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Formation of Surface Impurities on Lithium–Nickel–Manganese–Cobalt Oxides in the Presence of CO2 and H2O

Journal of the American Chemical Society, 2021-07, Vol.143 (27), p.10261-10274

2021

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Tetrakis(dimethylamido)hafnium Adsorption and Reaction on Hydrogen Terminated Si(100) Surfaces

Journal of physical chemistry. C, 2010-08, Vol.114 (33), p.14061-14075

2010

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Plasma enhanced chemical vapor deposition of Cr2O3 thin films using chromium hexacarbonyl (Cr(CO)6) precursor

Thin solid films, 2008-09, Vol.516 (21), p.7366-7372

2008

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Tetrakis(ethylmethylamido) Hafnium Adsorption and Reaction on Hydrogen-Terminated Si(100) Surfaces

Journal of physical chemistry. C, 2011-09, Vol.115 (38), p.18560-18571

2011

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Undulating topography of HfO2 thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide

AIChE journal, 2011-11, Vol.57 (11), p.2989-2996

2011

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Solubility thermodynamics of amine boranes in polar solvents

International journal of hydrogen energy, 2021-03, Vol.46 (18), p.10801-10808

2021

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Formation of Surface Impurities on Lithium–Nickel–Manganese–Cobalt Oxides in the Presence of CO 2 and H 2 O

Journal of the American Chemical Society, 2021-07, Vol.143 (27), p.10261-10274

2021

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Undulating topography of HfO 2 thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide

AIChE journal, 2011-11, Vol.57 (11), p.2989-2996

2011

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Undulating topography of HfO sigma ub 2thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide

AIChE journal, 2011-11, Vol.57 (11), p.2989-2989

2011

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Undulating topography of HfO^sub 2^ thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide

AIChE journal, 2011-11, Vol.57 (11), p.2989

2011

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Atomic layer deposition of HfO 2: Growth initiation study on metallic underlayers

Thin solid films, 2010, Vol.518 (15), p.4081-4086

2010

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Plasma enhanced chemical vapor deposition of Cr 2O 3 thin films using chromium hexacarbonyl (Cr(CO) 6) precursor

Thin solid films, 2008, Vol.516 (21), p.7366-7372

2008

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Effect of O2 flow ratio on the microstructure and stress of room temperature reactively sputtered RuOx thin films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-05, Vol.23 (3), p.452-459

2005

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Effect of O 2 flow ratio on the microstructure and stress of room temperature reactively sputtered RuO x thin films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-05, Vol.23 (3), p.452-459

2005

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Hydrogenated silicon nitride thin films deposited between 50 and 250 ° C using nitrogen/silane mixtures with helium dilution

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1999-01, Vol.17 (1), p.108-112

1999

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Comparison of Chemical Vapor Deposited Hafnium Dioxide and Silicon Doped Hafnium Dioxide using either O2, N2O, H2O, O2 plasma, or N2O plasma, and Hf (IV) t-butoxide

MRS proceedings, 2004, Vol.811

2004

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In situ ATR - FTIR spectroscopy of Hf(IV) tert butoxide adsorption on Si and Ge

MRS proceedings, 2006, Vol.917, Article 0917-E09-03

2006

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Comparison of Chemical Vapor Deposited Hafnium Dioxide and Silicon Doped Hafnium Dioxide using either O 2 , N 2 O, H 2 O, O 2 plasma, or N 2 O plasma, and Hf (IV) t-butoxide

MRS proceedings, 2004, Vol.811, Article D7.8

2004

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A Comparison of Plasma Enhanced Chemical Vapor Deposited and Thermally Deposited Hafnium Oxide and Hafnium Silicate Thin Film Using XPS

Surface science spectra, 2003-12, Vol.10 (1), p.182-194

2003

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Effect of O{sub 2} flow ratio on the microstructure and stress of room temperature reactively sputtered RuO{sub x} thin films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-05, Vol.23 (3)

