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Time-dependent Hinode/EIS Atlas of a Coronal Mass Ejection Containing Cool Material

The Astrophysical journal, 2024-08, Vol.970 (2), p.182

2024

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Using the Cartwheel CME to Predict Off-limb Observations of CMEs for New and Upcoming UV and EUV Spectrometers

The Astrophysical journal, 2024-10, Vol.974 (1), p.32

2024

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Simulating Compressive Stream Interaction Regions during Parker Solar Probe’s First Perihelion Using Stream-aligned Magnetohydrodynamics

The Astrophysical journal, 2024-02, Vol.962 (2), p.182

2024

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Time-resolved cathodoluminescence measurement of the effects of α-particle-related damage on minority hole lifetime in free-standing n-GaN

Applied physics letters, 2024-10, Vol.125 (15)

2024

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Highly radiative nature of ultra-thin c-plane Al-rich AlGaN/AlN quantum wells for deep ultraviolet emitters

Applied physics letters, 2019-03, Vol.114 (10)

2019

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AlGaN devices and growth of device structures

Journal of materials science, 2015-05, Vol.50 (9), p.3267-3307

2015

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Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (011̄2) sapphire by metalorganic chemical vapor deposition

Journal of applied physics, 1999-03, Vol.85 (5), p.2595-2602

1999

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Impact of oxygen source parameters on homoepitaxial ZnO films grown at low-temperature on Zn-polar substrates

Journal of alloys and compounds, 2013-03, Vol.552, p.127-130

2013

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High quantum efficiency deep ultraviolet 4H-SiC photodetectors

Electronics letters, 2013-12, Vol.49 (25), p.1629-1630

2013

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Formalizing chemical physics using the Lean theorem prover

Digital discovery, 2024-02, Vol.3 (2), p.264-28

2024

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Plasma-assisted molecular beam epitaxy of strain-compensated a-plane InGaN/AlGaN superlattices

Physica status solidi. C, 2015-04, Vol.12 (4-5), p.434-438

2015

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Deep ultraviolet enhanced silicon carbide avalanche photodiodes

2016 74th Annual Device Research Conference (DRC), 2016, p.1-2

2016

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Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance

Applied physics letters, 2009-06, Vol.94 (24)

2009

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First all-HVPE grown InGaN/InGaN MQW LED structures for 460-510 nm

Physica status solidi. C, 2008-05, Vol.5 (6), p.2244-2246

2008

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InN layers grown by the HVPE

Physica status solidi. C, 2008-05, Vol.5 (6), p.1792-1794

2008

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Semiconductor ultraviolet emitters and detectors with potential for wireless communications

2012 IEEE Photonics Society Summer Topical Meeting Series, 2012, p.134-135

Wraback, M.

2012

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Double heterostructure ultraviolet light emitting diodes with nanometer scale compositionally inhomogeneous active regions

Physica status solidi. C, 2008-05, Vol.5 (6), p.2303-2305

2008

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Experimental and Theoretical Studies of Transient Electron Velocity Overshoot in GaN

Physica status solidi. B. Basic research, 2002-12, Vol.234 (3), p.810-816

2002

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Time-resolved photoluminescence studies of high-brightness 340-nm LEDs under current injection

Physica status solidi. C, 2008-05, Vol.5 (6), p.2296-2298

2008

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Luminescence properties of AlxGa1-xN(0.4 < x < 0.5)/AlyGa1-yN (0.6 < y ≤ 1) quantum structures grown by gas source molecular beam epitaxy

Physica status solidi. C, 2008-05, Vol.5 (6), p.1852-1854

2008

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Intensity-dependent photoluminescence studies of the electric field in N-face and In-face InN/InGaN multiple quantum wells

Physica status solidi. C, 2008-05, Vol.5 (6), p.1846-1848

2008

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Enhanced THz emission from c -plane In x Ga 1− x N due to piezoelectric field-induced electron transport

Applied physics letters, 2012-05, Vol.100 (19), p.191110-191110-4

2012

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Enhanced THz emission from c -plane In x Ga1− x N due to piezoelectric field-induced electron transport

Applied physics letters, 2012-05, Vol.100 (19)

2012

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AlGaN/SiC Heterojunction Ultraviolet Photodiodes

Materials Science Forum, 2016-05, Vol.858, p.1206-1209

2016

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Defect density dependence of luminescence efficiency and lifetimes in AlGaN active regions exhibiting enhanced emission from nanoscale compositional inhomogeneities

Physica status solidi. C, 2006-06, Vol.3 (6), p.2125-2128

2006

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Time-dependent Hinode/EIS Atlas of a Coronal Mass Ejection Containing Cool Material

Using the Cartwheel CME to Predict Off-limb Observations of CMEs for New and Upcoming UV and EUV Spectrometers

Simulating Compressive Stream Interaction Regions during Parker Solar Probe’s First Perihelion Using Stream-aligned Magnetohydrodynamics

Time-resolved cathodoluminescence measurement of the effects of α-particle-related damage on minority hole lifetime in free-standing n-GaN

Highly radiative nature of ultra-thin c-plane Al-rich AlGaN/AlN quantum wells for deep ultraviolet emitters

AlGaN devices and growth of device structures

Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (011̄2) sapphire by metalorganic chemical vapor deposition

Impact of oxygen source parameters on homoepitaxial ZnO films grown at low-temperature on Zn-polar substrates

High quantum efficiency deep ultraviolet 4H-SiC photodetectors

Formalizing chemical physics using the Lean theorem prover

Plasma-assisted molecular beam epitaxy of strain-compensated a-plane InGaN/AlGaN superlattices

Deep ultraviolet enhanced silicon carbide avalanche photodiodes

Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance

First all-HVPE grown InGaN/InGaN MQW LED structures for 460-510 nm

InN layers grown by the HVPE

Semiconductor ultraviolet emitters and detectors with potential for wireless communications

Double heterostructure ultraviolet light emitting diodes with nanometer scale compositionally inhomogeneous active regions

Experimental and Theoretical Studies of Transient Electron Velocity Overshoot in GaN

Time-resolved photoluminescence studies of high-brightness 340-nm LEDs under current injection

Luminescence properties of AlxGa1-xN(0.4 < x < 0.5)/AlyGa1-yN (0.6 < y ≤ 1) quantum structures grown by gas source molecular beam epitaxy

Intensity-dependent photoluminescence studies of the electric field in N-face and In-face InN/InGaN multiple quantum wells

Enhanced THz emission from c -plane In x Ga 1− x N due to piezoelectric field-induced electron transport

Enhanced THz emission from c -plane In x Ga1− x N due to piezoelectric field-induced electron transport

AlGaN/SiC Heterojunction Ultraviolet Photodiodes

Defect density dependence of luminescence efficiency and lifetimes in AlGaN active regions exhibiting enhanced emission from nanoscale compositional inhomogeneities

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