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Brief Review of Surface Passivation on III-V Semiconductor

Crystals (Basel), 2018-05, Vol.8 (5), p.226

2018

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Transport Properties in InAs Thin Films with Different Degrees of Disorder Near the Metal–Insulator Transition

Journal of electronic materials, 2019-01, Vol.48 (1), p.679-683

2019

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Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide

Scientific reports, 2022-03, Vol.12 (1), p.5010-5010, Article 5010

2022

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Ultraviolet light induced degradation of luminescence in CsPbBr3 perovskite nanocrystals

Materials research bulletin, 2018-06, Vol.102, p.86-91

2018

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The hopping variable range conduction in amorphous InAs thin films

Current Applied Physics, 2018, 18(12), , pp.1492-1495

2018

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Passivation Effect on ZnO Films by SF6 Plasma Treatment

Crystals (Basel), 2019-05, Vol.9 (5), p.236

2019

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Mode-Locking Thulium-Doped Fiber Laser With 1.78-GHz Repetition Rate Based on Combination of Nonlinear Polarization Rotation and Semiconductor Saturable Absorber Mirror

IEEE photonics journal, 2017-06, Vol.9 (3), p.1-8

2017

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Thermal Lens Effect of High Power Semiconductor Laser Waveguide and Its Influence on Beam Divergence Angle of Slow Axis

Zhōngguó jīguāng, 2018-01, Vol.45 (10), p.1005004

2018

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Effects on the Surface and Luminescence Properties of GaAs by SF6 Plasma Passivation

Crystals (Basel), 2018-09, Vol.8 (9), p.339

2018

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Ultrawide-Band Terahertz Beam-Splitter Based on Ultrathin Metallic Films

Guangxué xuébào, 2017-11, Vol.37 (11), p.1131002

2017

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Narrow Linewidth 1064 nm Distributed Bragg Reflector Semiconductor Laser

Zhōngguó jīguāng, 2018-01, Vol.45 (5), p.501006

2018

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Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures

Japanese Journal of Applied Physics, 2018-03, Vol.57 (3), p.30303

2018

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InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering

Solid-state electronics, 2013-11, Vol.89, p.81-84

2013

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Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing

Solid-state electronics, 2013-01, Vol.79, p.281-284

2013

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Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing

IEEE journal of the Electron Devices Society, 2017-03, Vol.5 (2), p.122-127

2017

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Fabrication of Integrated 808 nm Wavelength SLDs With a Ring Seed Source and a Tapered Amplifier

Journal of lightwave technology, 2011-12, Vol.29 (24), p.3689-3692

2011

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Thermal Characterization of Electrically Injected Elliptical Microcavity Lasers

Zhōngguó jīguāng, 2016-01, Vol.43 (4), p.402007

2016

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Study on extended depth of field for a planar flow cytometric microimaging system

Applied optics (2004), 2018-10, Vol.57 (28), p.8424

2018

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High-strain InGaAs/GaAs quantum well grown by MOCVD

Chinese optics letters, 2014-10, Vol.12 (10), p.102702

2014

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The degradation of structure and luminescence in CsPbBr3 perovskite nanocrystals under UV light illumination

AIP Conference Proceedings, 2018, Vol.2036 (1)

2018

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High-performance 1.06- μ m InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers

Semiconductor science and technology, 2019-05, Vol.34 (5), p.55013

2019

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Analysis of Temperature Characteristics of 980 nm Semiconductor Laser Facet

Zhōngguó jīguāng, 2013-11, Vol.40 (11), p.1102004

2013

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Dynamic modulation transfer function analysis and short exposure technique for planar flow cytometric microimaging system

Optik (Stuttgart), 2019-02, Vol.178, p.210-215

2019

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GaInAs/GaAs quantum well intermixing based on SiO2–Cu composite film

Materials science in semiconductor processing, 2022-10, Vol.149, p.106877, Article 106877

2022

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Analysis of thermal characteristics based on a new type diode laser packaging structure

Optical engineering, 2017-08, Vol.56 (8), p.1

2017

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Brief Review of Surface Passivation on III-V Semiconductor

Transport Properties in InAs Thin Films with Different Degrees of Disorder Near the Metal–Insulator Transition

Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide

Ultraviolet light induced degradation of luminescence in CsPbBr3 perovskite nanocrystals

The hopping variable range conduction in amorphous InAs thin films

Passivation Effect on ZnO Films by SF6 Plasma Treatment

Mode-Locking Thulium-Doped Fiber Laser With 1.78-GHz Repetition Rate Based on Combination of Nonlinear Polarization Rotation and Semiconductor Saturable Absorber Mirror

Thermal Lens Effect of High Power Semiconductor Laser Waveguide and Its Influence on Beam Divergence Angle of Slow Axis

Effects on the Surface and Luminescence Properties of GaAs by SF6 Plasma Passivation

Ultrawide-Band Terahertz Beam-Splitter Based on Ultrathin Metallic Films

Narrow Linewidth 1064 nm Distributed Bragg Reflector Semiconductor Laser

Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures

InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering

Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing

Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing

Fabrication of Integrated 808 nm Wavelength SLDs With a Ring Seed Source and a Tapered Amplifier

Thermal Characterization of Electrically Injected Elliptical Microcavity Lasers

Study on extended depth of field for a planar flow cytometric microimaging system

High-strain InGaAs/GaAs quantum well grown by MOCVD

The degradation of structure and luminescence in CsPbBr3 perovskite nanocrystals under UV light illumination

High-performance 1.06- μ m InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers

Analysis of Temperature Characteristics of 980 nm Semiconductor Laser Facet

Dynamic modulation transfer function analysis and short exposure technique for planar flow cytometric microimaging system

GaInAs/GaAs quantum well intermixing based on SiO2–Cu composite film

Analysis of thermal characteristics based on a new type diode laser packaging structure

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