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Analysis of the feasibility of CF 3I/CO2 used in C-GIS by partial discharge inception voltages in positive half cycle and breakdown voltages

IEEE transactions on dielectrics and electrical insulation, 2015-12, Vol.22 (6), p.3234

2015

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Mechanical and dielectric properties of epoxyaclay nanocomposites

Journal of materials science, 2014-02, Vol.49 (4), p.1574-1584

2014

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High-breakdown voltage and low on-resistance AlGaN/GaN on Si MOS-HEMTs employing an extended TaN gate on HfO sub( 2) gate insulator

Electronics letters, 2013-03, Vol.49 (6), p.1-1

2013

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New Breakdown Diagnosis Method based on Electrical Measurement and Deep Learning Recognition for Multiple Electrodes in Vacuum

IEEE transactions on dielectrics and electrical insulation, 2024, p.1-1

2024

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IEEE_Xplore

Dielectric behavior and energy storage properties in BaO-SrO-Nb sub(2)O sub(5)-B sub(2)O sub(3) system glass-ceramics with Gd sub(2)O sub(3) addition

Journal of materials science. Materials in electronics, 2014-01, Vol.25 (1), p.349-354

2014

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Pre-breakdown Evolution of Field Emission Induced Breakdown under Impulse Voltage

IEEE transactions on dielectrics and electrical insulation, 2023-09, p.1-1

2023

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IEEE_Xplore

RDELAaa Delaunay-triangulation-based, location and covariance estimator with high breakdown point

Statistics and computing, 2013-11, Vol.23 (6), p.677-688

2013

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Real-time production scheduling in the Industry-4.0 context: Addressing uncertainties in job arrivals and machine breakdowns

Computers & operations research, 2020-11, Vol.123, p.105031, Article 105031

2020

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Robust and stable flexible job shop scheduling with random machine breakdowns using a hybrid genetic algorithm

International journal of production economics, 2011-08, Vol.132 (2), p.279-291

2011

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Erratum: “Dielectric breakdown at sub-critical fields” [Appl. Phys. Lett. 113, 112901 (2018)]

Applied physics letters, 2019-10, Vol.115 (17)

2019

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Distribution Capacitor Health Monitoring Based on the Disturbances of Element Breakdown Faults

IEEE transactions on power delivery, 2022-10, Vol.37 (5), p.4064-4072

2022

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IEEE_Xplore

Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage

IEEE electron device letters, 2020-06, Vol.41 (6), p.836-839

2020

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IEEE_Xplore

A multi objective optimization approach for flexible job shop scheduling problem under random machine breakdown by evolutionary algorithms

Computers & operations research, 2016-09, Vol.73, p.56-66

2016

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Unveiling the Vulnerability of Oxide-Breakdown-Based PUF

IEEE electron device letters, 2024-05, Vol.45 (5), p.750-753

2024

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IEEE_Xplore

1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs

IEEE electron device letters, 2018-09, Vol.39 (9), p.1385-1388

2018

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IEEE_Xplore

A Comprehensive Time-Dependent Dielectric Breakdown Lifetime Simulator for Both Traditional CMOS and FinFET Technology

IEEE transactions on very large scale integration (VLSI) systems, 2018-11, Vol.26 (11), p.2470-2482

2018

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IEEE_Xplore

Statistical investigation of AC breakdown voltage of nanofluids compared with mineral and natural ester oil

IET science, measurement & technology, 2016-09, Vol.10 (6), p.644-652

2016

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Heavy-Ion Radiation Effects in AlGaN/GaN High-Electron-Mobility Transistors

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.902-911

2024

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IEEE_Xplore

Robust scheduling for multi-objective flexible job-shop problems with random machine breakdowns

International journal of production economics, 2013-01, Vol.141 (1), p.112-126

2013

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Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

IEEE electron device letters, 2015-10, Vol.36 (10), p.1001-1003

2015

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IEEE_Xplore

Beveled Fluoride Plasma Treatment for Vertical \beta -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage

IEEE electron device letters, 2020-03, Vol.41 (3), p.441-444

2020

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IEEE_Xplore

Optimization of Experimental Designs for System- Level Accelerated Life Test in a Memory System Degraded by Time-Dependent Dielectric Breakdown

IEEE transactions on very large scale integration (VLSI) systems, 2019-07, Vol.27 (7), p.1640-1651

2019

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IEEE_Xplore

Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode

IEEE electron device letters, 2019-11, Vol.40 (11), p.1744-1747

2019

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IEEE_Xplore

Perovskite lead-free dielectrics for energy storage applications

Progress in materials science, 2019-05, Vol.102, p.72

2019

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Ultrahigh energy storage density in (Bi0.5Na0.5)0.65Sr0.35TiO3-based lead-free relaxor ceramics with excellent temperature stability

Nano energy, 2022-07, Vol.98, p.107276, Article 107276

2022

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