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Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

IEEE electron device letters, 2014-03, Vol.35 (3), p.327-329

2014

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Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs

IEEE electron device letters, 2014-01, Vol.35 (1), p.27-29

2014

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Recent Developments in Landfilling and Biodegradable Waste Management: A Case Study from the Czech Republic

Acta technologica agriculturae, 2024-09, Vol.27 (3), p.142-149

2024

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Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal–insulator–semiconductor field-effect transistors and high-electron-mobility transistors

IET power electronics, 2015-12, Vol.8 (12), p.2322-2328

2015

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Modelling 2DEG charges in AlGaN/GaN heterostructures

CAS 2012 (International Semiconductor Conference), 2012, Vol.2, p.363-366

2012

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Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN x Deposition

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4044-4049

2017

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A 65 nm CMOS 30 dBm Class-E RF Power Amplifier With 60% PAE and 40% PAE at 16 dB Back-Off

IEEE journal of solid-state circuits, 2009-05, Vol.44 (5), p.1372-1379

2009

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The effect of the surface fixed charge and donor traps on the C(V) and transfer characteristics of a GaN MISFET - Experiment and TCAD simulations

2014 44th European Solid State Device Research Conference (ESSDERC), 2014, p.329-332

2014

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Reverse-biased induced mechanical stress in AlGaN/GaN power diodes

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.103-106

2016

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A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz

2011 IEEE International Solid-State Circuits Conference, 2011, p.58-60

2011

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Scalable CMOS power devices with 70% PAE and 1, 2 and 3.4 Watt output power at 2GHz

2009 IEEE Radio Frequency Integrated Circuits Symposium, 2009, p.233-236

2009

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The dynamics of surface donor traps in AlGaN/GaN MISFETs using transient measurements and TCAD modelling

2014 IEEE International Electron Devices Meeting, 2014, p.17.1.1-17.1.4

2014

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Novel 5V-EDMOS transistor with a record /max of 450 GHz in a baseline 40nm CMOS technology

2017 IEEE International Electron Devices Meeting (IEDM), 2017, p.25.5.1-25.5.4

2017

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Diminished electron cloud broadening in a silicon drift detector by sawtooth p(+) strips

IEEE transactions on nuclear science, 1999-02, Vol.46 (1), p.53-58

1999

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Smart Power Devices Nanotechnology

Nanoelectronics, 2017, p.163-204

2017

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The Versatile use of SiGe for High-performance Devices

Meeting abstracts (Electrochemical Society), 2008-08, Vol.MA2008-02 (37), p.2424-2424

2008

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The clinical value of circulating free tumor DNA in testicular germ cell tumor patients

Urologic oncology, 2022-09, Vol.40 (9), p.412.e15-412.e24

2022

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Spatial Dynamics of Coherent Structures in a Thermal Plasma Jet: Images in Plasma Science

IEEE transactions on plasma science, 2008, Vol.36 (4), p.1066-1067

2008

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Spatial Dynamics of Oscillations in a Thermal Plasma Jet

2007 IEEE 34th International Conference on Plasma Science (ICOPS), 2007, p.450-450

2007

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Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs

Recent Developments in Landfilling and Biodegradable Waste Management: A Case Study from the Czech Republic

Modelling 2DEG charges in AlGaN/GaN heterostructures

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN x Deposition

A 65 nm CMOS 30 dBm Class-E RF Power Amplifier With 60% PAE and 40% PAE at 16 dB Back-Off

The effect of the surface fixed charge and donor traps on the C(V) and transfer characteristics of a GaN MISFET - Experiment and TCAD simulations

Reverse-biased induced mechanical stress in AlGaN/GaN power diodes

A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz

Scalable CMOS power devices with 70% PAE and 1, 2 and 3.4 Watt output power at 2GHz

The dynamics of surface donor traps in AlGaN/GaN MISFETs using transient measurements and TCAD modelling

Novel 5V-EDMOS transistor with a record /max of 450 GHz in a baseline 40nm CMOS technology

Diminished electron cloud broadening in a silicon drift detector by sawtooth p(+) strips

Smart Power Devices Nanotechnology

The Versatile use of SiGe for High-performance Devices

The clinical value of circulating free tumor DNA in testicular germ cell tumor patients

Spatial Dynamics of Coherent Structures in a Thermal Plasma Jet: Images in Plasma Science

Spatial Dynamics of Oscillations in a Thermal Plasma Jet

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