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Switchable S = 1/2 and J = 1/2 Rashba bands in ferroelectric halide perovskites

Proceedings of the National Academy of Sciences - PNAS, 2014-05, Vol.111 (19), p.6900-6904

2014

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Hybrid Germanium Iodide Perovskite Semiconductors: Active Lone Pairs, Structural Distortions, Direct and Indirect Energy Gaps, and Strong Nonlinear Optical Properties

Journal of the American Chemical Society, 2015-06, Vol.137 (21), p.6804-6819

2015

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CsSnI3: Semiconductor or Metal? High Electrical Conductivity and Strong Near-Infrared Photoluminescence from a Single Material. High Hole Mobility and Phase-Transitions

Journal of the American Chemical Society, 2012-05, Vol.134 (20), p.8579-8587

2012

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Structural and Electrical Functionality of NiO Interfacial Films in Bulk Heterojunction Organic Solar Cells

Chemistry of materials, 2011-04, Vol.23 (8), p.2218-2226

2011

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Topological Oxide Insulator in Cubic Perovskite Structure

Scientific reports, 2013-04, Vol.3 (1), Article 1651

2013

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Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

Proceedings of the National Academy of Sciences - PNAS, 2015-06, Vol.112 (26), p.7897-7902

2015

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Hybridization Gap and Dresselhaus Spin Splitting in EuIr4In2Ge4

Angewandte Chemie (International ed.), 2015-08, Vol.54 (32), p.9186-9191

International ed. in English, 2015

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Defect mechanisms in the In2O3(ZnO)k system (k = 3, 5, 7, 9)

Journal of applied physics, 2012-11, Vol.112 (9)

2012

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Flux Crystal Growth of the Ternary Polygermanide LaPtGe2, a p-Type Metal

European journal of inorganic chemistry, 2015-04, Vol.2015 (12), p.2164-2172

2015

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First principles investigation of zinc-induced embrittlement in an aluminum grain boundary

Acta materialia, 2011-09, Vol.59 (15), p.6155-6167

2011

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Soluble Semiconductors AAsSe2 (A = Li, Na) with a Direct-Band-Gap and Strong Second Harmonic Generation: A Combined Experimental and Theoretical Study

Journal of the American Chemical Society, 2010-03, Vol.132 (10), p.3484-3495

2010

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Topological oxide insulator in cubic perovskite structure

Scientific reports, 2013-04, Vol.3 (1), p.1651

2013

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Synthesis in Ionic Liquids: [Bi2Te2Br](AlCl4), a Direct Gap Semiconductor with a Cationic Framework

Journal of the American Chemical Society, 2010-10, Vol.132 (42), p.14760-14762

2010

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Thallium Chalcohalides for X-ray and γ-ray Detection

Journal of the American Chemical Society, 2011-07, Vol.133 (26), p.10030-10033

2011

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Hydrogen-Promoted Grain Boundary Embrittlement and Vacancy Activity in Metals: Insights from Ab Initio Total Energy Calculatons

Materials transactions, 2005, Vol.46 (4), p.756-760

2005

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Atomic-Scale Understanding of the Interaction of Poly(3-hexylthiophene) with the NiO (100) Surface: A First-Principles Study

Journal of physical chemistry. C, 2014-09, Vol.118 (35), p.20298-20305

2014

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Orientation-Dependent Electronic Structures and Optical Properties of the P3HT:PCBM Interface: A First-Principles GW-BSE Study

Journal of physical chemistry. C, 2014-05, Vol.118 (19), p.10263-10270

2014

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Thallium Chalcogenide-Based Wide-Band-Gap Semiconductors: TlGaSe2 for Radiation Detectors

Chemistry of materials, 2011-06, Vol.23 (12), p.3120-3128

2011

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Semiconducting [(Bi4Te4Br2)(Al2Cl6–x Br x )]Cl2 and [Bi2Se2Br](AlCl4): Cationic Chalcogenide Frameworks from Lewis Acidic Ionic Liquids

Inorganic chemistry, 2013-05, Vol.52 (10), p.5657-5659

2013

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Direct Gap Semiconductors Pb2BiS2I3, Sn2BiS2I3, and Sn2BiSI5

