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Impact of Gate Edge Roughness Variability on FinFET and Gate-All-Around Nanowire FET

IEEE electron device letters, 2019-04, Vol.40 (4), p.510-513

2019

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A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2020-05, Vol.67 (5), p.1-7

2020

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Scaling Challenges of Nanosheet Field-Effect Transistors Into Sub-2 nm Nodes

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.479-485

2024

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Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes

Computer physics communications, 2015-04, Vol.189, p.31-36

2015

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Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor

Journal of applied physics, 2017-12, Vol.122 (22)

2017

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Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects

IOP conference series. Materials Science and Engineering, 2019, Vol.504 (1)

2019

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Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2178-2185

2009

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The role of probe oxide in local surface conductivity measurements

Journal of applied physics, 2015-05, Vol.117 (17)

2015

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Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53Ga0.47As GAA MOSFET

IEEE electron device letters, 2013-02, Vol.34 (2), p.205-207, Article 205

2013

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The effect of interface roughness scattering on Si SOI FinFET with Ando's and extended Prange and Nee model

Journal of physics. Conference series, 2015-10, Vol.647 (1), p.12065

2015

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Benchmarking of Scaled InGaAs Implant-Free NanoMOSFETs

IEEE transactions on electron devices, 2008-09, Vol.55 (9), p.2297-2306

2008

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Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures

Microelectronics and reliability, 2010-03, Vol.50 (3), p.360-364

2010

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Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study

IEEE transactions on nanotechnology, 2009-03, Vol.8 (2), p.159-166

2009

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Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold

Journal of low-power electronics, 2015-06, Vol.11 (2), p.256-262

2015

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Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO 2 interface charges and quantum mechanical effects

IOP conference series. Materials Science and Engineering, 2019-04, Vol.504, p.12021

2019

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Electron velocity decline in Si nanoscales MOSFETs with the shortening of gate length

Journal of physics. Conference series, 2010-07, Vol.242 (1), p.012011

2010

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The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation

Microelectronics and reliability, 2020-12, Vol.115, p.113965, Article 113965

2020

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Effect of interface state trap density on the performance of scaled surface channel In0.3Ga0.7 As MOSFETs

Journal of physics. Conference series, 2009-11, Vol.193 (1), p.012122

2009

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Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.1209-1216

2016

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Simulation of implant free III-V MOSFETs for high performance low power Nano-CMOS applications

Microelectronic engineering, 2007-09, Vol.84 (9), p.2398-2403

2007

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Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS

Solid-state electronics, 2018-04, Vol.142 (C)

2018

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Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

IEEE transactions on computer-aided design of integrated circuits and systems, 2011-06, Vol.30 (6), p.841-851

2011

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Self-forces in 3D finite element Monte Carlo simulations of a 10.7 nm gate length SOI FinFET

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2014, p.185-188

2014

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Monte Carlo Simulation of Implant Free InGaAs MOSFET

Journal of physics. Conference series, 2006-05, Vol.38 (1), p.200-203

2006

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Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: a Monte Carlo simulation study

Mathematics and computers in simulation, 2003-03, Vol.62 (3), p.357-366

2003

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Impact of Gate Edge Roughness Variability on FinFET and Gate-All-Around Nanowire FET

A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs

Scaling Challenges of Nanosheet Field-Effect Transistors Into Sub-2 nm Nodes

Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes

Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor

Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects

Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices

The role of probe oxide in local surface conductivity measurements

Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53Ga0.47As GAA MOSFET

The effect of interface roughness scattering on Si SOI FinFET with Ando's and extended Prange and Nee model

Benchmarking of Scaled InGaAs Implant-Free NanoMOSFETs

Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures

Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study

Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold

Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO 2 interface charges and quantum mechanical effects

Electron velocity decline in Si nanoscales MOSFETs with the shortening of gate length

The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation

Effect of interface state trap density on the performance of scaled surface channel In0.3Ga0.7 As MOSFETs

Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs

Simulation of implant free III-V MOSFETs for high performance low power Nano-CMOS applications

Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS

Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

Self-forces in 3D finite element Monte Carlo simulations of a 10.7 nm gate length SOI FinFET

Monte Carlo Simulation of Implant Free InGaAs MOSFET

Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: a Monte Carlo simulation study

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