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Investigation of charge carrier mobility in 5,6,11,12-tetraphenylnapthacene (rubrene) and coumarin 6 doped Alq 3 films

Solid state communications, 2007, Vol.142 (4), p.206-211

2007

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Investigation of charge carrier mobility in 5,6,11,12-tetraphenylnapthacene (rubrene) and coumarin 6 doped Alq3 films

Solid state communications, 2007-04, Vol.142 (4), p.206-211

2007

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Preparation and characterization of the ITO surface and the Al/Alq3/ITO heterostructure for OLEDs

Materials science & engineering. B, Solid-state materials for advanced technology, 2007-12, Vol.145 (1-3), p.48-56

2007

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Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates

Microelectronics, 2009-02, Vol.40 (2), p.360-362

2009

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Characterization of Al xGa 1− xN layers grown by molecular beam epitaxy

Physica. B, Condensed matter, 2001, Vol.308, p.93-97

2001

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Preparation and characterization of the ITO surface and the Al/Alq 3/ITO heterostructure for OLEDs

Materials science & engineering. B, Solid-state materials for advanced technology, 2007, Vol.145 (1), p.48-56

2007

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Intersubband absorption at 1.5-3.5 µm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire

Physica status solidi, 2007, Vol.244 (8), p.2892

2007

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Substrate pre-treatment and initial growth: Strategies towards high-quality III-nitride growth on sapphire by molecular beam epitaxy

Thin solid films, 2006-10, Vol.515 (2), p.603-606

2006

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Diffusion of nitrogen in gallium arsenide

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.367-370

2003

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Characterization of AlxGa1−xN layers grown by molecular beam epitaxy

Physica. B, Condensed matter, 2001-12, Vol.308-310, p.93-97

2001

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Characterisation of surface morphological defects in MBE-grown GaN 0.1As 0.9 layers on GaAs

Applied surface science, 2000, Vol.166 (1), p.259-262

2000

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Intersubband energies in Al1−yInyN/Ga1−xInxN heterostructures with lattice constant close to aGaN

Superlattices and microstructures, 2012-07, Vol.52 (1), p.70-77

2012

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Self-diffusion on the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layers

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.685-688

1999

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Study of Alq 3 thermal evaporation rate effects on the OLED

Materials science & engineering. B, Solid-state materials for advanced technology, 2004, Vol.112 (1), p.14-18

2004

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Molecular-beam-epitaxial growth of Ga 1− xIn xSb on GaAs substrates

Journal of crystal growth, 1997, Vol.175, p.883-887

1997

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Molecular Beam Epitaxy Growth and Characterisation of GaAs1-xNxLayers

Materials science forum, 1998-02, Vol.264-268, p.1185-1188

1998

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DC and RF performance of 0.15 µm gate length In0.70Al0.30As/In0.80Ga0.20As HFETs on GaAs substrate

Electronics letters, 1995-07, Vol.31 (15), p.1292-1294

1995

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Molecular beam epitaxy growth and characterization of In xGa 1 − xAs (0.57 ⩽ x ⩽ 1) on GaAs using InAlAs graded buffer

Journal of crystal growth, 1997, Vol.175, p.1016-1021

1997

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Subband transitions in Al x Ga 1− x N /GaN/ Al x Ga 1− x N and Al x Ga 1− x N /InN/ Al x Ga 1− x N single quantum wells

Superlattices and microstructures, 2005, Vol.38 (3), p.161-167

2005

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Optical characterization of MBE-grown GaNAs

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.153-156

1997

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Growth and characterization of GaAs/Si/GaAs heterostructures

Journal of crystal growth, 1995, Vol.150 (1-4), p.696-699

1995

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Determination of In composition in molecular beam epitaxy grown In xGa 1-xAs/GaAs heterostructures

Journal of crystal growth, 1993, Vol.127 (1), p.616-618

1993

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A multiple-state memory cell based on the resonant tunneling diode

IEEE electron device letters, 1988-05, Vol.9 (5), p.200-202

1988

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Large Stark shift of the interband transition in two-step quantum wells

IEEE electron device letters, 1993-06, Vol.14 (6), p.286-288

1993

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Subband transitions in AlxGa1−xN /GaN/ AlxGa1−xN and AlxGa1−xN /InN/ AlxGa1−xN single quantum wells

Superlattices and microstructures, 2005-09, Vol.38 (3), p.161-167

2005

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Investigation of charge carrier mobility in 5,6,11,12-tetraphenylnapthacene (rubrene) and coumarin 6 doped Alq 3 films

Investigation of charge carrier mobility in 5,6,11,12-tetraphenylnapthacene (rubrene) and coumarin 6 doped Alq3 films

Preparation and characterization of the ITO surface and the Al/Alq3/ITO heterostructure for OLEDs

Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates

Characterization of Al xGa 1− xN layers grown by molecular beam epitaxy

Preparation and characterization of the ITO surface and the Al/Alq 3/ITO heterostructure for OLEDs

Intersubband absorption at 1.5-3.5 µm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire

Substrate pre-treatment and initial growth: Strategies towards high-quality III-nitride growth on sapphire by molecular beam epitaxy

Diffusion of nitrogen in gallium arsenide

Characterization of AlxGa1−xN layers grown by molecular beam epitaxy

Characterisation of surface morphological defects in MBE-grown GaN 0.1As 0.9 layers on GaAs

Intersubband energies in Al1−yInyN/Ga1−xInxN heterostructures with lattice constant close to aGaN

Self-diffusion on the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layers

Study of Alq 3 thermal evaporation rate effects on the OLED

Molecular-beam-epitaxial growth of Ga 1− xIn xSb on GaAs substrates

Molecular Beam Epitaxy Growth and Characterisation of GaAs1-xNxLayers

DC and RF performance of 0.15 µm gate length In0.70Al0.30As/In0.80Ga0.20As HFETs on GaAs substrate

Molecular beam epitaxy growth and characterization of In xGa 1 − xAs (0.57 ⩽ x ⩽ 1) on GaAs using InAlAs graded buffer

Subband transitions in Al x Ga 1− x N /GaN/ Al x Ga 1− x N and Al x Ga 1− x N /InN/ Al x Ga 1− x N single quantum wells

Optical characterization of MBE-grown GaNAs

Growth and characterization of GaAs/Si/GaAs heterostructures

Determination of In composition in molecular beam epitaxy grown In xGa 1-xAs/GaAs heterostructures

A multiple-state memory cell based on the resonant tunneling diode

Large Stark shift of the interband transition in two-step quantum wells

Subband transitions in AlxGa1−xN /GaN/ AlxGa1−xN and AlxGa1−xN /InN/ AlxGa1−xN single quantum wells

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