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Comparison of Si and crystal orientation nanowire transistor reliability using Poisson–Schrödinger and classical simulations

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1307-1312

2015

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3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2014, p.21-24

2014

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Monte Carlo analysis of In0.53Ga0.47as Implant-Free Quantum-Well device performance

2010 Silicon Nanoelectronics Workshop, 2010, p.1-2

2010

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Performance of vertically stacked horizontal Si nanowires transistors: A 3D Monte Carlo/2D Poisson Schrodinger simulation study

2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), 2016, p.1-2

2016

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Monte carlo simulation of the effect of interface roughness in Implant-Free Quantum-Well MOSFETs

2013 14th International Conference on Ultimate Integration on Silicon (ULIS), 2013, p.113-116

2013

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Impact of the statistical variability on 15nm III-V and Ge MOSFET based SRAM design

2013 14th International Conference on Ultimate Integration on Silicon (ULIS), 2013, p.133-136

2013

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7 - Silicon-on-insulator (SOI) fin-on-oxide field effect transistors (FinFETs)

Silicon-on-insulator (SOI) Technology, 2014, p.195,203e,203-202,206e,211

2014

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Silicon-on-Insulator (SOI) Fin-on-Oxide Field Effect Transistors (FinFETs)

Silicon-on-Insulator (SOI) Technology - Manufacture and Applications, 2014, p.1-1

2014

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Silicon-on-insulator (SOI) Technology, 2014, p.xi-xiii

2014

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A regioselectively 1,1′,3,3′-tetrazincated ferrocene complex displaying core and peripheral reactivity

Chemical science (Cambridge), 2020-03, Vol.11 (25), p.651-652

2020

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Synthesis, Structure, and DFT Analysis of the THF Solvate of 2‐Picolyllithium: A 2‐Picolyllithium Solvate with Significant Carbanionic Character

Zeitschrift für anorganische und allgemeine Chemie (1950), 2020-07, Vol.646 (13), p.726-733

2020

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Impact of strain on the performance of Si nanowires transistors at the scaling limit: A 3D Monte Carlo/2D poisson schrodinger simulation study

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.213-216

2016

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One-dimensional multi-subband Monte Carlo simulation of charge transport in Si nanowire transistors

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.23-26

2016

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Radiobiological properties of high-energy cyclotron-produced neutrons used for radiotherapy

Radiology, 1975-10, Vol.117 (1), p.173-178

1975

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Comparison of Si and crystal orientation nanowire transistor reliability using Poisson–Schrödinger and classical simulations

3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors

Monte Carlo analysis of In0.53Ga0.47as Implant-Free Quantum-Well device performance

Performance of vertically stacked horizontal Si nanowires transistors: A 3D Monte Carlo/2D Poisson Schrodinger simulation study

Monte carlo simulation of the effect of interface roughness in Implant-Free Quantum-Well MOSFETs

Impact of the statistical variability on 15nm III-V and Ge MOSFET based SRAM design

7 - Silicon-on-insulator (SOI) fin-on-oxide field effect transistors (FinFETs)

Silicon-on-Insulator (SOI) Fin-on-Oxide Field Effect Transistors (FinFETs)

Contributor contact details

A regioselectively 1,1′,3,3′-tetrazincated ferrocene complex displaying core and peripheral reactivity

Synthesis, Structure, and DFT Analysis of the THF Solvate of 2‐Picolyllithium: A 2‐Picolyllithium Solvate with Significant Carbanionic Character

Impact of strain on the performance of Si nanowires transistors at the scaling limit: A 3D Monte Carlo/2D poisson schrodinger simulation study

One-dimensional multi-subband Monte Carlo simulation of charge transport in Si nanowire transistors

Radiobiological properties of high-energy cyclotron-produced neutrons used for radiotherapy

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