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Integrated terahertz radar based on leaky-wave coherence tomography

Nature electronics, 2020-02, Vol.3 (2), p.122-129

2020

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A 38 dB Gain, Low-Loss, Flat Array Antenna for 320-400 GHz Enabled by Silicon-on-Insulator Micromachining

IEEE transactions on antennas and propagation, 2020-06, Vol.68 (6), p.4450-4458

2020

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Evaluation of Transmission Characteristics of 120-GHz-Band Close-Proximity Wireless Links Using Split-Ring-Resonator Absorber Integrated Planar Slot Antenna

IEICE transactions on electronics, 2023-09, Vol.E106.C (9), p.458-465, Article 2022ECP5065

2023

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An Inverted-L Monopole Array With High Beam Coverage for Antenna-in-Package Modules at the 151.5-164 GHz Band

IEEE access, 2024, Vol.12, p.107144-107152

2024

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Improved Algorithm to Trace Boundary Curves on Two-Dimensional Square Meshes

International journal of automation technology, 2020-09, Vol.14 (5), p.816-823

2020

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Admittance Spectroscopy Up to 67 GHz in InGaAs/InAlAs Triple-Barrier Resonant Tunneling Diodes

IEICE transactions on electronics, 2022-10, Vol.E105.C (10), p.622-626, Article 2021FUS0006

2022

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Transmission Characteristics Control of 120 GHz-Band Bandstop Filter by Coupling Alignment-Free Lattice Pattern

IEICE transactions on electronics, 2021-10, Vol.E104.C (10), p.587-595, Article 2021MMP0001

2021

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Control of 120-GHz-Band Split Ring Resonator Filter by Coupling Lattice Pattern Substrate

IEICE transactions on electronics, 2021-03, Vol.E104.C (3), p.102-111

2021

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A proposal on virtual massive array using fast beam switching and blind algorithm

IEICE COMMUNICATIONS EXPRESS, 2020-12, Vol.9 (12), p.580-585

2020

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32-Gbit/s CMOS Receivers in 300-GHz Band

IEICE transactions on electronics, 2018-07, Vol.E101.C (7), p.464-471

2018

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Compact 141-GHz Differential Amplifier with 20-dB Peak Gain and 22-GHz 3-dB Bandwidth

IEICE transactions on electronics, 2016-10, Vol.E99.C (10), p.1156-1163

2016

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Effect of Gate-Recess Structure on Electron Transport in InP-Based High Electron Mobility Transistors Studied by Monte Carlo Simulations

Japanese Journal of Applied Physics, 2011-10, Vol.50 (10R), p.104302

2011

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A 273-301-GHz Amplifier With 21-dB Peak Gain in 65-nm Standard Bulk CMOS

IEEE microwave and wireless components letters, 2019-05, Vol.29 (5), p.342-344

2019

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E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology

IEICE transactions on electronics, 2010, Vol.E93-C (8), p.1251-1257

2010

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A 38 dBi Gain, Low-Loss, Flat Array Antenna for 320 GHz to 400 GHz Enabled by Silicon-On-Insulator Micromachining

IEEE transactions on antennas and propagation, 2020, Vol.68 (6), p.4450

2020

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Suppression of Multiple Reflection by Metasurface Absorber in 120-GHz-band Close-Proximity Wireless Link

2022 International Symposium on Antennas and Propagation (ISAP), 2022, p.491-492

2022

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Research and Development of GaN-based HEMTs for Millimeter- and Terahertz-Wave Wireless Communications

2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2020, p.19-21

2020

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Optimally Matched 189-232 GHz 6.8 dBm Output Power CMOS Frequency Doubler

International journal of RF and microwave computer-aided engineering, 2024-03, Vol.2024, p.1-7

2024

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Analysis of performances of InSb HEMTs using quantum-corrected Monte Carlo simulation

2012 International Conference on Indium Phosphide and Related Materials, 2012, p.237-240

2012

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Effect of Strain in Channel on Electron Transport Properties of Ga 1− x In x Sb High Electron Mobility Transistor Structures with Strained‐Al 0.40 In 0.60 Sb/Al 0.25 In 0.75 Sb Stepped Buffer

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8)

