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8×10 Gb/s DWDM transmission over 240 km of standard fiber using a cascade of semiconductor optical amplifiers

IEEE photonics technology letters, 2000-08, Vol.12 (8), p.1082

2000

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Integrated SOA-MZI for pattern-effect-free amplification

Electronics letters, 2005-04, Vol.41 (9), p.549-551

2005

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Preparation of thin CuInS2 films via a two-stage process

Thin solid films, 1982-11, Vol.97 (3), p.237-243

1982

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An integrated 4×4-channel multiwavelength laser on InP

IEEE photonics technology letters, 2003-03, Vol.15 (3), p.368

2003

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High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers

IEEE journal of quantum electronics, 1991-06, Vol.27 (6), p.1426-1439

1991

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IEEE_Xplore

High-performance λ=1.3 μm InGaAsP-InP strained-layer quantum well lasers

Journal of lightwave technology, 1994-01, Vol.12 (1), p.28-37

1994

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Polarization resolved, complete characterization of 1310 nm fiber pigtailed multiple-quantum-well optical amplifiers

Journal of lightwave technology, 1996-06, Vol.14 (6), p.1524-1533

1996

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IEEE_Xplore

An SOA-AWG based 80-Gb/s All-optical Wavelength Converter Chip

2006 European Conference on Optical Communications, 2006, p.1-2

2006

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IEEE_Xplore

Defect chemistry of CuInS 2, investigated by electrical measurements and Mössbauer spectroscopy

The Journal of physics and chemistry of solids, 1983, Vol.44 (3), p.237-244

Binsma, J.J.M.

1983

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High-gain, high-power 1550-nm polarization independent MQW optical amplifier

IEEE photonics technology letters, 1996-09, Vol.8 (9), p.1142-1144

1996

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IEEE_Xplore

Submilliamp threshold current (0.62 mA at 0°C) and high output power (220mW) 1.5 μm tensile strained InGaAs single quantum well lasers

Electronics letters, 1992-04, Vol.28 (9), p.829-830

1992

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Space-switching 2.5 Gbit/s signals using wavelength conversion and phased array routing

Electronics letters, 1996, Vol.32 (4), p.377, Article 377

1996

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Kinetics of Ca 2+ ion exchange and crystal growth of CaF 2 in aqueous solution

Solid state ionics, 1985, Vol.16, p.225-232

1985

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High temperature operation of λ = 1.5 μm tensile strained multiple quantum well sipbh lasers

Electronics letters, 1991-05, Vol.27 (10), p.791-793

1991

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Packaged, integrated DBF/EA-MOD for repeaterless transmission of 10 Gbit/s over 107 km standard fibre

Electronics letters, 1993, Vol.29 (21), p.1876-1878

1993

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Defect chemistry of CuInS2, investigated by electrical measurements and Mössbauer spectroscopy

The Journal of physics and chemistry of solids, 1983-01, Vol.44 (3), p.237-244

Binsma, J.J.M.

1983

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Monolithically integrated tunable optical filter, amplifier and detector for HDWDM applications

Electronics letters, 1996-03, Vol.32 (6), p.586

1996

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The formation of orthorhombic BaF 2 by precipitation from aqueous solutions and its transformation into cubic BaF 2

Journal of crystal growth, 1986, Vol.76 (2), p.408-412

1986

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Precipitation of barium flouride microcrystals from electrolytic solutions: The influence of the composition of the precipitating solutions

Journal of crystal growth, 1984, Vol.66 (1), p.179-188

1984

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CVT growth of CuInS 2; Characterization of growth spirals on CuInS 2 formed by vapour-solid growth

Journal of crystal growth, 1983, Vol.61 (1), p.157-162

1983

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CVT growth of CuInS 2 and CuGaS 2 assisted by VLS mechanisms

Journal of crystal growth, 1983, Vol.61 (1), p.138-156

1983

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Preparation of thin CuInS 2 films via a two-stage process

Thin solid films, 1982, Vol.97 (3), p.237-243

1982

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Luminescence of CuInS2

Journal of luminescence, 1982-06, Vol.27 (1), p.55-72

1982

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Luminescence of CuInS2

Journal of luminescence, 1982-06, Vol.27 (1), p.35-53

1982

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Luminescence of CuInS 2: I. The broad band emission and its dependence on the defect chemistry

Journal of luminescence, 1982, Vol.27 (1), p.35-53

1982

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8×10 Gb/s DWDM transmission over 240 km of standard fiber using a cascade of semiconductor optical amplifiers

Integrated SOA-MZI for pattern-effect-free amplification

Preparation of thin CuInS2 films via a two-stage process

An integrated 4×4-channel multiwavelength laser on InP

High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers

High-performance λ=1.3 μm InGaAsP-InP strained-layer quantum well lasers

Polarization resolved, complete characterization of 1310 nm fiber pigtailed multiple-quantum-well optical amplifiers

An SOA-AWG based 80-Gb/s All-optical Wavelength Converter Chip

Defect chemistry of CuInS 2, investigated by electrical measurements and Mössbauer spectroscopy

High-gain, high-power 1550-nm polarization independent MQW optical amplifier

Submilliamp threshold current (0.62 mA at 0°C) and high output power (220mW) 1.5 μm tensile strained InGaAs single quantum well lasers

Space-switching 2.5 Gbit/s signals using wavelength conversion and phased array routing

Kinetics of Ca 2+ ion exchange and crystal growth of CaF 2 in aqueous solution

High temperature operation of λ = 1.5 μm tensile strained multiple quantum well sipbh lasers

Packaged, integrated DBF/EA-MOD for repeaterless transmission of 10 Gbit/s over 107 km standard fibre

Defect chemistry of CuInS2, investigated by electrical measurements and Mössbauer spectroscopy

Monolithically integrated tunable optical filter, amplifier and detector for HDWDM applications

The formation of orthorhombic BaF 2 by precipitation from aqueous solutions and its transformation into cubic BaF 2

Precipitation of barium flouride microcrystals from electrolytic solutions: The influence of the composition of the precipitating solutions

CVT growth of CuInS 2; Characterization of growth spirals on CuInS 2 formed by vapour-solid growth

CVT growth of CuInS 2 and CuGaS 2 assisted by VLS mechanisms

Preparation of thin CuInS 2 films via a two-stage process

Luminescence of CuInS2

Luminescence of CuInS2

Luminescence of CuInS 2: I. The broad band emission and its dependence on the defect chemistry

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