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OBIC technique applied to wide bandgap semiconductors from 100 K up to 450 K

Semiconductor science and technology, 2017-04, Vol.32 (5), p.54001

2017

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Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses

2022 International Semiconductor Conference (CAS), 2022, p.195-198

2022

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Optical triggering of SiC thyristors using UV LEDs

Electronics letters, 2011-03, Vol.47 (7), p.459-460

2011

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Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current method

2015 International Semiconductor Conference (CAS), 2015, p.259-262

2015

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Edge Terminations for 4H-SiC Power Devices: A Critical Issue

Materials science forum, 2022-05, Vol.1062, p.570-575

2022

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Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

Materials science forum, 2013-01, Vol.740-742, p.938-941

2013

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Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

2015 International Semiconductor Conference (CAS), 2015, p.145-148

2015

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Subthreshold Drain Current Hysteresis of Planar SiC MOSFETs

Materials science forum, 2019-07, Vol.963, p.184-188

2019

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Vertical termination filled with adequate dielectric for SiC devices in HVDC applications

2015 International Semiconductor Conference (CAS), 2015, p.233-236

2015

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4H-SiC PiN Diode Protected by Narrow Field Rings Investigated by the Micro-OBIC Method

Materials science forum, 2022-05, Vol.1062, p.341-345

2022

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Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC

Materials science forum, 2009-01, Vol.600-603, p.639-642

2009

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High-Voltage SiC-JFET Fabrication and Full Characterization

Materials science forum, 2019-07, Vol.963, p.688-692

2019

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Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes

Materials science forum, 2009, Vol.600-603, p.1011-1014

2009

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Advanced Electrical Characterisation of High Voltage 4H-SiC PiN Diodes

Materials science forum, 2019-07, Vol.963, p.567-571, Article 567

2019

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Process Optimization for High Temperature SiC Lateral Devices

Materials science forum, 2009, Vol.615-617, p.585-588

2009

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Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions: Further optimization of VLS localized epitaxy

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.1600454

2017

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High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension

IEEE electron device letters, 2011-10, Vol.32 (10), p.1421-1423

2011

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Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC

Materials science forum, 2007, Vol.556-557, p.611-614, Article 611

2007

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A 4H-SiC high-power-density VJFET as controlled current limiter

IEEE transactions on industry applications, 2003-09, Vol.39 (5), p.1508-1513

2003

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Current Sensing for SiC Power Devices

Materials science forum, 2006-10, Vol.527-529, p.1215-1218

2006

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Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes

Materials science forum, 2018-06, Vol.924, p.593-596, Article 593

2018

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1.2 kV Pin Diodes with SiCrystal Epiwafer

Materials science forum, 2007, Vol.556-557, p.901-904

2007

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Very high sustainable forward current densities on 4H-SiC p-n junctions formed by VLS localized epitaxy of heavily Al-doped p++ emitters

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode

Materials science forum, 2018-06, Vol.924, p.577-580, Article 577

2018

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Realization and characterization of carbonic layers on 4H-SiC for electrochemical detections

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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OBIC technique applied to wide bandgap semiconductors from 100 K up to 450 K

Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses

Optical triggering of SiC thyristors using UV LEDs

Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current method

Edge Terminations for 4H-SiC Power Devices: A Critical Issue

Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

Subthreshold Drain Current Hysteresis of Planar SiC MOSFETs

Vertical termination filled with adequate dielectric for SiC devices in HVDC applications

4H-SiC PiN Diode Protected by Narrow Field Rings Investigated by the Micro-OBIC Method

Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC

High-Voltage SiC-JFET Fabrication and Full Characterization

Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes

Advanced Electrical Characterisation of High Voltage 4H-SiC PiN Diodes

Process Optimization for High Temperature SiC Lateral Devices

Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions: Further optimization of VLS localized epitaxy

High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension

Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC

A 4H-SiC high-power-density VJFET as controlled current limiter

Current Sensing for SiC Power Devices

Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes

1.2 kV Pin Diodes with SiCrystal Epiwafer

Very high sustainable forward current densities on 4H-SiC p-n junctions formed by VLS localized epitaxy of heavily Al-doped p++ emitters

Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode

Realization and characterization of carbonic layers on 4H-SiC for electrochemical detections

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