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Special size effects in advanced single-gate and multiple-gate SOI transistors

Journal of Telecommunications and Information Technology, 2023-06 (2), p.14-24

2023

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Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

IEEE transactions on nuclear science, 2013-08, Vol.60 (4), p.2583-2589

2013

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Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.682-691

2024

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High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Carrier-Mobility Enhancement via Strain Engineering in Future Thin-Body MOSFETs

IEEE electron device letters, 2012-03, Vol.33 (3), p.318-320

2012

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Transient Radiation Response of Single- and Multiple-Gate FD SOI Transistors

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2355-2362

2007

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Multi-VT UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

IEEE transactions on electron devices, 2011, Vol.58 (8), p.2473-2482

2011

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Impact of back biasing on carrier transport in ultra-thin-body and BOX (UTBB) Fully Depleted SOI MOSFETs

2012 Symposium on VLSI Technology (VLSIT), 2012, p.113-114

2012

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Two-level Stacked Nanowire MOSFETs: A Low Temperature Analysis of the Low-Field Mobility Degradation Factors

Journal of Integrated Circuits and Systems, 2024-08, Vol.19 (2), p.1-5

2024

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Experimental Demonstration of Capacitorless A2RAM Cells on Silicon-on-Insulator

IEEE electron device letters, 2012-12, Vol.33 (12), p.1717-1719

2012

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GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

IEEE electron device letters, 2010-03, Vol.31 (3), p.234-236

2010

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Experimental Assessment of Variability in Junctionless Nanowire nMOS Transistors

ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021, p.223-226

2021

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Foreword

Solid-state electronics, 2011-05, Vol.59 (1), p.1

2011

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Experimental Evaluation of 7-Level Stacked Nanosheet SOI MOSFETs Analog Parameters

2024 IEEE European Solid-State Electronics Research Conference (ESSERC), 2024, p.456-459

2024

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Experimental developments of A2RAM memory cells on SOI and bulk substrates

Solid-state electronics, 2015-01, Vol.103, p.7-14

2015

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Study of silicon n- and p-FET SOI nanowires concerning analog performance down to 100K

Solid-state electronics, 2017-02, Vol.128, p.60-66

2017

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Arsenic-Segregated Rare-Earth Silicide Junctions: Reduction of Schottky Barrier and Integration in Metallic n-MOSFETs on SOI

IEEE electron device letters, 2009-12, Vol.30 (12), p.1266-1268

2009

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Bias-Engineered Mobility in Advanced FD-SOI MOSFETs

IEEE electron device letters, 2013-07, Vol.34 (7), p.840-842

2013

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Performance and Analysis of n-Type Vertically Stacked Nanowires Regarding Harmonic Distortion

Journal of Integrated Circuits and Systems, 2020-08, Vol.15 (2), p.1-5

2020

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Multibranch Mobility Analysis for the Characterization of FDSOI Transistors

IEEE electron device letters, 2012-08, Vol.33 (8), p.1102-1104

2012

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New insight on the geometry dependence of BTI in 3D technologies based on experiments and modeling

2017 Symposium on VLSI Technology, 2017, p.T134-T135

2017

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Papers Selected from the EUROSOI 2010 Conference

Solid-state electronics, 2011, Vol.59 (1)

2011

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Effect of measurement speed (μs-800 ps) on the characterization of reliability behaviors for FDSOI nMOSFETs

2018 IEEE International Reliability Physics Symposium (IRPS), 2018, p.6E.6-1-6E.6-6

2018

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High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: V Tuning, Variability, Access Resistance, and Mobility Issues

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1568-1574

2013

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Analog performance of strained SOI nanowires down to 10K

2016 46th European Solid-State Device Research Conference (ESSDERC), 2016, p.222-225

2016

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Special size effects in advanced single-gate and multiple-gate SOI transistors

Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures

High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs

Carrier-Mobility Enhancement via Strain Engineering in Future Thin-Body MOSFETs

Transient Radiation Response of Single- and Multiple-Gate FD SOI Transistors

Multi-VT UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

Impact of back biasing on carrier transport in ultra-thin-body and BOX (UTBB) Fully Depleted SOI MOSFETs

Two-level Stacked Nanowire MOSFETs: A Low Temperature Analysis of the Low-Field Mobility Degradation Factors

Experimental Demonstration of Capacitorless A2RAM Cells on Silicon-on-Insulator

GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

Experimental Assessment of Variability in Junctionless Nanowire nMOS Transistors

Foreword

Experimental Evaluation of 7-Level Stacked Nanosheet SOI MOSFETs Analog Parameters

Experimental developments of A2RAM memory cells on SOI and bulk substrates

Study of silicon n- and p-FET SOI nanowires concerning analog performance down to 100K

Arsenic-Segregated Rare-Earth Silicide Junctions: Reduction of Schottky Barrier and Integration in Metallic n-MOSFETs on SOI

Bias-Engineered Mobility in Advanced FD-SOI MOSFETs

Performance and Analysis of n-Type Vertically Stacked Nanowires Regarding Harmonic Distortion

Multibranch Mobility Analysis for the Characterization of FDSOI Transistors

New insight on the geometry dependence of BTI in 3D technologies based on experiments and modeling

Papers Selected from the EUROSOI 2010 Conference

Effect of measurement speed (μs-800 ps) on the characterization of reliability behaviors for FDSOI nMOSFETs

High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: V Tuning, Variability, Access Resistance, and Mobility Issues

Analog performance of strained SOI nanowires down to 10K

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