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Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition

Journal of applied physics, 2014-02, Vol.115 (7)

2014

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Detection of oxygen ion drift in Pt/Al2O3/TiO2/Pt RRAM using interface-free single-layer graphene electrodes

Carbon (New York), 2014-08, Vol.75, p.209-216

2014

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Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition

Journal of applied physics, 2013-11, Vol.114 (17)

2013

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Resistive switching of a TaOx/TaON double layer via ionic control of carrier tunneling

Applied physics letters, 2014-04, Vol.104 (15)

2014

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Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

Applied physics letters, 2014-01, Vol.104 (4)

2014

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Reduction of RuO2 Film to Metallic Ru Film Using Atomic Layer Deposition under Different Oxygen Partial Pressure

Jpn J Appl Phys, 2013-05, Vol.52 (5), p.05FB05-05FB05-4

2013

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Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2012-01, Vol.30 (1)

2012

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Resolution of methoxyphenamine and its analogues on a chiral stationary phase based on (+)‐(18‐crown‐6)‐2,3,11,12‐tetracarboxylic acid

Journal of separation science, 2018-12, Vol.41 (23), p.4281-4285

2018

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Nonlinear and complementary resistive switching behaviors of Au/Ti/TaOx/TiN devices dependent on Ti thicknesses

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-09, Vol.33 (5)

2015

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Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2015-09, Vol.33 (5)

2015

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Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma

Physica status solidi. A, Applications and materials science, 2015-03, Vol.212 (3), p.674-679

2015

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Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2016-05, Vol.34 (3)

2016

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Resistive switching behaviors of Ti nano-layer embedded TaO x -based devices

Current applied physics, 2017-02, Vol.17 (2), p.230-234

2017

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Stabilization of Ni conductive filaments using NH3 plasma treatment for electrochemical metallization memory

2015-08

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Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments

Current Applied Physics, 2015, 15(9), , pp.1005-1009

2015

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Characteristics of WN{sub x}C{sub y} films deposited using remote plasma atomic layer deposition with ({sup Me}Cp)W(CO){sub 2}(NO) for Cu diffusion barrier

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2015-09, Vol.33 (5)

2015

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Investigation of the Flatband Voltage (VFB) Shift of Al2O3 on N2 Plasma Treated Si Substrate

Journal of nanoscience and nanotechnology, 2013-09, Vol.13 (9), p.6275-6279

2013

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Detection of oxygen ion drift in Pt/Al sub(2)O sub(3)/TiO sub(2)/Pt RRAM using interface-free single-layer graphene electrodes

Carbon (New York), 2014-08, Vol.75, p.209-216

2014

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Growth behavior and structural characteristics of TiO sub(2) thin films using (CpN)Ti(NMe sub(2)) sub(2) and oxygen remote plasma

Physica status solidi. A, Applications and materials science, 2015-03, Vol.212 (3), p.674-679

2015

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Growth behavior and structural characteristics of TiO 2 thin films using (CpN)Ti(NMe 2 ) 2 and oxygen remote plasma: Growth behavior and structural characteristics of TiO 2 thin films

Physica status solidi. A, Applications and materials science, 2015-03, Vol.212 (3), p.674-679

2015

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Stabilization of Ni conductive filaments using NH 3 plasma treatment for electrochemical metallization memory

RSC advances, 2015, Vol.5 (84), p.68900-68905

2015

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Detection of oxygen ion drift in Pt/Al2O/TiO2/Pt RRAM using interface-free single-layer graphene electrodes

Carbon (New York), 2014, Vol.75, p.209-216

2014

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Resistive switching behaviors of Ti nano-layer embedded TaOx-based devices

Current Applied Physics, 2017, 17(2), , pp.230-234

2017

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Improvement of thermal stability of nickel silicide film using NH3 plasma treatment

Japanese Journal of Applied Physics, 2014-09, Vol.53 (9)

2014

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Effect of a Ti capping layer on thermal stability of NiSi formed from Ni thin films deposited by metal-organic chemical vapor deposition using a Ni(iPr-DAD)2 precursor

Japanese Journal of Applied Physics, 2015-02, Vol.54 (2), p.25501

2015

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Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition

Detection of oxygen ion drift in Pt/Al2O3/TiO2/Pt RRAM using interface-free single-layer graphene electrodes

Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition

Resistive switching of a TaOx/TaON double layer via ionic control of carrier tunneling

Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

Reduction of RuO2 Film to Metallic Ru Film Using Atomic Layer Deposition under Different Oxygen Partial Pressure

Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications

Resolution of methoxyphenamine and its analogues on a chiral stationary phase based on (+)‐(18‐crown‐6)‐2,3,11,12‐tetracarboxylic acid

Nonlinear and complementary resistive switching behaviors of Au/Ti/TaOx/TiN devices dependent on Ti thicknesses

Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier

Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma

Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition

Resistive switching behaviors of Ti nano-layer embedded TaO x -based devices

Stabilization of Ni conductive filaments using NH3 plasma treatment for electrochemical metallization memory

Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments

Characteristics of WN{sub x}C{sub y} films deposited using remote plasma atomic layer deposition with ({sup Me}Cp)W(CO){sub 2}(NO) for Cu diffusion barrier

Investigation of the Flatband Voltage (VFB) Shift of Al2O3 on N2 Plasma Treated Si Substrate

Detection of oxygen ion drift in Pt/Al sub(2)O sub(3)/TiO sub(2)/Pt RRAM using interface-free single-layer graphene electrodes

Growth behavior and structural characteristics of TiO sub(2) thin films using (CpN)Ti(NMe sub(2)) sub(2) and oxygen remote plasma

Growth behavior and structural characteristics of TiO 2 thin films using (CpN)Ti(NMe 2 ) 2 and oxygen remote plasma: Growth behavior and structural characteristics of TiO 2 thin films

Stabilization of Ni conductive filaments using NH 3 plasma treatment for electrochemical metallization memory

Detection of oxygen ion drift in Pt/Al2O/TiO2/Pt RRAM using interface-free single-layer graphene electrodes

Resistive switching behaviors of Ti nano-layer embedded TaOx-based devices

Improvement of thermal stability of nickel silicide film using NH3 plasma treatment

Effect of a Ti capping layer on thermal stability of NiSi formed from Ni thin films deposited by metal-organic chemical vapor deposition using a Ni(iPr-DAD)2 precursor

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