2005

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Reaction Processes for Low Temperature (<150°C) Plasma Enhanced Deposition of Hydrogenated Amorphous Silicon Thin-Film Transistors on Transparent Plastic Substrates

MRS proceedings, 1998, Vol.508, Article 19

1998

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Silicon nitride PECVD at low temperature: film properties and plasma analysis

25th Anniversary, IEEE Conference Record - Abstracts. 1998 IEEE International Conference on Plasma Science (Cat. No.98CH36221), 1998, p.215

1998

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Molecular insight into interactions between the Taf14, Yng1 and Sas3 subunits of the NuA3 complex

Nature communications, 2024-06, Vol.15 (1), p.5335-11, Article 5335

2024

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Stepping stones or stone dead? Fecundity, pollen dispersal and mating patterns of roadside Qualea grandiflora Mart. trees

Conservation genetics, 2019-12, Vol.20 (6), p.1355-1367

2019

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Childhood asthma outcomes during the COVID‐19 pandemic: Findings from the PeARL multi‐national cohort

Allergy (Copenhagen), 2021-06, Vol.76 (6), p.1765-1775

2021

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Formation of Surface Impurities on Lithium–Nickel–Manganese–Cobalt Oxides in the Presence of CO2 and H2O

Tetrakis(dimethylamido)hafnium Adsorption and Reaction on Hydrogen Terminated Si(100) Surfaces

Plasma enhanced chemical vapor deposition of Cr2O3 thin films using chromium hexacarbonyl (Cr(CO)6) precursor

Tetrakis(ethylmethylamido) Hafnium Adsorption and Reaction on Hydrogen-Terminated Si(100) Surfaces

Undulating topography of HfO2 thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide

Solubility thermodynamics of amine boranes in polar solvents

Formation of Surface Impurities on Lithium–Nickel–Manganese–Cobalt Oxides in the Presence of CO 2 and H 2 O

Undulating topography of HfO 2 thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide

Undulating topography of HfO sigma ub 2thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide

Undulating topography of HfO^sub 2^ thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide

Atomic layer deposition of HfO 2: Growth initiation study on metallic underlayers

Plasma enhanced chemical vapor deposition of Cr 2O 3 thin films using chromium hexacarbonyl (Cr(CO) 6) precursor

Effect of O2 flow ratio on the microstructure and stress of room temperature reactively sputtered RuOx thin films

Effect of O 2 flow ratio on the microstructure and stress of room temperature reactively sputtered RuO x thin films

Hydrogenated silicon nitride thin films deposited between 50 and 250 ° C using nitrogen/silane mixtures with helium dilution

Comparison of Chemical Vapor Deposited Hafnium Dioxide and Silicon Doped Hafnium Dioxide using either O2, N2O, H2O, O2 plasma, or N2O plasma, and Hf (IV) t-butoxide

In situ ATR - FTIR spectroscopy of Hf(IV) tert butoxide adsorption on Si and Ge

Comparison of Chemical Vapor Deposited Hafnium Dioxide and Silicon Doped Hafnium Dioxide using either O 2 , N 2 O, H 2 O, O 2 plasma, or N 2 O plasma, and Hf (IV) t-butoxide

A Comparison of Plasma Enhanced Chemical Vapor Deposited and Thermally Deposited Hafnium Oxide and Hafnium Silicate Thin Film Using XPS

Effect of O{sub 2} flow ratio on the microstructure and stress of room temperature reactively sputtered RuO{sub x} thin films

Reaction Processes for Low Temperature (<150°C) Plasma Enhanced Deposition of Hydrogenated Amorphous Silicon Thin-Film Transistors on Transparent Plastic Substrates

Silicon nitride PECVD at low temperature: film properties and plasma analysis

Molecular insight into interactions between the Taf14, Yng1 and Sas3 subunits of the NuA3 complex

Stepping stones or stone dead? Fecundity, pollen dispersal and mating patterns of roadside Qualea grandiflora Mart. trees

Childhood asthma outcomes during the COVID‐19 pandemic: Findings from the PeARL multi‐national cohort

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