UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 26

Sortiert nach

Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

IEEE electron device letters, 2008-04, Vol.29 (4), p.287-289

2008

Link zum Volltext
IEEE_Xplore

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

IEEE electron device letters, 2008-10, Vol.29 (10), p.1098-1100

2008

Link zum Volltext
IEEE_Xplore

Current collapse in GaN heterojunction field effect transistors for high-voltage switching applications

2014 IEEE International Reliability Physics Symposium, 2014, p.6C.5.1-6C.5.4

2014

Link zum Volltext
IEEE_Xplore

Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors

2011 International Reliability Physics Symposium, 2011, p.4E.3.1-4E.3.4

2011

Link zum Volltext
IEEE_Xplore

Mission Profile Approach for the Calculation of GaN FET Reliability in Power Supply Applications (Invited)

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-7

2024

Link zum Volltext
IEEE_Xplore

A systems engineering approach to collaborative coordination of UAS in the NAS with safety guarantees

2014 Integrated Communications, Navigation and Surveillance Conference (ICNS) Conference Proceedings, 2014, p.U1-1-U1-12

2014

Link zum Volltext
IEEE_Xplore

Electromigration in strapped metal layers with large dimensions for lateral power device applications

2014 IEEE International Reliability Physics Symposium, 2014, p.2A.4.1-2A.4.4

2014

Link zum Volltext
IEEE_Xplore

Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors

2006 International Electron Devices Meeting, 2006, p.1-4

2006

Link zum Volltext
IEEE_Xplore

Strapped Cu interconnect for enhancing electromigration limit for power device application

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.368-371

2020

Link zum Volltext
IEEE_Xplore

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-5

2019

Link zum Volltext
IEEE_Xplore

A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors

IEEE electron device letters, 2008-07, Vol.29 (7), p.665-667

2008

Link zum Volltext
IEEE_Xplore

Current Crowding Impact on Electromigration in Al Interconnects

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-6

2019

Link zum Volltext
IEEE_Xplore

Application reliability validation of GaN power devices

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.20.5.1-20.5.4

2016

Link zum Volltext
IEEE_Xplore

Electromigration current limit relaxation for power device interconnects

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.68-71

2018

Link zum Volltext
IEEE_Xplore

Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors

2008 IEEE International Electron Devices Meeting, 2008, p.1-4

2008

Link zum Volltext
IEEE_Xplore

Impact of self-heating effect in hot carrier injection modeling

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.315-318

2018

Link zum Volltext
IEEE_Xplore

Glitch Recall: A Hardware Trojan Exploiting Natural Glitches in Logic Circuits

Information Security Applications, p.150-161

Link zum Volltext

Verfügbarkeit prüfen

Gate Current Degradation Mechanisms of GaN High Electron Mobility Transistors

2007 IEEE International Electron Devices Meeting, 2007, p.385-388

2007

Link zum Volltext
IEEE_Xplore

Evolution of structural defects associated with electrical degradationin AlGaN/GaN high electron mobility transistors

Applied physics letters, 2010-06, Vol.96 (23), p.233509-233509-3

2010

Link zum Volltext

Verfügbarkeit prüfen

RF power degradation of GaN High Electron Mobility Transistors

2010 International Electron Devices Meeting, 2010, p.20.2.1-20.2.4

2010

Link zum Volltext
IEEE_Xplore

Physics of electrical degradation in gallium nitride high electron mobility transistors

Joh, Jungwoo

2009

Link zum Volltext

Verfügbarkeit prüfen

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

2009 Reliability of Compound Semiconductors Digest (ROCS), 2009, p.3-6

2009

Link zum Volltext
IEEE_Xplore

Method for Estimation of the Channel Temperature of GaN High Electron Mobility Transistors

2007 ROCS Workshop[Reliability of Compound Semiconductors Digest], 2007, p.87-101

2007

Link zum Volltext
IEEE_Xplore

Correlation between RF and DC reliability in GaN high electron mobility transistors

2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop], 2008, p.185-194

2008

Link zum Volltext
IEEE_Xplore

Torsional Behavior of High-Strength Concrete Beams with Minimum Reinforcement Ratio

Advances in civil engineering, 2019-01, Vol.2019, p.1-11

2019

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 26

Suche als RSS-Feed

Aktive Filter

ThemaPhysics

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(5)
Mit Volltextzugriff
(25)

Publikationsform

Sprache

Englisch
(25)
Japanisch
(5)

Erscheinungsjahr

n.n

Thema

Science & Technology
(16)
Technology
(16)
Engineering
(15)
Engineering, Electrical & Electronic
(14)
Gallium Nitride
(14)
Stress
(13)
Hemts
(12)
Degradation
(10)
Modfets
(10)
Reliability
(9)
Voltage
(6)
Aluminum Gallium Nitride
(5)
Gan
(5)
Electromigration
(4)
Logic Gates
(4)
Radio Frequency
(4)
Switches
(4)
Temperature
(4)
Applied Sciences
(3)
Current Density
(3)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

IEEE Xplore
(21)
Ingenta
(9)
EZB Electronic Journals Library
(2)
ProQuest Dissertations & Theses A&I
(1)
AIP Journals
(1)
Springer Book Series (Lecture Notes)
(1)
Publisher website
(1)

2 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

Current collapse in GaN heterojunction field effect transistors for high-voltage switching applications

Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors

Mission Profile Approach for the Calculation of GaN FET Reliability in Power Supply Applications (Invited)

A systems engineering approach to collaborative coordination of UAS in the NAS with safety guarantees

Electromigration in strapped metal layers with large dimensions for lateral power device applications

Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors

Strapped Cu interconnect for enhancing electromigration limit for power device application

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs

A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors

Current Crowding Impact on Electromigration in Al Interconnects

Application reliability validation of GaN power devices

Electromigration current limit relaxation for power device interconnects

Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors

Impact of self-heating effect in hot carrier injection modeling

Glitch Recall: A Hardware Trojan Exploiting Natural Glitches in Logic Circuits

Gate Current Degradation Mechanisms of GaN High Electron Mobility Transistors

Evolution of structural defects associated with electrical degradationin AlGaN/GaN high electron mobility transistors

RF power degradation of GaN High Electron Mobility Transistors

Physics of electrical degradation in gallium nitride high electron mobility transistors

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

Method for Estimation of the Channel Temperature of GaN High Electron Mobility Transistors

Correlation between RF and DC reliability in GaN high electron mobility transistors

Torsional Behavior of High-Strength Concrete Beams with Minimum Reinforcement Ratio

Aktive Filter

Suchergebnisse filtern