UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Tunneling Field-Effect Transistor: Capacitance Components and Modeling

IEEE electron device letters, 2010-07, Vol.31 (7), p.752-754

2010

Volltextzugriff (PDF)

Enhancing CMOS transistor performance using lattice-mismatched materials in source/drain regions

Semiconductor science and technology, 2007-01, Vol.22 (1), p.S177-S182

Yeo, Yee-Chia

2007

Volltextzugriff (PDF)

High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform

Optics express, 2018-04, Vol.26 (8), p.10305-10314

2018

Volltextzugriff (PDF)

Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1-x Sn x ) Fin Structure

Scientific reports, 2017-05, Vol.7 (1), p.1835-9, Article 1835

2017

Volltextzugriff (PDF)

All-GaN Power Integration: Devices to Functional Subcircuits and Converter ICs

IEEE journal of emerging and selected topics in power electronics, 2020-03, Vol.8 (1), p.31-41

2020

Volltextzugriff (PDF)

Design and Experimental Demonstration of Integrated Over-Current Protection Circuit for GaN DC-DC Converters

IEEE journal of emerging and selected topics in power electronics, 2020-12, Vol.8 (4), p.4270-4278

2020

Volltextzugriff (PDF)

Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials

Scientific reports, 2012-04, Vol.2 (1), p.360-360, Article 360

2012

Volltextzugriff (PDF)

A Variational Approach to the Two-Dimensional Nonlinear Poisson's Equation for the Modeling of Tunneling Transistors

IEEE electron device letters, 2008-11, Vol.29 (11), p.1252-1255

2008

Volltextzugriff (PDF)

Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current

IEEE electron device letters, 2009-09, Vol.30 (9), p.981-983

2009

Volltextzugriff (PDF)

Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n-Ge Contacts

IEEE electron device letters, 2012-06, Vol.33 (6), p.773-775

2012

Volltextzugriff (PDF)

Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration

Scientific reports, 2017-11, Vol.7 (1), p.14632-6, Article 14632

2017

Volltextzugriff (PDF)

Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon-Carbon Source/Drain Regions

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2910-2917

2007

Volltextzugriff (PDF)

Realistic Trap Configuration Scheme With Fabrication Processes in Consideration for the Simulations of AlGaN/GaN MIS-HEMT Devices

IEEE journal of emerging and selected topics in power electronics, 2016-09, Vol.4 (3), p.720-729

2016

Volltextzugriff (PDF)

A Simulation Study of Graphene-Nanoribbon Tunneling FET With Heterojunction Channel

IEEE electron device letters, 2010-06, Vol.31 (6), p.555-557

2010

Volltextzugriff (PDF)

Sub-400 °C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1640-1648

2013

Volltextzugriff (PDF)

Development of GaN Power IC Platform and All GaN DC-DC Buck Converter IC

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, p.271-274

2019

Volltextzugriff (PDF)

Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth

Optics express, 2017-07, Vol.25 (14), p.15818-15827

2017

Volltextzugriff (PDF)

Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band

Optics express, 2019-09, Vol.27 (19), p.26924-26939

2019

Volltextzugriff (PDF)

Sub-0.1-eV Effective Schottky-Barrier Height for NiSi on n-Type Si (100) Using Antimony Segregation

IEEE electron device letters, 2007-08, Vol.28 (8), p.703-705

2007

Volltextzugriff (PDF)

Fermi pinning-induced thermal instability of metal-gate work functions

IEEE electron device letters, 2004-05, Vol.25 (5), p.337-339

2004

Volltextzugriff (PDF)

High-Performance Germanium \Omega -Gate MuGFET With Schottky-Barrier Nickel Germanide Source/Drain and Low-Temperature Disilane-Passivated Gate Stack

IEEE electron device letters, 2012-10, Vol.33 (10), p.1336-1338

2012

Volltextzugriff (PDF)

Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range

Optics express, 2017-08, Vol.25 (16), p.18502-18507

2017

Volltextzugriff (PDF)

Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique

Optics express, 2015-07, Vol.23 (14), p.18611-18619

2015

Volltextzugriff (PDF)

GeSn lateral p-i-n photodetector on insulating substrate

Optics express, 2018-06, Vol.26 (13), p.17312-17321

2018

Volltextzugriff (PDF)

Nickel-Silicide Contact Technology With Dual Near-Band-Edge Barrier Heights and Integration in CMOS FinFETs With Single Mask

IEEE electron device letters, 2010-09, Vol.31 (9), p.918-920

2010

Volltextzugriff (PDF)

1 – 25 von 552

Suche als RSS-Feed

Aktive Filter

ThemaPhysics, Applied

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(327)
Mit Volltextzugriff
(461)

Publikationsform

Sprache

Englisch
(534)
Japanisch
(7)

Erscheinungsjahr

n.n

Thema

Science & Technology
(211)
Technology
(145)
Engineering
(123)
Engineering, Electrical & Electronic
(122)
Silicon
(100)
Transistors
(79)
Electronics
(73)
Exact Sciences And Technology
(72)
Applied Sciences
(71)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(71)
Logic Gates
(69)
Mosfets
(59)
Physical Sciences
(56)
Annealing
(52)
Mosfet Circuits
(52)
Capacitive Sensors
(51)
Life Sciences & Biomedicine
(48)
Implants
(42)
Substrates
(42)
Devices
(41)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Tunneling Field-Effect Transistor: Capacitance Components and Modeling

Enhancing CMOS transistor performance using lattice-mismatched materials in source/drain regions

High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform

Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1-x Sn x ) Fin Structure

All-GaN Power Integration: Devices to Functional Subcircuits and Converter ICs

Design and Experimental Demonstration of Integrated Over-Current Protection Circuit for GaN DC-DC Converters

Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials

A Variational Approach to the Two-Dimensional Nonlinear Poisson's Equation for the Modeling of Tunneling Transistors

Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current

Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n-Ge Contacts

Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration

Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon-Carbon Source/Drain Regions

Realistic Trap Configuration Scheme With Fabrication Processes in Consideration for the Simulations of AlGaN/GaN MIS-HEMT Devices

A Simulation Study of Graphene-Nanoribbon Tunneling FET With Heterojunction Channel

Sub-400 °C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS

Development of GaN Power IC Platform and All GaN DC-DC Buck Converter IC

Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth

Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band

Sub-0.1-eV Effective Schottky-Barrier Height for NiSi on n-Type Si (100) Using Antimony Segregation

Fermi pinning-induced thermal instability of metal-gate work functions

High-Performance Germanium \Omega -Gate MuGFET With Schottky-Barrier Nickel Germanide Source/Drain and Low-Temperature Disilane-Passivated Gate Stack

Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range

Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique

GeSn lateral p-i-n photodetector on insulating substrate

Nickel-Silicide Contact Technology With Dual Near-Band-Edge Barrier Heights and Integration in CMOS FinFETs With Single Mask

Aktive Filter

Suchergebnisse filtern