2023

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Effect of Strain in Channel on Electron Transport Properties of Ga1−x In x Sb High Electron Mobility Transistor Structures with Strained‐Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8), p.n/a

2023

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Experimental Study on Transition Loss of On-Chip SIW Interconnects and Transmission Lines Using Two De-Embedding Reference Planes in 200 GHz Band Frequency

2024 IEEE/MTT-S International Microwave Symposium - IMS 2024, 2024, p.694-697

2024

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Occurrence Analysis of M-stage Classification of Bovine Digital Dermatitis Based on the Regular Foot Trimming Record in a Freestall Dairy Farm in Hokkaido

Nippon Juishikai zasshi, 2021-11, Vol.74 (11), p.707-713

2021

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Improved Electron Transport Properties of Ga 1– x In x Sb Quantum Well Channel Using Strained‐Al 0.40 In 0.60 Sb/Al 1– y In y Sb Stepped Buffer

Physica status solidi. A, Applications and materials science, 2020-02, Vol.217 (3)

2020

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A 32Gbit/s 16QAM CMOS receiver in 300GHz band

2017 IEEE MTT-S International Microwave Symposium (IMS), 2017, p.1703-1706

2017

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Integrated terahertz radar based on leaky-wave coherence tomography

A 38 dB Gain, Low-Loss, Flat Array Antenna for 320-400 GHz Enabled by Silicon-on-Insulator Micromachining

Evaluation of Transmission Characteristics of 120-GHz-Band Close-Proximity Wireless Links Using Split-Ring-Resonator Absorber Integrated Planar Slot Antenna

An Inverted-L Monopole Array With High Beam Coverage for Antenna-in-Package Modules at the 151.5-164 GHz Band

Improved Algorithm to Trace Boundary Curves on Two-Dimensional Square Meshes

Admittance Spectroscopy Up to 67 GHz in InGaAs/InAlAs Triple-Barrier Resonant Tunneling Diodes

Transmission Characteristics Control of 120 GHz-Band Bandstop Filter by Coupling Alignment-Free Lattice Pattern

Control of 120-GHz-Band Split Ring Resonator Filter by Coupling Lattice Pattern Substrate

A proposal on virtual massive array using fast beam switching and blind algorithm

32-Gbit/s CMOS Receivers in 300-GHz Band

Compact 141-GHz Differential Amplifier with 20-dB Peak Gain and 22-GHz 3-dB Bandwidth

Effect of Gate-Recess Structure on Electron Transport in InP-Based High Electron Mobility Transistors Studied by Monte Carlo Simulations

A 273-301-GHz Amplifier With 21-dB Peak Gain in 65-nm Standard Bulk CMOS

E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology

A 38 dBi Gain, Low-Loss, Flat Array Antenna for 320 GHz to 400 GHz Enabled by Silicon-On-Insulator Micromachining

Suppression of Multiple Reflection by Metasurface Absorber in 120-GHz-band Close-Proximity Wireless Link

Research and Development of GaN-based HEMTs for Millimeter- and Terahertz-Wave Wireless Communications

Optimally Matched 189-232 GHz 6.8 dBm Output Power CMOS Frequency Doubler

Analysis of performances of InSb HEMTs using quantum-corrected Monte Carlo simulation

Effect of Strain in Channel on Electron Transport Properties of Ga 1− x In x Sb High Electron Mobility Transistor Structures with Strained‐Al 0.40 In 0.60 Sb/Al 0.25 In 0.75 Sb Stepped Buffer

Effect of Strain in Channel on Electron Transport Properties of Ga1−x In x Sb High Electron Mobility Transistor Structures with Strained‐Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer

Experimental Study on Transition Loss of On-Chip SIW Interconnects and Transmission Lines Using Two De-Embedding Reference Planes in 200 GHz Band Frequency

Occurrence Analysis of M-stage Classification of Bovine Digital Dermatitis Based on the Regular Foot Trimming Record in a Freestall Dairy Farm in Hokkaido

Improved Electron Transport Properties of Ga 1– x In x Sb Quantum Well Channel Using Strained‐Al 0.40 In 0.60 Sb/Al 1– y In y Sb Stepped Buffer

A 32Gbit/s 16QAM CMOS receiver in 300GHz band

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