Process Robustness against Photoresist Outgassing in Single-Wafer High-Energy Implanters

High & Low Dose USJ Implantation into Ge-Epi on Si Wafers: Dopant Activation, Damage Recovery and Mobility Effects

Surface Strained Ge-Cz Wafers by Sn-Implantation for High Electron and Hole Mobility

Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology

Feasibility study of plasma doping using B2H6 and PH3 for shallow junction

Accurate Dose Control in High Pressure Condition on Medium Current Ion Implanters

Requirements of the Low Energy Boron Halo Implantation for the Next Generation of LOP/LSTP Devices

Plasma electron flood for a scanned beam implanter

Dose monitoring of heavy ion implantation by Therma-Wave signal

Automatic LINAC parameter generation

Introducing the MC3 medium current 300 mm implanter

Introducing the NV-GSD-HE3, a new high energy implanter

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