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Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer‐thin layers

Surface and interface analysis, 2017-02, Vol.49 (2), p.117-121

2017

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Influence of Mo interlayers on the microstructure of layers and reflective characteristics of Ru/Be multilayer mirrors

Optics express, 2022-12, Vol.30 (26), p.46749-46761

2022

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Thin film multilayer filters for solar EUV telescopes

Applied Optics, 2016-06, Vol.55 (17), p.4683

2016

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TOF-SIMS for carbon hybridization state analysis

Carbon (New York), 2022-01, Vol.186, p.83-90

2022

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28SiO2-Based Isotopically Enriched Silica Fiber

Inorganic materials, 2023-06, Vol.59 (6), p.591-596

2023

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Investigation of the thermo stability of aluminum thin-film filters with protective MoSi 2 cap layers

Applied optics (2004), 2019-01, Vol.58 (1), p.21

2019

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Growth of arsenic-doped cadmium telluride epilayers by metalorganic chemical vapor deposition

Inorganic materials, 2016-12, Vol.52 (12), p.1210-1214

2016

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Investigation of NV centers charge states in CVD diamond layers doped by nitrogen and phosphorous

Journal of luminescence, 2021-11, Vol.239, p.118404, Article 118404

2021

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Complex Diagnostics of Silicon-on-Insulator Layers after Ion Implantation and Annealing

Поверхность. Рентгеновские, синхротронные и нейтронные исследования, 2024-09 (5), p.61-68

2024

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Modification of the Ratio between sp.sup.2- to sp.sup.3-Hybridized Carbon Components in PECVD Diamond-Like Films

Semiconductors (Woodbury, N.Y.), 2020-09, Vol.54 (9), p.1047

2020

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Pulsed Laser Irradiation of Light-Emitting Structures with a

Physics of the solid state, 2021-11, Vol.63 (11), p.1593

2021

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Optical investigation of as-grown NV centers in heavily nitrogen doped delta layers in CVD diamond

Materials today communications, 2020-09, Vol.24, p.101019, Article 101019

2020

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Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge Substrates

Semiconductors (Woodbury, N.Y.), 2019-10, Vol.53 (10), p.1318

2019

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Production of double-layer epitaxial structures based on the solid solution of the Cd-Hg-Te system using a combination of LPE and MOCVD techniques

Inorganic materials, 2008-12, Vol.44 (12), p.1305-1311

2008

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TOF-SIMS study on surface modification of reed switch blades by pulsing nitrogen plasma

Applied surface science, 2013, Vol.265, p.642-647

2013

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Quantitative calibration and germanium SIMS depth profiling in Ge x Si1 − x /Si heterostructures

Semiconductors (Woodbury, N.Y.), 2014-08, Vol.48 (8), p.1109-1117

2014

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Si{sub 3}N{sub 4} layers for the in-situ passivation of GaN-based HEMT structures

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11)

2015

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Low-temperature deposition of SiN x Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon

Semiconductors (Woodbury, N.Y.), 2017-01, Vol.51 (11), p.1449-1452

2017

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Coulomb centers assisted tunneling in a δ-doped triple barrier SiGe heterostructure

Physica. E, Low-dimensional systems & nanostructures, 2014, Vol.57, p.42-46

2014

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A new approach to the diagnostics of nanoislands in Ge x Si1 − x /Si heterostructures by secondary ion mass spectrometry

Technical physics letters, 2014-07, Vol.40 (7), p.601-605

2014

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Ion-plasma treatment of reed switch contacts: A study by time-of-flight secondary ion mass spectrometry

Journal of analytical chemistry (New York, N.Y.), 2014-12, Vol.69 (13), p.1245-1251

2014

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Towards 0.99999 28Si

Solid state communications, 2012, Vol.152 (6), p.455-457

2012

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Epitaxially Grown Monoisotopic Si, Ge, and Si{sub 1–x}Ge{sub x} Alloy Layers: Production and Some Properties

Semiconductors (Woodbury, N.Y.), 2016-03, Vol.50 (3)

2016

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Epitaxially Grown Monoisotopic Si, Ge, and Si1–x Ge x Alloy Layers: Production and Some Properties

Semiconductors (Woodbury, N.Y.), 2016-03, Vol.50 (3), p.345-348

2016

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Composition and structural perfection of (AIII,Mn)BV and MnBV (A = Ga, In; B = Sb, As, P) nanolayers

Inorganic materials, 2012-06, Vol.48 (6), p.553-558

2012

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Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer‐thin layers

Influence of Mo interlayers on the microstructure of layers and reflective characteristics of Ru/Be multilayer mirrors

Thin film multilayer filters for solar EUV telescopes

TOF-SIMS for carbon hybridization state analysis

28SiO2-Based Isotopically Enriched Silica Fiber

Investigation of the thermo stability of aluminum thin-film filters with protective MoSi 2 cap layers

Growth of arsenic-doped cadmium telluride epilayers by metalorganic chemical vapor deposition

Investigation of NV centers charge states in CVD diamond layers doped by nitrogen and phosphorous

Complex Diagnostics of Silicon-on-Insulator Layers after Ion Implantation and Annealing

Modification of the Ratio between sp.sup.2- to sp.sup.3-Hybridized Carbon Components in PECVD Diamond-Like Films

Pulsed Laser Irradiation of Light-Emitting Structures with a

Optical investigation of as-grown NV centers in heavily nitrogen doped delta layers in CVD diamond

Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge Substrates

Production of double-layer epitaxial structures based on the solid solution of the Cd-Hg-Te system using a combination of LPE and MOCVD techniques

TOF-SIMS study on surface modification of reed switch blades by pulsing nitrogen plasma

Quantitative calibration and germanium SIMS depth profiling in Ge x Si1 − x /Si heterostructures

Si{sub 3}N{sub 4} layers for the in-situ passivation of GaN-based HEMT structures

Low-temperature deposition of SiN x Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon

Coulomb centers assisted tunneling in a δ-doped triple barrier SiGe heterostructure

A new approach to the diagnostics of nanoislands in Ge x Si1 − x /Si heterostructures by secondary ion mass spectrometry

Ion-plasma treatment of reed switch contacts: A study by time-of-flight secondary ion mass spectrometry

Towards 0.99999 28Si

Epitaxially Grown Monoisotopic Si, Ge, and Si{sub 1–x}Ge{sub x} Alloy Layers: Production and Some Properties

Epitaxially Grown Monoisotopic Si, Ge, and Si1–x Ge x Alloy Layers: Production and Some Properties

Composition and structural perfection of (AIII,Mn)BV and MnBV (A = Ga, In; B = Sb, As, P) nanolayers

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