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A 0.1-to-1.5GHz 4.2mW All-Digital DLL with Dual Duty-Cycle Correction Circuit and Update Gear Circuit for DRAM in 66nm CMOS Technology

2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, 2008, p.282-613

2008

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0.15 μm gate length MHEMT technology for 77GHz automotive radar applications

2004

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0.15 /spl mu/m gate length InAlAs/InGaAs power metamorphic HEMT on GaAs substrate with extremely low noise characteristics

International Conference onIndium Phosphide and Related Materials, 2003, 2003, p.114-117

2003

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0.15 /spl mu/m gate length MHEMT technology for 77 GHz automotive radar applications

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.24-27

2004

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A 0.25-[micro]m 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1472

2002

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A 0.25 mu m 3.0 V 1T1C 32 Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme

Digest of technical papers - IEEE International Solid-State Circuits Conference, 2002-01, p.124-125+430-431

2002

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A 0.25-mum 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1472-1478

2002

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A 0.25-/spl mu/m 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1472-1478

2002

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A 0.25 /spl mu/m 3.0 V 1T1C 32 Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), 2002, Vol.1, p.162-457 vol.1

2002

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A 0.25/spl mu/m 3.0V 1T1C 32Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), 2002, Vol.2, p.124-431

2002

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A 0.25-μm 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1472-1478

2002

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A 0.25 µm Complementary Metal Oxide Semiconductor Field Effect Transistor (CMOSFET) using Halo Implantation for 1 Gbit Dynamic Random Access Memory (DRAM)

Japanese Journal of Applied Physics, 1996-02, Vol.35 (2S), p.865

1996

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Al 0.30 Ga 0.70 N/GaN/Al 0.07 Ga 0.93 N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/mm

Chinese physics letters, 2015-11, Vol.32 (11), p.117202

2015

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Al 0.4 Ga 0.6 N/Al 0.15 Ga 0.85 N Separate Absorption and Multiplication Solar-Blind Avalanche Photodiodes With a One-Dimensional Photonic Crystal Filter

IEEE photonics journal, 2016-08, Vol.8 (4), p.1-7

2016

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Al 0.4Ga 0.6N/Al 0.15Ga 0.85N Separate Absorption and Multiplication Solar-Blind Avalanche Photodiodes With a One-Dimensional Photonic Crystal Filter

IEEE photonics journal, 2016-08, Vol.8 (4), p.1-7

2016

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A 0.6 V 12 b 10 MS/s Low-Noise Asynchronous SAR-Assisted Time-Interleaved SAR (SATI-SAR) ADC

IEEE journal of solid-state circuits, 2016-08, Vol.51 (8), p.1826-1839

2016

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A 0.6-V 12-bit 13.2-fJ/conversion-step SAR ADC with time-domain VCDL-based comparator and metastability immunity technique

Microelectronics, 2022-04, Vol.122, p.105406, Article 105406

2022

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0.66 µm InGaP/InGaAlP Single Quantum Well Microdisk Lasers

Japanese Journal of Applied Physics, 1998-06, Vol.37 (6A), p.L643

1998

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0.75% ropivacaine may be a suitable drug in pregnant women undergoing urgent cesarean delivery during labor analgesia period

BMC anesthesiology, 2024-06, Vol.24 (1), p.1-9, Article 212

2024

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( Li 0.84 Fe 0.16 ) OHFe 0.98 Se superconductor: Ion-exchange synthesis of large single-crystal and highly two-dimensional electron properties

Physical review. B, Condensed matter and materials physics, 2015-08, Vol.92 (6), Article 064515

2015

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0.85THz可调谐式折叠波导再生反馈真空电子学振荡器的理论及实验研究

红外与毫米波学报, 2020, Vol.39 (3), p.284-289

2020

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OS 01-08 IMPACT OF HYPERTENSION TREATMENT ON IMMUNOSENESCENCE PARAMETERS

Journal of hypertension, 2016-09, Vol.34 Suppl 1 - ISH 2016 Abstract Book (Supplement 1), p.e46-e46

2016

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0778 A Novel Endotype of Pediatric Obstructive Sleep Apnea Syndrome Revealed Using K-Means Clustering

Sleep (New York, N.Y.), 2024-04, Vol.47 (Supplement_1), p.A333-A334

2024

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0903 CPAP adherence rate in patients with ischemic stroke

Sleep (New York, N.Y.), 2023-05, Vol.46 (Supplement_1), p.A398-A398

2023

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A 1.0 Gbps clock and data recovery circuit with two-XOR phase-frequency detector

Proceedings of Second IEEE Asia Pacific Conference on ASICs. AP-ASIC 2000 (Cat. No.00EX434), 2000, p.199-202

2000

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