Chemistry of materials, 2016-10, Vol.28 (20), p.7332-7343

2016

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Flexible Polar Nanowires of Cs5BiP4Se12 from Weak Interactions between Coordination Complexes: Strong Nonlinear Optical Second Harmonic Generation

Journal of the American Chemical Society, 2009-02, Vol.131 (7), p.2647-2656

2009

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CsCdInQ3 (Q = Se, Te): New Photoconductive Compounds As Potential Materials for Hard Radiation Detection

Chemistry of materials, 2013-05, Vol.25 (10), p.2089-2099

2013

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Photoconductivity in Tl6SI4: A Novel Semiconductor for Hard Radiation Detection

Chemistry of materials, 2013-07, Vol.25 (14), p.2868-2877

2013

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CsHgInS3: a New Quaternary Semiconductor for γ‑ray Detection

Chemistry of materials, 2012-11, Vol.24 (22), p.4434-4441

2012

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Tl2Hg3Q4 (Q = S, Se, and Te): High-Density, Wide-Band-Gap Semiconductors

Chemistry of materials, 2011-10, Vol.23 (19), p.4375-4383

2011

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Switchable S = 1/2 and J = 1/2 Rashba bands in ferroelectric halide perovskites

Hybrid Germanium Iodide Perovskite Semiconductors: Active Lone Pairs, Structural Distortions, Direct and Indirect Energy Gaps, and Strong Nonlinear Optical Properties

CsSnI3: Semiconductor or Metal? High Electrical Conductivity and Strong Near-Infrared Photoluminescence from a Single Material. High Hole Mobility and Phase-Transitions

Structural and Electrical Functionality of NiO Interfacial Films in Bulk Heterojunction Organic Solar Cells

Topological Oxide Insulator in Cubic Perovskite Structure

Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

Hybridization Gap and Dresselhaus Spin Splitting in EuIr4In2Ge4

Defect mechanisms in the In2O3(ZnO)k system (k = 3, 5, 7, 9)

Flux Crystal Growth of the Ternary Polygermanide LaPtGe2, a p-Type Metal

First principles investigation of zinc-induced embrittlement in an aluminum grain boundary

Soluble Semiconductors AAsSe2 (A = Li, Na) with a Direct-Band-Gap and Strong Second Harmonic Generation: A Combined Experimental and Theoretical Study

Topological oxide insulator in cubic perovskite structure

Synthesis in Ionic Liquids: [Bi2Te2Br](AlCl4), a Direct Gap Semiconductor with a Cationic Framework

Thallium Chalcohalides for X-ray and γ-ray Detection

Hydrogen-Promoted Grain Boundary Embrittlement and Vacancy Activity in Metals: Insights from Ab Initio Total Energy Calculatons

Atomic-Scale Understanding of the Interaction of Poly(3-hexylthiophene) with the NiO (100) Surface: A First-Principles Study

Orientation-Dependent Electronic Structures and Optical Properties of the P3HT:PCBM Interface: A First-Principles GW-BSE Study

Thallium Chalcogenide-Based Wide-Band-Gap Semiconductors: TlGaSe2 for Radiation Detectors

Semiconducting [(Bi4Te4Br2)(Al2Cl6–x Br x )]Cl2 and [Bi2Se2Br](AlCl4): Cationic Chalcogenide Frameworks from Lewis Acidic Ionic Liquids

Direct Gap Semiconductors Pb2BiS2I3, Sn2BiS2I3, and Sn2BiSI5

Flexible Polar Nanowires of Cs5BiP4Se12 from Weak Interactions between Coordination Complexes: Strong Nonlinear Optical Second Harmonic Generation

CsCdInQ3 (Q = Se, Te): New Photoconductive Compounds As Potential Materials for Hard Radiation Detection

Photoconductivity in Tl6SI4: A Novel Semiconductor for Hard Radiation Detection

CsHgInS3: a New Quaternary Semiconductor for γ‑ray Detection

Tl2Hg3Q4 (Q = S, Se, and Te): High-Density, Wide-Band-Gap Semiconductors

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