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InAlN/GaN heterostructure field-effect transistor DC and small-signal characteristics

Electronics letters, 2004-09, Vol.40 (20), p.1304-1305

2004

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Characteristics of In $_x$ Al $_1-x$ N–GaN High-Electron Mobility Field-Effect Transistor

IEEE transactions on electron devices, 2005-02, Vol.52 (2), p.146-150

2005

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Characteristics of In/sub x/Al/sub 1-x/N-GaN high-electron mobility field-effect transistor

IEEE transactions on electron devices, 2005-02, Vol.52 (2), p.146-150

2005

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Synthesis of Poly(2,6-dimethylphenylene oxide) in Carbon Dioxide

Macromolecules, 1996-01, Vol.29 (1), p.495-496

1996

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Ring-Opening Metathesis Polymerizations in Carbon Dioxide

Journal of macromolecular science. Part A, Pure and applied chemistry, 1996-07, Vol.33 (7), p.953-960

1996

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Resistive Switching in [Formula Omitted] Probed by a Metal-Insulator-Semiconductor Bipolar Transistor

IEEE electron device letters, 2012-01, Vol.33 (1), p.11

2012

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Resistive Switching in hbox HfO 2 Probed by a Metal-Insulator-Semiconductor Bipolar Transistor

IEEE electron device letters, 2012-01, Vol.33 (1), p.11-13

2012

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Resistive Switching in \hbox Probed by a Metal-Insulator-Semiconductor Bipolar Transistor

IEEE electron device letters, 2012-01, Vol.33 (1), p.11-13

2012

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First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Electronics letters, 2001-05, Vol.37 (11), p.715-716

2001

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Characteristics of In sub(x)Al sub(1-x)N-GaN high-electron mobility field-effect transistor

IEEE transactions on electron devices, 2005-01, Vol.52 (2)

2005

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InAlN/GaN heterostructure field-effect transistor DC and small-signal characteristics

Electronics letters, 2004-09, Vol.40 (20), p.1-1

2004

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Investigation of Ni/Au contacts on p-GaN annealed in different atmosphers

Journal of crystal growth, 2001-09, Vol.230 (3-4), p.564-568

2001

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Integrated high-voltage (HV) Schottky diode for power management ICs

2014 IEEE 28th Convention of Electrical & Electronics Engineers in Israel (IEEEI), 2014, p.1-5

2014

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InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

Journal of crystal growth, 2001, Vol.222 (4), p.701-705

2001

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First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Electronics letters, 2001-05, Vol.37 (11), p.1-1

2001

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Characterization of Al x Ga 1-x N/ AlyGa1-yN Distributed Bragg Reflectors Grown by Plasma Assisted Molecular Beam Epitaxy

MRS proceedings, 2001, Vol.693, Article I6.12.1

2001

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Characterization of AlxGa1-xN/ AlyGa1-yN Distributed Bragg Reflectors Grown by Plasma Assisted Molecular Beam Epitaxy

MRS proceedings, 2001, Vol.693

2001

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Formation and Characterization of Oxides on GaN surfaces

MRS proceedings, 2000, Vol.622, Article T6.20.1

2000

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Characterization of GaN MOS Structures Using Photoanodically Grown Oxides with Respect to FET Devices

MRS proceedings, 2000, Vol.639, Article G11.42

2000

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Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-polar and Ga-polar GaN Grown by Molecular Beam Epitaxy

MRS proceedings, 2001, Vol.693, Article I3.34.1

2001

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Point defects in γ-irradiated n-GaN

Semiconductor science and technology, 2000, Vol.15 (1), p.73-78

2000

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Graft smooth muscle cells specifically synthesize increased collagen

Journal of vascular surgery, 1995-08, Vol.22 (2), p.142-149

1995

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Electron Beam Pumping in Nitride Vertical Cavities with GaN/ Al 0.25 Ga 0.75 N Bragg Reflectors

MRS proceedings, 1999, Vol.595, Article F99W11.21

1999

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Electron Beam Pumping in Nitride Vertical Cavities with GaN/ Al0.25 Ga0.75 N Bragg Reflectors

MRS proceedings, 1999, Vol.595

1999

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Electron Beam Pumping in Nitride Vertical Cavities with GaN/ Al 0.25 Ga 0.75 N Bragg Reflectors

MRS Internet journal of nitride semiconductor research, 2000, Vol.5 (S1), p.654-660

2000

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InAlN/GaN heterostructure field-effect transistor DC and small-signal characteristics

Characteristics of In $_x$ Al $_1-x$ N–GaN High-Electron Mobility Field-Effect Transistor

Characteristics of In/sub x/Al/sub 1-x/N-GaN high-electron mobility field-effect transistor

Synthesis of Poly(2,6-dimethylphenylene oxide) in Carbon Dioxide

Ring-Opening Metathesis Polymerizations in Carbon Dioxide

Resistive Switching in [Formula Omitted] Probed by a Metal-Insulator-Semiconductor Bipolar Transistor

Resistive Switching in hbox HfO 2 Probed by a Metal-Insulator-Semiconductor Bipolar Transistor

Resistive Switching in \hbox Probed by a Metal-Insulator-Semiconductor Bipolar Transistor

First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Characteristics of In sub(x)Al sub(1-x)N-GaN high-electron mobility field-effect transistor

InAlN/GaN heterostructure field-effect transistor DC and small-signal characteristics

Investigation of Ni/Au contacts on p-GaN annealed in different atmosphers

Integrated high-voltage (HV) Schottky diode for power management ICs

InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Characterization of Al x Ga 1-x N/ AlyGa1-yN Distributed Bragg Reflectors Grown by Plasma Assisted Molecular Beam Epitaxy

Characterization of AlxGa1-xN/ AlyGa1-yN Distributed Bragg Reflectors Grown by Plasma Assisted Molecular Beam Epitaxy

Formation and Characterization of Oxides on GaN surfaces

Characterization of GaN MOS Structures Using Photoanodically Grown Oxides with Respect to FET Devices

Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-polar and Ga-polar GaN Grown by Molecular Beam Epitaxy

Point defects in γ-irradiated n-GaN

Graft smooth muscle cells specifically synthesize increased collagen

Electron Beam Pumping in Nitride Vertical Cavities with GaN/ Al 0.25 Ga 0.75 N Bragg Reflectors

Electron Beam Pumping in Nitride Vertical Cavities with GaN/ Al0.25 Ga0.75 N Bragg Reflectors

Electron Beam Pumping in Nitride Vertical Cavities with GaN/ Al 0.25 Ga 0.75 N Bragg Reflectors

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